2010 - lnk306pn
Abstract: RF1141 diode BY 226 lnk306 LNK306PN ROHS MFR-25FBF-10K7 Renco RL-8064-3 DER-226 RL-8064-3 EKMG201ELL100MJ16S
Text: Department Document Number DER- 226 Date February 16, 2010 Revision 1.0 Summary and , Jose, CA 95138 USA. Tel: +1 408 414 9200 Fax: +1 408 414 9201 www.powerint.com DER- 226 5 V, 12 V , 9200 Fax: +1 408 414 9201 www.powerint.com Page 2 of 24 16-Feb-10 DER- 226 5 V, 12 V Cooktop , Power Integrations Tel: +1 408 414 9200 Fax: +1 408 414 9201 www.powerint.com DER- 226 5 V, 12 V , : +1 408 414 9201 www.powerint.com 0 105 o C Page 4 of 24 16-Feb-10 DER- 226 5 V
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LNK306PN
DER-226
lnk306pn
RF1141
diode BY 226
lnk306
LNK306PN ROHS
MFR-25FBF-10K7
Renco RL-8064-3
DER-226
RL-8064-3
EKMG201ELL100MJ16S
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diode BY 226
Abstract: DIODE RING QUAD
Text: PARASITICS FOR BROAD BAND DESIGNS Single Barrier Ring Quads Each Schottky barrier diode quad consists of , individual diode is in beam-lead form. The beam-lead construction assures minimum junction capacitance , The cross-over quad is a single barrrier ring quad where the leads are crossed-over within the diode package. The diodes used are four closely matched medium barrier Schottky diode chips. M/A-COM , available in five case styles which are compatible with microstrip assembly techniques. The 226 case style
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MA40430
Abstract: MA40483 Semiconductor ring structure MA40440 diode ring mixer MA40285
Text: PARASITICS FOR BROAD BAND DESIGNS Single Barrier Ring Quads Each Schottky barrier diode quad consists of , individual diode is in beam-lead form. The beam-lead construction assures minimum junction capacitance , The cross-over quad is a single barrrier ring quad where the leads are crossed-over within the diode package. The diodes used are four closely matched medium barrier Schottky diode chips. M/A-COM , available in five case styles which are compatible with microstrip assembly techniques. The 226 case style
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2008 - diode BY 226
Abstract: diode marking 226
Text: Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 4 QW-R502- 226 .A UT3418 Power MOSFET , Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/μs Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 15 V m⦠A 226 39 29 270 pF pF pF 2.6 3.2 14.5 2.1 3 1.4 0.55 4 5 22
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UT3418
UT3418
UT3418L
UT3418-AE3-R
UT3418L-AE3-R
OT-23
QW-R502-226
diode BY 226
diode marking 226
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2009 - diode marking 226
Abstract: diode BY 226 all diodes ratings UT3418L UT3418
Text: QW-R502- 226 .B UT3418 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°, unless otherwise specified , Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/s Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 15 V m A 226 39 29 270 pF pF pF 2.6 3.2 14.5 2.1 3 1.4 0.55
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UT3418
UT3418
UT3418L
UT3418G
UT3418-AE3-R
UT3418L-AE3-R
UT3418G-AE3-R
QW-R502-226
diode marking 226
diode BY 226
all diodes ratings
UT3418L
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MA40435
Abstract: MA40446 diode BY 226
Text: BROAD BAND DESIGNS Single Barrier Ring Quads Each S chottky barrier diode quad consists of fou r , individual diode is in beam -lead form . The beam-lead construction assures m inim um junctio n capacitance , ith m icrostrip assem bly techniques. The 226 case style is herm etically sealed and should be used in , close to the physical size of the 226 case style. The sm aller case style, 227, is physically sm aller , Quads MA40430 MA40431 MA40432 MA40439 MA40433 MA40434 MA40437 MA40435 MA40436 MA40438 MA40284 226 227
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MA40483
Abstract: A4049 A beam lead ring quad of four Schottky diodes
Text: Styles Description Single Barrier Ring Quads Each Schottky barrier diode quad consists of four , stripline case styles which are compatible with microstrip assembly techniques. The 226 case style is her , 228 case style is a low-cost package of similar size to the 226 case style. Case style 227 is , current in mA. 4. All of these parts are available in case styles 226 , 227, 228, 264, 963 and 1008. To , = 0V and f = 1 MHz. Cj is comprised of fhe capacitance of two diode junctions in series. 2. Rs is
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2009 - Not Available
Abstract: No abstract text available
Text: Unisonic Technologies Co., Ltd 1 of 3 QW-R502- 226 .D UT3418 Ì Power MOSFET ABSOLU T E M AX I , nA 1.4 43 52 101 1.8 60 70 155 V m m m A 226 39 29 270 pF pF pF , QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/ s Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN
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UT3418
UT3418
UT3418L-AE3-R
UT3418G-AE3-R
QW-R502-226
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si1420
Abstract: 40446
Text: sty les w hich are co m p atib le with m icrostrip asse m b ly tech n iqu es. T h e 226 c a se style , 226 c a se style. C a se style 227 is su g g e ste d for eith er high freq u en cy or w id e ban dw , is the forward current in mA. All of these parts are available in case styles 226 , 227, 228, 264, 963 , VR = OV and f = 1 MHz. Cj is comprised of the capacitance of two diode junctions in series. 2. R s is the diode series resistance which is the dynamic resistance, RT, minus the junction resistance, Rj
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2015 - Not Available
Abstract: No abstract text available
Text: www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R502- 226 .E UT3418 ï® Power , 101 1.8 60 70 155 V m⦠m⦠m⦠A 226 39 29 270 pF pF pF 2.6 3.2 , DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/μs Body Diode Reverse , of 3 QW-R502- 226 .E UT3418 ï® Power MOSFET TYPICAL CHARACTERISTICS 300 Drain Current
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UT3418
UT3418
UT3418G-AE3-R
OT-23
QW-R502-226
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2009 - diode marking 226
Abstract: diode BY 226
Text: Technologies Co., Ltd 1 of 3 QW-R502- 226 .D UT3418 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25 , UNIT 1 100 V µA nA 1.4 43 52 101 1.8 60 70 155 V m m m A 226 39 29 , Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/s Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD
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UT3418
UT3418
UT3418L-AE3-R
UT3418G-AE3-R
OT-23
QW-R502-226
diode marking 226
diode BY 226
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toyota Speed Sensor
Abstract: igbt sinewave inverter three phase bridge inverter in 180 degree and 120 squirrel cage induction generator
Text: qualified IGBT, Diode components, modules ⢠Influence over IGBT, module roadmap ⢠Ability to , 210 0.77 226 0.87 239 0.94 248 0.98 254 1.00 256 0.98 254 0.94 248 0.87 239 0.77 226 , 1.571 1.745 1.920 2.094 sin scaled 255 0.87 239 0.77 226 0.64 210 0.50 192 0.34 172 , 106 0.00 128 0.17 150 0.34 172 0.50 192 0.64 210 0.77 226 0.87 239 0.94 248 0.98 254 , 172 0.50 192 0.64 210 0.77 226 0.87 239 0.94 248 0.98 254 1.00 256 0.98 254 0.94 248
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140HP
110VAC
toyota Speed Sensor
igbt sinewave inverter
three phase bridge inverter in 180 degree and 120
squirrel cage induction generator
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Not Available
Abstract: No abstract text available
Text: Designs MA4E400 Series V3.00 Case Styles Description Each Schottky barrier diode quad consists , that each individual diode is in beam lead form. The beam lead construction assures minimum junction , style. The available packages are 226 , 227, 228 or 963. To order a beam lead part add "-906". Notes , . High speed switching, a necessary sampling requirement, is accom plished with the Schottky diode , enable the designer to select a diode with an appropriate barrier such that the RF sig nal input to the
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MA4E400
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Not Available
Abstract: No abstract text available
Text: · · · MA4E400 Series V3.00 Case Styles Description Each Schottky barrier diode quad , each individual diode is in beam lead form. The beam lead construction assures minimum junction , a low barrier bridge quad housed in the 228 case style. The available packages are 226 , 227, 228 or , Package -6 5 °C to + 1 50 °C (Case Style 226 ) Beam Strength 2g (Case Style 906) 75 mW / junction Absolute , Schottky diode . Schottky diodes have switching sp eeds in the picosecond range. The four closely m atched
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MA4E400
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RXMVB 2
Abstract: rxmvb abb 1MRK 251 270 ohm resistor 015-UEN RK 251 204 RXMVB4 595-AD 016-BEN bistable impulse relay
Text: for any other use. To protect electronic circuits against transients a diode unit across the coils of the dc relay can be used. For RXMVB 2 the diode is connected to 111(+) - 121(-) and 221(+) - 211(- , 116 118 124 214 228 226 224 213 227 225 223 RK 251 206-. + 122 214 228 226 224 , 118 222 224 226 228 113 115 117 221 223 225 227 318 316 314 312 428 426 424 317 315 313 311 427 425 423 RK 251 403-. + 121 212 114 116 118 222 224 226 228
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016-BEN
SE970872)
SE970878)
086-A
0086-B
0086-C
268-C
001-BEN
015-UEN
SE-721
RXMVB 2
rxmvb
abb 1MRK 251
270 ohm resistor
015-UEN
RK 251 204
RXMVB4
595-AD
016-BEN
bistable impulse relay
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226 e diode
Abstract: No abstract text available
Text: IGBT4 Modules SKM 50GB12T4 Inverse Diode E E=+ E,+ 26 7 <3 7 '6 63 :63 2'6 233 F3 G:;6 , typ. 6&< 3&< 3&; 2: >: :&<6 2&26 >&' 3&2 3&:< 2<3 max. '&6 3&@ 3&< 2> >> 2&36 2&6 Units H , © by SEMIKRON SKM 50GB12T4 Characteristics Symbol Conditions Inverse Diode E E3 E =+ I =8F , $ 8 :63 7$ 8 26 7 8 :63 7 8 26 7 8 :63 7 8 :63 7 >&< 3&< min. typ. 2&26 2&2 , IGBT4 Modules SKM 50GB12T4 ® Freewheeling Diode E3 E =+ I // Target Data Features
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50GB12T4
226 e diode
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1997 - SE1470
Abstract: SD1410 SD1420 SD1440
Text: 17 September 1997 SE1470 AlGaAs Infrared Emitting Diode FEATURES · Compact metal can , -63.TIF DESCRIPTION The SE1470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a , plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) SE1470-XXX .091( 2.26 ) CATHODE (CASE , ) DIA .122(3.10) .106(2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1470-XXXL .091( 2.26 ) .020 , Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM
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SE1470
SD1420
SD1440
SD1410
INFRA-63
SE1470
SE1470-XXXL)
SD1420
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1997 - GaAs 1000 nm Infrared Emitting Diode
Abstract: SD1410 SD1420 SD1440 SE1450
Text: 17 September 1997 SE1450 GaAs Infrared Emitting Diode FEATURES · Compact, metal can coaxial , photodarlington INFRA-63.TIF DESCRIPTION The SE1450 is a gallium arsenide infrared emitting diode mounted , decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) SE1450-XXX .091( 2.26 ) CATHODE (CASE) ANODE , .122(3.10) .106(2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1450-XXXL .091( 2.26 ) .020 (0.51 , Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM
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SE1450
SD1420
SD1440
SD1410
INFRA-63
SE1450
SE1450-XXXL)
GaAs 1000 nm Infrared Emitting Diode
SD1420
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2011 - CPW4-1200S010B
Abstract: Cree SiC diode die diode marking 226
Text: CPW4-1200S010BSilicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 1200 V IF(AVG)= 10 A Features · · · · · · · Qc Chip Outline = 66 nC 1200-Volt Schottky , Size 2.26 x 2.26 mm Anode Pad Size 1.98 x 1.98 mm Anode Pad Opening 1.70 x 1.70 , Polyimide Note Chip Dimensions B symbol dimension mm C A A inch 2.26 0.089 B 2.26 0.089 C 1.70 0.067 D 1.70 0.067 D Part Number Anode
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CPW4-1200S010B
1200-Volt
CPW4-1200S010B
W4-1200S010
CPW4-1200S010
Cree SiC diode die
diode marking 226
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1997 - SE1470
Abstract: SD1410 SD1420 SD1440 SE1470-XXX
Text: SE1470 AlGaAs Infrared Emitting Diode FEATURES · Compact metal can coaxial package · 24 , a high intensity aluminum gallium arsenide infrared emitting diode mounted in a glass lensed metal , ) 2 plc decimals ±0.020(0.51) SE1470-XXX .091( 2.26 ) CATHODE (CASE) ANODE .020(0.51) DIA , (2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1470-XXXL .091( 2.26 ) .020 (0.51) DIA CATHODE , possible. SE1470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL
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SE1470
SD1420
SD1440
SD1410
INFRA-63
SE1470
SE1470-XXXL)
SD1420
SE1470-XXX
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1997 - GaAs 1000 nm Infrared Diode,
Abstract: SD1410 SD1420 SD1440 SE1450
Text: SE1450 GaAs Infrared Emitting Diode FEATURES · Compact, metal can coaxial package · 24 , INFRA-63.TIF DESCRIPTION The SE1450 is a gallium arsenide infrared emitting diode mounted in a , (0.12) 2 plc decimals ±0.020(0.51) SE1450-XXX .091( 2.26 ) CATHODE (CASE) ANODE .020(0.51 , ) .106(2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1450-XXXL .091( 2.26 ) .020 (0.51) DIA CATHODE , possible. SE1450 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL
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SE1450
SD1420
SD1440
SD1410
INFRA-63
SE1450
SE1450-XXXL)
GaAs 1000 nm Infrared Diode,
SD1420
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transformer from 230V AC to 5V DC
Abstract: 230V AC to 5V DC ic pj 53 diode 226 capacitor 230V AC to 5V DC using ic 230v dc 5a diode bridge 400V INDUSTRIAL voltage regulator dc capacitor 400v LB Nichicon BP5040
Text: voltage range ( 226 to 358V DC for DC voltage conversion, 160 to 253V for AC voltage conversion) 3) DC , Parameter Symbol Min. Typ. Max. Unit Power supply voltage Vcc 226 282 358 V (dc) 4) Since no transformer , voltage Vi 226 282 358 V DC Output voltage Vo 4.7 5 5.3 V Vi=282V, lo=50mA Output current lo 0 - 100 mA , vacuum cleaner The diode bridge is used to extract zero cross signals. Consequently, if zero cross signals are not required, no diode bridge is required. â¦Selecting attached components (1) Diodes The
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BP5040
BP5040
100mA
transformer from 230V AC to 5V DC
230V AC to 5V DC ic
pj 53 diode
226 capacitor
230V AC to 5V DC using ic
230v dc 5a diode bridge
400V INDUSTRIAL voltage regulator
dc capacitor 400v
LB Nichicon
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ac and dc circuit diagram
Abstract: A 4661 tag 8630 97-series relay diode a1 86-308-2 diode a1 7 20 SP varistor
Text: (according to type): 99.02 coil indication and EMC suppression modules for 97.01 and 97.02 Diode (+A1 , LED + Diode (+A1, standard polarity) (6.24)V DC LED + Diode (+A1, standard polarity) (28.60)V DC LED + Diode (+A1, standard polarity) (110.220)V DC LED + Varistor (6.24)V DC/AC LED + , 30.6 COM 30.3 4 11 A 2 8 COIL 1 A 1 22.6 97.51 97.51 32.5 97.52 97.52 , indication and EMC suppression modules for 97.51 and 97.52 Diode (+A1, standard polarity) (6.220)V DC
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25bient
ac and dc circuit diagram
A 4661
tag 8630
97-series relay
diode a1
86-308-2
diode a1 7
20 SP varistor
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2008 - Not Available
Abstract: No abstract text available
Text: switch No feedback resistors ISET open/short protection Open diode /secondary winding protection 3 mm , voltage on the primary side and it eliminates the external feedback resistors. If the output diode or , A8724 ELECTRICAL CHARACTERISTICS Valid at VIN = VBAT = 3.6 V, RSET = 22.6 kΩ, TA = 25°C except , = VBAT = 3.6 V, RSET = 22.6 kΩ, TA = 25°C except indicates specifications guaranteed from â , 3.6 V, COUT = 100 μF, RISET = 22.6 kΩ, , TA â 25°C 10 ILIM Step ILIM (A) 8 8
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A8724
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86.10.0.024.0000
Abstract: Tag 8610 diode A1 99.02.0024.59 99.02.0.230.59 097.01
Text: data pages 247/248 Diode (+A1, standard polarity) (6.220)V DC LED (6.24)V DC/AC LED (28.60)V DC/AC LED (110.240)V DC/AC LED + Diode (+A1, standard polarity) (6.24)V DC LED + Diode (+A1, standard polarity) (28.60)V DC LED + Diode (+A1, standard polarity) (110.220)V DC LED + , sockets mm2 AWG 97.52 15.8 22.6 15.8 97.51 86 series timer modules (see technical data , technical data pages 247/248 Diode (+A1, standard polarity) (6.220)V DC LED (6.24)V DC/AC LED
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