Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    diode 226 Datasheets

    Top Results (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ6V2 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CEZ6V2 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    diode 226 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2010 - lnk306pn

    Abstract: RF1141 diode BY 226 lnk306 LNK306PN ROHS MFR-25FBF-10K7 Renco RL-8064-3 DER-226 RL-8064-3 EKMG201ELL100MJ16S
    Text: Department Document Number DER- 226 Date February 16, 2010 Revision 1.0 Summary and , Jose, CA 95138 USA. Tel: +1 408 414 9200 Fax: +1 408 414 9201 www.powerint.com DER- 226 5 V, 12 V , 9200 Fax: +1 408 414 9201 www.powerint.com Page 2 of 24 16-Feb-10 DER- 226 5 V, 12 V Cooktop , Power Integrations Tel: +1 408 414 9200 Fax: +1 408 414 9201 www.powerint.com DER- 226 5 V, 12 V , : +1 408 414 9201 www.powerint.com 0 105 o C Page 4 of 24 16-Feb-10 DER- 226 5 V


    Original
    PDF LNK306PN DER-226 lnk306pn RF1141 diode BY 226 lnk306 LNK306PN ROHS MFR-25FBF-10K7 Renco RL-8064-3 DER-226 RL-8064-3 EKMG201ELL100MJ16S

    diode BY 226

    Abstract: DIODE RING QUAD
    Text: PARASITICS FOR BROAD BAND DESIGNS Single Barrier Ring Quads Each Schottky barrier diode quad consists of , individual diode is in beam-lead form. The beam-lead construction assures minimum junction capacitance , The cross-over quad is a single barrrier ring quad where the leads are crossed-over within the diode package. The diodes used are four closely matched medium barrier Schottky diode chips. M/A-COM , available in five case styles which are compatible with microstrip assembly techniques. The 226 case style


    OCR Scan
    PDF

    MA40430

    Abstract: MA40483 Semiconductor ring structure MA40440 diode ring mixer MA40285
    Text: PARASITICS FOR BROAD BAND DESIGNS Single Barrier Ring Quads Each Schottky barrier diode quad consists of , individual diode is in beam-lead form. The beam-lead construction assures minimum junction capacitance , The cross-over quad is a single barrrier ring quad where the leads are crossed-over within the diode package. The diodes used are four closely matched medium barrier Schottky diode chips. M/A-COM , available in five case styles which are compatible with microstrip assembly techniques. The 226 case style


    OCR Scan
    PDF

    2008 - diode BY 226

    Abstract: diode marking 226
    Text: Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 4 QW-R502- 226 .A UT3418 Power MOSFET , Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/μs Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 15 V mΩ A 226 39 29 270 pF pF pF 2.6 3.2 14.5 2.1 3 1.4 0.55 4 5 22


    Original
    PDF UT3418 UT3418 UT3418L UT3418-AE3-R UT3418L-AE3-R OT-23 QW-R502-226 diode BY 226 diode marking 226

    2009 - diode marking 226

    Abstract: diode BY 226 all diodes ratings UT3418L UT3418
    Text: QW-R502- 226 .B UT3418 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°, unless otherwise specified , Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/s Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 15 V m A 226 39 29 270 pF pF pF 2.6 3.2 14.5 2.1 3 1.4 0.55


    Original
    PDF UT3418 UT3418 UT3418L UT3418G UT3418-AE3-R UT3418L-AE3-R UT3418G-AE3-R QW-R502-226 diode marking 226 diode BY 226 all diodes ratings UT3418L

    MA40435

    Abstract: MA40446 diode BY 226
    Text: BROAD BAND DESIGNS Single Barrier Ring Quads Each S chottky barrier diode quad consists of fou r , individual diode is in beam -lead form . The beam-lead construction assures m inim um junctio n capacitance , ith m icrostrip assem bly techniques. The 226 case style is herm etically sealed and should be used in , close to the physical size of the 226 case style. The sm aller case style, 227, is physically sm aller , Quads MA40430 MA40431 MA40432 MA40439 MA40433 MA40434 MA40437 MA40435 MA40436 MA40438 MA40284 226 227


    OCR Scan
    PDF

    MA40483

    Abstract: A4049 A beam lead ring quad of four Schottky diodes
    Text: Styles Description Single Barrier Ring Quads Each Schottky barrier diode quad consists of four , stripline case styles which are compatible with microstrip assembly techniques. The 226 case style is her , 228 case style is a low-cost package of similar size to the 226 case style. Case style 227 is , current in mA. 4. All of these parts are available in case styles 226 , 227, 228, 264, 963 and 1008. To , = 0V and f = 1 MHz. Cj is comprised of fhe capacitance of two diode junctions in series. 2. Rs is


    OCR Scan
    PDF

    2009 - Not Available

    Abstract: No abstract text available
    Text: Unisonic Technologies Co., Ltd 1 of 3 QW-R502- 226 .D UT3418 ̈ Power MOSFET ABSOLU T E M AX I , nA 1.4 43 52 101 1.8 60 70 155 V m m m A 226 39 29 270 pF pF pF , QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/ s Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN


    Original
    PDF UT3418 UT3418 UT3418L-AE3-R UT3418G-AE3-R QW-R502-226

    si1420

    Abstract: 40446
    Text: sty les w hich are co m p atib le with m icrostrip asse m b ly tech n iqu es. T h e 226 c a se style , 226 c a se style. C a se style 227 is su g g e ste d for eith er high freq u en cy or w id e ban dw , is the forward current in mA. All of these parts are available in case styles 226 , 227, 228, 264, 963 , VR = OV and f = 1 MHz. Cj is comprised of the capacitance of two diode junctions in series. 2. R s is the diode series resistance which is the dynamic resistance, RT, minus the junction resistance, Rj


    OCR Scan
    PDF

    2015 - Not Available

    Abstract: No abstract text available
    Text: www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R502- 226 .E UT3418  Power , 101 1.8 60 70 155 V mΩ mΩ mΩ A 226 39 29 270 pF pF pF 2.6 3.2 , DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/μs Body Diode Reverse , of 3 QW-R502- 226 .E UT3418  Power MOSFET TYPICAL CHARACTERISTICS 300 Drain Current


    Original
    PDF UT3418 UT3418 UT3418G-AE3-R OT-23 QW-R502-226

    2009 - diode marking 226

    Abstract: diode BY 226
    Text: Technologies Co., Ltd 1 of 3 QW-R502- 226 .D UT3418 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25 , UNIT 1 100 V µA nA 1.4 43 52 101 1.8 60 70 155 V m m m A 226 39 29 , Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/s Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD


    Original
    PDF UT3418 UT3418 UT3418L-AE3-R UT3418G-AE3-R OT-23 QW-R502-226 diode marking 226 diode BY 226

    toyota Speed Sensor

    Abstract: igbt sinewave inverter three phase bridge inverter in 180 degree and 120 squirrel cage induction generator
    Text: qualified IGBT, Diode components, modules • Influence over IGBT, module roadmap • Ability to , 210 0.77 226 0.87 239 0.94 248 0.98 254 1.00 256 0.98 254 0.94 248 0.87 239 0.77 226 , 1.571 1.745 1.920 2.094 sin scaled 255 0.87 239 0.77 226 0.64 210 0.50 192 0.34 172 , 106 0.00 128 0.17 150 0.34 172 0.50 192 0.64 210 0.77 226 0.87 239 0.94 248 0.98 254 , 172 0.50 192 0.64 210 0.77 226 0.87 239 0.94 248 0.98 254 1.00 256 0.98 254 0.94 248


    Original
    PDF 140HP 110VAC toyota Speed Sensor igbt sinewave inverter three phase bridge inverter in 180 degree and 120 squirrel cage induction generator

    Not Available

    Abstract: No abstract text available
    Text: Designs MA4E400 Series V3.00 Case Styles Description Each Schottky barrier diode quad consists , that each individual diode is in beam lead form. The beam lead construction assures minimum junction , style. The available packages are 226 , 227, 228 or 963. To order a beam lead part add "-906". Notes , . High speed switching, a necessary sampling requirement, is accom plished with the Schottky diode , enable the designer to select a diode with an appropriate barrier such that the RF sig nal input to the


    OCR Scan
    PDF MA4E400

    Not Available

    Abstract: No abstract text available
    Text: · · · MA4E400 Series V3.00 Case Styles Description Each Schottky barrier diode quad , each individual diode is in beam lead form. The beam lead construction assures minimum junction , a low barrier bridge quad housed in the 228 case style. The available packages are 226 , 227, 228 or , Package -6 5 °C to + 1 50 °C (Case Style 226 ) Beam Strength 2g (Case Style 906) 75 mW / junction Absolute , Schottky diode . Schottky diodes have switching sp eeds in the picosecond range. The four closely m atched


    OCR Scan
    PDF MA4E400

    RXMVB 2

    Abstract: rxmvb abb 1MRK 251 270 ohm resistor 015-UEN RK 251 204 RXMVB4 595-AD 016-BEN bistable impulse relay
    Text: for any other use. To protect electronic circuits against transients a diode unit across the coils of the dc relay can be used. For RXMVB 2 the diode is connected to 111(+) - 121(-) and 221(+) - 211(- , 116 118 124 214 228 226 224 213 227 225 223 RK 251 206-. + 122 214 228 226 224 , 118 222 224 226 228 113 115 117 221 223 225 227 318 316 314 312 428 426 424 317 315 313 311 427 425 423 RK 251 403-. + 121 212 114 116 118 222 224 226 228


    Original
    PDF 016-BEN SE970872) SE970878) 086-A 0086-B 0086-C 268-C 001-BEN 015-UEN SE-721 RXMVB 2 rxmvb abb 1MRK 251 270 ohm resistor 015-UEN RK 251 204 RXMVB4 595-AD 016-BEN bistable impulse relay

    226 e diode

    Abstract: No abstract text available
    Text: IGBT4 Modules SKM 50GB12T4 Inverse Diode E E=+ E,+ 26 7 <3 7 '6 63 :63 2'6 233 F3 G:;6 , typ. 6&< 3&< 3&; 2: >: :&<6 2&26 >&' 3&2 3&:< 2<3 max. '&6 3&@ 3&< 2> >> 2&36 2&6 Units H , © by SEMIKRON SKM 50GB12T4 Characteristics Symbol Conditions Inverse Diode E E3 E =+ I =8F , $ 8 :63 7$ 8 26 7 8 :63 7 8 26 7 8 :63 7 8 :63 7 >&< 3&< min. typ. 2&26 2&2 , IGBT4 Modules SKM 50GB12T4 ® Freewheeling Diode E3 E =+ I // Target Data Features


    Original
    PDF 50GB12T4 226 e diode

    1997 - SE1470

    Abstract: SD1410 SD1420 SD1440
    Text: 17 September 1997 SE1470 AlGaAs Infrared Emitting Diode FEATURES · Compact metal can , -63.TIF DESCRIPTION The SE1470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a , plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) SE1470-XXX .091( 2.26 ) CATHODE (CASE , ) DIA .122(3.10) .106(2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1470-XXXL .091( 2.26 ) .020 , Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM


    Original
    PDF SE1470 SD1420 SD1440 SD1410 INFRA-63 SE1470 SE1470-XXXL) SD1420

    1997 - GaAs 1000 nm Infrared Emitting Diode

    Abstract: SD1410 SD1420 SD1440 SE1450
    Text: 17 September 1997 SE1450 GaAs Infrared Emitting Diode FEATURES · Compact, metal can coaxial , photodarlington INFRA-63.TIF DESCRIPTION The SE1450 is a gallium arsenide infrared emitting diode mounted , decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51) SE1450-XXX .091( 2.26 ) CATHODE (CASE) ANODE , .122(3.10) .106(2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1450-XXXL .091( 2.26 ) .020 (0.51 , Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM


    Original
    PDF SE1450 SD1420 SD1440 SD1410 INFRA-63 SE1450 SE1450-XXXL) GaAs 1000 nm Infrared Emitting Diode SD1420

    2011 - CPW4-1200S010B

    Abstract: Cree SiC diode die diode marking 226
    Text: CPW4-1200S010B­Silicon Carbide Schottky Diode Chip Z-Rec Rectifier TM VRRM = 1200 V IF(AVG)= 10 A Features · · · · · · · Qc Chip Outline = 66 nC 1200-Volt Schottky , Size 2.26 x 2.26 mm Anode Pad Size 1.98 x 1.98 mm Anode Pad Opening 1.70 x 1.70 , Polyimide Note Chip Dimensions B symbol dimension mm C A A inch 2.26 0.089 B 2.26 0.089 C 1.70 0.067 D 1.70 0.067 D Part Number Anode


    Original
    PDF CPW4-1200S010B 1200-Volt CPW4-1200S010B W4-1200S010 CPW4-1200S010 Cree SiC diode die diode marking 226

    1997 - SE1470

    Abstract: SD1410 SD1420 SD1440 SE1470-XXX
    Text: SE1470 AlGaAs Infrared Emitting Diode FEATURES · Compact metal can coaxial package · 24 , a high intensity aluminum gallium arsenide infrared emitting diode mounted in a glass lensed metal , ) 2 plc decimals ±0.020(0.51) SE1470-XXX .091( 2.26 ) CATHODE (CASE) ANODE .020(0.51) DIA , (2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1470-XXXL .091( 2.26 ) .020 (0.51) DIA CATHODE , possible. SE1470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL


    Original
    PDF SE1470 SD1420 SD1440 SD1410 INFRA-63 SE1470 SE1470-XXXL) SD1420 SE1470-XXX

    1997 - GaAs 1000 nm Infrared Diode,

    Abstract: SD1410 SD1420 SD1440 SE1450
    Text: SE1450 GaAs Infrared Emitting Diode FEATURES · Compact, metal can coaxial package · 24 , INFRA-63.TIF DESCRIPTION The SE1450 is a gallium arsenide infrared emitting diode mounted in a , (0.12) 2 plc decimals ±0.020(0.51) SE1450-XXX .091( 2.26 ) CATHODE (CASE) ANODE .020(0.51 , ) .106(2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1450-XXXL .091( 2.26 ) .020 (0.51) DIA CATHODE , possible. SE1450 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL


    Original
    PDF SE1450 SD1420 SD1440 SD1410 INFRA-63 SE1450 SE1450-XXXL) GaAs 1000 nm Infrared Diode, SD1420

    transformer from 230V AC to 5V DC

    Abstract: 230V AC to 5V DC ic pj 53 diode 226 capacitor 230V AC to 5V DC using ic 230v dc 5a diode bridge 400V INDUSTRIAL voltage regulator dc capacitor 400v LB Nichicon BP5040
    Text: voltage range ( 226 to 358V DC for DC voltage conversion, 160 to 253V for AC voltage conversion) 3) DC , Parameter Symbol Min. Typ. Max. Unit Power supply voltage Vcc 226 282 358 V (dc) 4) Since no transformer , voltage Vi 226 282 358 V DC Output voltage Vo 4.7 5 5.3 V Vi=282V, lo=50mA Output current lo 0 - 100 mA , vacuum cleaner The diode bridge is used to extract zero cross signals. Consequently, if zero cross signals are not required, no diode bridge is required. ♦Selecting attached components (1) Diodes The


    OCR Scan
    PDF BP5040 BP5040 100mA transformer from 230V AC to 5V DC 230V AC to 5V DC ic pj 53 diode 226 capacitor 230V AC to 5V DC using ic 230v dc 5a diode bridge 400V INDUSTRIAL voltage regulator dc capacitor 400v LB Nichicon

    ac and dc circuit diagram

    Abstract: A 4661 tag 8630 97-series relay diode a1 86-308-2 diode a1 7 20 SP varistor
    Text: (according to type): 99.02 coil indication and EMC suppression modules for 97.01 and 97.02 Diode (+A1 , LED + Diode (+A1, standard polarity) (6.24)V DC LED + Diode (+A1, standard polarity) (28.60)V DC LED + Diode (+A1, standard polarity) (110.220)V DC LED + Varistor (6.24)V DC/AC LED + , 30.6 COM 30.3 4 11 A 2 8 COIL 1 A 1 22.6 97.51 97.51 32.5 97.52 97.52 , indication and EMC suppression modules for 97.51 and 97.52 Diode (+A1, standard polarity) (6.220)V DC


    Original
    PDF 25bient ac and dc circuit diagram A 4661 tag 8630 97-series relay diode a1 86-308-2 diode a1 7 20 SP varistor

    2008 - Not Available

    Abstract: No abstract text available
    Text: switch No feedback resistors ISET open/short protection Open diode /secondary winding protection 3 mm , voltage on the primary side and it eliminates the external feedback resistors. If the output diode or , A8724 ELECTRICAL CHARACTERISTICS Valid at VIN = VBAT = 3.6 V, RSET = 22.6 kΩ, TA = 25°C except , = VBAT = 3.6 V, RSET = 22.6 kΩ, TA = 25°C except indicates specifications guaranteed from â , 3.6 V, COUT = 100 μF, RISET = 22.6 kΩ, , TA ≈ 25°C 10 ILIM Step ILIM (A) 8 8


    Original
    PDF A8724

    86.10.0.024.0000

    Abstract: Tag 8610 diode A1 99.02.0024.59 99.02.0.230.59 097.01
    Text: data pages 247/248 Diode (+A1, standard polarity) (6.220)V DC LED (6.24)V DC/AC LED (28.60)V DC/AC LED (110.240)V DC/AC LED + Diode (+A1, standard polarity) (6.24)V DC LED + Diode (+A1, standard polarity) (28.60)V DC LED + Diode (+A1, standard polarity) (110.220)V DC LED + , sockets mm2 AWG 97.52 15.8 22.6 15.8 97.51 86 series timer modules (see technical data , technical data pages 247/248 Diode (+A1, standard polarity) (6.220)V DC LED (6.24)V DC/AC LED


    Original
    PDF
    ...
    Supplyframe Tracking Pixel