QSC133 Search Results

QSC133

Contextual Info: PLASTIC SILICON PHOTODARLINGTON OPTOELECTRONICS QSC133 DESCRIPTION PACKAGE DIMENSIONS U _ .1 2 6 3.20 R EFER EN C E SURFACE 106(2.69) The QSC133 is a silicon photodarlington encapsulated in an infrared transparent, black T-1 package. FEATURES .042 (1.0 7 )

DS300359

Abstract: "Infrared photodarlington" QSC133
Contextual Info: PLASTIC SILICON INFRARED PHOTODARLINGTON QSC133 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER SCHEMATIC 0.100 (2.54) NOM COLLECTOR 0.155 (3.94) 0.018 (0.46)

Contextual Info: PLASTIC SILICON PHOTODARLINGTON OPTOELECTRONICS QSC133 PACKAGE DIMENSION! DESCRIPTION | _ . 126 3.20 .106(2.69) REFERENCE SURFACE. Th e Q S C 133 is a silicon photodarllngton en capsulated in an infrared transparent, black T-1 package. II FEATURES Steel lead fram es for im proved reliability in solder

B345

Abstract: wcn1
Contextual Info: [*13 PLASTIC SILICON PHOTODARLINGTON HteuM* OPTOELECTRONICS QSC133 DESCRIPTION PACKAGE DIMENSIONS L _ .126 3.20 106(2.69) REFERENCE SURFACE The QSC133 is a silicon photodarlington encapsulated in an infrared transparent, black T-1 package. FEATURES .042 (1.07)-*

QECXXX

Contextual Info: PLASTIC SILICON PHOTODARLINGTON OPTOELECTROmCS QSC133 PA C K A G E DIM ENSIONS d e s c r ip t io n L _ 126 3.20 R EFER ENC E SURFACE .106(2.69) The QSC133 is a silicon photodarlington encapsulated in an infrared transparent, black T-1 package. FE A T U R B t

QRB1134

Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Contextual Info: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6

phototransistor

Abstract: phototransistor 600 nm qsd122
Contextual Info: Plastic Silicon Photosensors T-1 3 mm Detector Package 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER 0.100 (2.54) NOM Test Conditions Ee ␭p (nm) (mW/cm2) IC (ON) (mA) min max

L14F1 phototransistor datasheet

Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Contextual Info: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions

se113

Contextual Info: INFRARED COMPONENTS AND ASSEMBLIES opmLEcmmcs INFRARED COMPONENTS AND ASSEMBLIES Alphanumeric Product Listing Product Page Product Page Product Page 1N6264 . .3-127 1N6265 . . 3-131 1N6266 . . 3-135

irf 3502

Abstract: S12-1A02-01L PALCE16V8Z25PC RSF74Y100RM REF198 S10K250 PALCE16V8Z-25PC SA555P P6KE36A sa5205ad
Contextual Info: Semiconductor Directory Mfr.Õs Type Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 7.40 6.75 10.56 6.29 1.63 ADI ADI ADI ADI INT Ñ Ñ Ñ Ñ Ñ S10K14 S10K150 S10K20 S10K25 S10K250 Price Mfr.Õs Type Mfr.Õs Code Page

Contextual Info: OPTOELECTRONICS PLASTIC SILICON INFRARED PHOTOSENSORS T-1 3 mm P a rt N um ber J b v ceo ’c |ON| m in m a x u n its V m in ^Eo /V ce (nA)/(V) m ax N o te s P h o t o t r a n s is t o r NOM : „ 32, R e c e p t io n A n g le @ 1/2 P o w e r T QSC112 ±8°

phototransistor 600 nm

Abstract: lens photodiode phototransistor Phototransistor to-18 QSD124 Phototransistor QSE773 QSC112 phototransistor application circuit photo-transistor QSC114
Contextual Info: Optoelectronics Plastic Silicon Photosensors Part Number IC ON (mA) Test Conditions VCE (V) Ee (mW/cm2) λp (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max Sensor Type T-1 (3 mm) Detector Package QSC112 5 0.5 880 AlGaAs 1.00 4.00 30 100 Phototransistor

QSD123/QSD124

Contextual Info: OPTOELECTRONICS T-1 3 mm PLASTIC SILICON INFRARED PHOTOSENSORS .116 2.95 f REFERENCE N 193 (4.90) I' \ 030 (.76) NOM 1 I \ \ 052 Q.32) .032 (.082) I" P a rt N u m b er R ec ep tio n A n gle @ 1/2 S e n s itiv ity •c(ON) min m ax units B V ceo (V) min •cEO/ V CE

MAN-8610

Abstract: CNW82 HLMPD150A CNY17GF-1
Contextual Info: ËQ OPTOELECTRONICS P art N u m be r 1N6264 1N6265 1N6266 PART NUM BER INDEX P art N u m be r Page 95 _ 95 95 Page P art N u m be r Page P art N u m b e r Page P art N u m b e r Page CNW135 CNW135.300 15 CNY17GF-3.300 12 12 75 75 13 CNY17GF 4 GMC7975C GMC7975CA

TRANSISTOR D 880

Abstract: H21A1 photodiode TRansistor A 940 k 30 transistor l14f1 photodiode 022 020 transistor transistor l14f1 optologic 0118 transistor L14G2 transistor
Contextual Info: Fairchild Semiconductor Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes continued Mfr.Õs Type Fig. Power Out Min. VF Max. Peak Emission Wavelength (nm) Beam Angle 1/2 Angle (¡) F5F1