CNW82 Search Results

CNW83

Abstract: CNW82 CNW84 CNW85
Contextual Info: WIDE BODY, HIGH ISOLATION OPTOCOUPLERS DESCRIPTION The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor. The CNW82 and CNW84 do not have the base pin connected for improved noise immunity.

CNW82

Abstract: CNW83 CNW84 CNW85
Contextual Info: WIDE BODY, HIGH ISOLATION OPTOCOUPLERS DESCRIPTION The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor. The CNW82 and CNW84 do not have the base pin connected for improved noise immunity.

CNW83

Abstract: CNW82 phototransistor philips BS415 BS7002 UBB03
Contextual Info: Product specification Philips S em iconductors Wide body, high isolation optocouplers CNW82/CNW83 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum creepage distance 10 mm • High current transfer ratio and low saturation voltage, making

PHILIPS CNW82

Abstract: Quality Technologies optocouplers
Contextual Info: Philips Semiconductors Product specification Wide body, high isolation optocouplers CNW82/CNW83 2UALITY T E C H N O L O G I E S CORP S7E D 7 4 bb ôS l D D D 4 4 7 3 D41 M A T Y FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm « Minimum creepage distance

CNW82

Abstract: CNW83 CNW84 CNW85
Contextual Info: WIDE BODY, HIGH ISOLATION OPTOCOUPLERS DESCRIPTION The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor. The CNW82 and CNW84 do not have the base pin connected for improved noise immunity.

CNY17GF3

Abstract: CNY17GF-2 CNY17GF-1 CNX82 CNY17GF
Contextual Info: exì OPTOELECTRONICS OPTOCOUPLERS P h o to tr a n s is to r O u tp u t; G a A s In p u t N o b a s e c o n n e c tio n CTR @ Part Num ber 10mA l F<%) b v ceo ^E C O (V) ( ^ s ) m ax min m ax min min CNW82 40 - 50 7 - CNW84 63 320 80 7 CNX82A 40 250 50

Contextual Info: MIE D PHILIPS INTERNATIONAL TllQôSfc» QQ3Q43ti fi BIPHIN T-V /'*3 Philips Semiconductors Product specification Wide body, high isolation optocouplers CNW82/CNW83 FEATURES • W id e body D IL encapsulation, with a pin distance of 1 0 .1 6 m m • M inim um c re e p a g e distance

PHILIPS CNW82

Abstract: philips cnw83 BS415 BS7002 CNW82 CNW83 TRANSISTOR WM 9 transistor wm
Contextual Info: 7110fi5ti OOB O ^ t i ö B I P H I N MIE D PHILIPS INTERNATIONAL 7 - V Philips S em ico n d uctors / - 8 3 P ro du ct s p ecificatio n Wide body, high isolation optocouplers CNW82/CNW83 FEA TUR ES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

transistor fn 1016

Contextual Info: P roduct sp e cifica tio n P h ilip s S em icon ducto rs Wide body, high isolation optocouplers CNW82/CNW83 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum creepage distance 10 mm • High current transfer ratio and low saturation voltage, making

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

CNY17GF-2

Abstract: motorola optocoupler optocoupler 4N25 VDE CNW82 4n25 0884 qt mot schematic
Contextual Info: OPTOELECTRONICS HOW TO U S E THE O PTO CO U PLERS SECTIO N This section provides you with the physical dimensions, part numbers and operating characteristics for optocoupler components. The following is a sample layout with descriptions o f the information provided, including definitions of specifications on the opposite page.

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

ORB1134

Abstract: H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB 740L6000 OPB704 MAN4710 1LP6
Contextual Info: so OPTOELECTRONICS PART NUMBER INDEX P a rt Numbe* Part N u m b e r Part Num ber Part N um ber 1N6264 35 CNW138 17 CQX14 35 GMC2988C 145 H11C2.300 1N6265 35 CNW138.300 17 CQX15 35 GMC7175C 133 H11C3 22 1N6266 35 CNW139 17 CQX16 35 GMC7175CA 133 H11C3.300 22