QSD123 Search Results

Contextual Info: ÛUALITY TECHNOLO GIES CORP 3flE D B 74bbô51 G G G 3 ei3e] b E3ÖTY PHOTOSENSORS Characteristics at 25° C Part Number QSA122 QSA123 QSA124 QSA223 QSA224 QSB113 QSB114 QSB213 QSB214 QSC112 QSC113 QSC114 QSD122 QSD123 QSD124 QSD422 QSD423 QSD424 QSD613 QSD614

QSD124

Abstract: QSD122 QSD123
Contextual Info: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 QSD123 QSD124 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN EMITTER COLLECTOR SCHEMATIC 0.500 (1.25) 0.100 (2.54) NOM COLLECTOR 0.240 (6.10) 0.215 (5.45) NOTES:

220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.

L14F1 phototransistor datasheet

Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Contextual Info: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions

Optocoupler H22A1

Abstract: how to interface optocoupler with triac a 2631 optocoupler QRE1113 QRD1114 2631 optocoupler Optocoupler with triac rain SENSOR MOC3023 H22A1
Contextual Info: OPTOELECTRONICS A P P L I C AT I O N S BROCHURE IR Components Optocouplers LED Displays LED Lamps 2001 Multi-Market Products for a Changing World TM OPTOELECTRONICS APPLICATIONS BROCHURE TABLE OF CONTENTS Description Page VCR, Camcorder . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Contextual Info: EO PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD122/123/124 PACKAGE DIMENSIONS DESCRIPTIO N T h e Q S D 12X is a silicon phototransistor en capsulated in an infrared transparent, black T-13/4 package. FEA TU RES • Tight production distribution. ■ Steel lead fram es for improved reliability in solder

se113

Contextual Info: INFRARED COMPONENTS AND ASSEMBLIES opmLEcmmcs INFRARED COMPONENTS AND ASSEMBLIES Alphanumeric Product Listing Product Page Product Page Product Page 1N6264 . .3-127 1N6265 . . 3-131 1N6266 . . 3-135

irf 3502

Abstract: S12-1A02-01L PALCE16V8Z25PC RSF74Y100RM REF198 S10K250 PALCE16V8Z-25PC SA555P P6KE36A sa5205ad
Contextual Info: Semiconductor Directory Mfr.Õs Type Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 7.40 6.75 10.56 6.29 1.63 ADI ADI ADI ADI INT Ñ Ñ Ñ Ñ Ñ S10K14 S10K150 S10K20 S10K25 S10K250 Price Mfr.Õs Type Mfr.Õs Code Page

Contextual Info: OPTOELECTRONICS PLASTIC SILICON INFRARED PHOTOSENSORS T-1 3 mm P a rt N um ber J b v ceo ’c |ON| m in m a x u n its V m in ^Eo /V ce (nA)/(V) m ax N o te s P h o t o t r a n s is t o r NOM : „ 32, R e c e p t io n A n g le @ 1/2 P o w e r T QSC112 ±8°

phototransistor 600 nm

Abstract: lens photodiode phototransistor Phototransistor to-18 QSD124 Phototransistor QSE773 QSC112 phototransistor application circuit photo-transistor QSC114
Contextual Info: Optoelectronics Plastic Silicon Photosensors Part Number IC ON (mA) Test Conditions VCE (V) Ee (mW/cm2) λp (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max Sensor Type T-1 (3 mm) Detector Package QSC112 5 0.5 880 AlGaAs 1.00 4.00 30 100 Phototransistor

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122

Contextual Info: EO PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD122/123/124 PACKAGE DIMENSIONS DESCRIPTION The QSD12X is a silicon phototransistor encapsulated in an infrared transparent, black T-1% package. FEATURES • Tight production distribution. ■ Steel lead frames for improved reliability in solder

Contextual Info: QED121, QED122, QED123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED121, QED122 and QED123 are 880nm AlGaAs LEDs encapsulated in a clear peach tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs

QED222

Abstract: Fairchild 902 QED221 QED223 QSD22
Contextual Info: QED221, QED222, QED223 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED221, QED222 and QED223 are 880nm AlGaAs LEDs encapsulated in a clear purple tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs

QSD123/QSD124

Contextual Info: OPTOELECTRONICS T-1 3 mm PLASTIC SILICON INFRARED PHOTOSENSORS .116 2.95 f REFERENCE N 193 (4.90) I' \ 030 (.76) NOM 1 I \ \ 052 Q.32) .032 (.082) I" P a rt N u m b er R ec ep tio n A n gle @ 1/2 S e n s itiv ity •c(ON) min m ax units B V ceo (V) min •cEO/ V CE

MAN-8610

Abstract: CNW82 HLMPD150A CNY17GF-1
Contextual Info: ËQ OPTOELECTRONICS P art N u m be r 1N6264 1N6265 1N6266 PART NUM BER INDEX P art N u m be r Page 95 _ 95 95 Page P art N u m be r Page P art N u m b e r Page P art N u m b e r Page CNW135 CNW135.300 15 CNY17GF-3.300 12 12 75 75 13 CNY17GF 4 GMC7975C GMC7975CA

ORB1134

Abstract: H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB 740L6000 OPB704 MAN4710 1LP6
Contextual Info: so OPTOELECTRONICS PART NUMBER INDEX P a rt Numbe* Part N u m b e r Part Num ber Part N um ber 1N6264 35 CNW138 17 CQX14 35 GMC2988C 145 H11C2.300 1N6265 35 CNW138.300 17 CQX15 35 GMC7175C 133 H11C3 22 1N6266 35 CNW139 17 CQX16 35 GMC7175CA 133 H11C3.300 22

TRANSISTOR D 880

Abstract: H21A1 photodiode TRansistor A 940 k 30 transistor l14f1 photodiode 022 020 transistor transistor l14f1 optologic 0118 transistor L14G2 transistor
Contextual Info: Fairchild Semiconductor Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes continued Mfr.Õs Type Fig. Power Out Min. VF Max. Peak Emission Wavelength (nm) Beam Angle 1/2 Angle (¡) F5F1