QSD12X Search Results

L14LOI

Abstract: l14lti QSC11X H23LOI QSD12X QSD72X H23LOB
Contextual Info: MATCHED EMITTER/PHOTOSENSOR PAIRS Phototransistor/LED Pairs QPA1223 L14PX 96 F5DX (95) 20 mA/5V/.250” 7.5 - mA QPC1213 QSC11X (93) QEC12X (91) 20 mA/5V/.250” 5.0 - mA 30 QPD1223 QSD12X (93) QED12X (91) 20 mA/5V/.250” 10.0 - mA 30 QPD5223 QSD72X (93)

QSD12X

Contextual Info: [«xa PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD122/123/124 PACKAGE DIMENSIONS DESCRIPTION The QSD12X is a silicon phototransistor encapsulated in an infrared transparent, black T-1% package. FEATURES Tight production distribution. Steel lead fram es for im proved reliability in solder

Contextual Info: EO PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD122/123/124 PACKAGE DIMENSIONS DESCRIPTION The QSD12X is a silicon phototransistor encapsulated in an infrared transparent, black T-1% package. FEATURES • Tight production distribution. ■ Steel lead frames for improved reliability in solder

QED22X

Abstract: QED221 QED222 QED223
Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QED221 QED222 QED223 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM SCHEMATIC 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) ANODE

qed12x

Contextual Info: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°

D880

Contextual Info: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°

qed12x

Abstract: QED121 QED122 QED123 QSD122
Contextual Info: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°

qed12x

Abstract: QSB34 ul217 QED121 QED123UL
Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QED123UL PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM SCHEMATIC 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) ANODE NOTES: 1. Dimensions for all drawings are in inches (mm).

Contextual Info: QUALITY TECHNOLOGIES AIGaAs Infrared Emitting Diode QED223 DESCRIPTION The QED223 is an 880 AIGaAs LED encapsulated in a clear, purple tinted, plastic T-13/4 package. FEATURES • Tight production Ee distribution with 3:1 min/max ratio. • Steel lead frames for improved

Contextual Info: G aA s INFRARED EMITTING DIODE OPTOELECTRONICS QED233/234 PACKAGE DIMENSIONS DESCRIPTION The QED23X is a 940nm GaAs LED encapsulated in a clear plastic T-1% package. FEATURES Tight production Eedistribution. Steel lead frames for improved reliability in solder

QED221

Abstract: QED222 880nm
Contextual Info: LËU AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED221/222 PACKAGE DIMENSIONS DESCRIPTION The QED22X is an 880nm AIGaAs LED encapsulated in a clear, purple tinted, plastic T-13/4 package. FEATURES • Tight production Ee distribution. ■ Steel lead frames for improved reliability in solder

Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED233/234 DESCRIPTION PACKAGE DIMENSIONS The QED23X is a 940nm GaAs LED encapsulated in a clear plastic T-1% package. FEATURES • Tight production E, distribution. ■ Steel lead frames for improved reliability in solder

TIP 122 100 V

Abstract: TIP 122 transistor QED121 QED122 QED123 qsd122
Contextual Info: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • != 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°

H23LOI

Abstract: H23LOB L14LOI
Contextual Info: EO OPTOELECTRONICS MATCHED EMITTER/PHOTOSENSOR PAIRS Sensor LED Test F a m ily F am ily C o n d itio n s p a g e # I p a g e #) Part Num ber B V ceo (V ) 'C(ON) i f/ v c e / d m in m ax un its m in Phototransistor/LED Pairs QPA1223 L14PX (96) F5DX (95)

QED121

Abstract: QED123 Fairchild 902 QED122
Contextual Info: QED121, QED122, QED123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED121, QED122 and QED123 are 880nm AlGaAs LEDs encapsulated in a clear peach tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs

H23LOB

Contextual Info: OPTOELECTRONICS P a rt N u m b e r!2 MATCHED EMITTER/PHOTOSENSOR PAIRS Sensor F a m ily Test C o n d itio n s LED F a m ily B V ceo u n its V ) m in mA 30 lc (O N ) I f /V c e <D(1) m in m ax Phototransistor/LED Pairs QPA1223 L14PX F5DX 20 mA/5V/.250”

SEC TIP 127

Abstract: QEA123
Contextual Info: ÖUALITY TECHNOLOGIES CORP 3flE D Ei 74bfcjflSl 0003*^37 5 D ö T Y T - m - n INFRARED LIGHT EMITTING DIODES Characteristics at 25° C P ara­ m eter Emission A ngle a t Vi Power T est C ondi­ tions Peak W avelength A pertured R adiant Incidence If If = 20 m A

Contextual Info: ÛUALITY TECHNOLO GIES CORP 3flE D B 74bbô51 G G G 3 ei3e] b E3ÖTY PHOTOSENSORS Characteristics at 25° C Part Number QSA122 QSA123 QSA124 QSA223 QSA224 QSB113 QSB114 QSB213 QSB214 QSC112 QSC113 QSC114 QSD122 QSD123 QSD124 QSD422 QSD423 QSD424 QSD613 QSD614

Contextual Info: QED121, QED122, QED123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED121, QED122 and QED123 are 880nm AlGaAs LEDs encapsulated in a clear peach tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs