FO41 Search Results

H440

Abstract: PTB23001X PTB23003X PTB23003XA PTB23005X OC292
Contextual Info: P T B 23001X PTB23003X PT B 2 3 0 0 5 X PTB 23003XA PHILIPS INTERNATIONAL 5L.E T> m 7 11 0 fl2ti GCmfc.42fc, fl Tb M P H I N MICROWAVE POWER TRANSISTORS NPN silicon transistors fo r use in common-base class-B power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry, localized th ick oxide

KF448AV

Abstract: R015 marking
Contextual Info: SAW FILTER KF448AV TECHNICAL DATA SPECIFICATIONS FOR SAW FILTER Band pass filters for keyless Entry System. High stability and reliability with good performance and no adjustment. Wide and sharp pass band characteristics. B Low insertion loss and deep stop band attenuation for interference.

Contextual Info: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.

Contextual Info: BSE D N AtlER PHILIPS/DISCRETE • 1,1,53^31 001fc>B33 4 ■ -p -33 ~o\ Power Devices 55 MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE ♦ PL G HZ VCE (V ) (W> (« ) Gp nc <% ) CLASS C, MEDIUM POWER PTB23001X PTB23003X PTB23005X FO-41B

Contextual Info: OLE D N AMER PHILIPS/DISCRETE MAINTENANCE TYPE • bbS3T31 DDmT 31 LJE42002T T*- 3 3 - 0 S' MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-emitter class-A amplifiers up to 4 GHz.

TRANSISTOR SMD MARKING CODE NM

Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Contextual Info: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is

r3305

Abstract: PTB32005X PTB32001X PTB32003X
Contextual Info: J N AMER PH I L I P S / D I S C R E T E ObE LbSBTBl D OD1S1DS 1 • PTB32001X PTB32003X PTB32005X MICROW AVE POW ER T RA N SISTO R S N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

LTE42012R

Abstract: 5j12 transistor 307A
Contextual Info: N AMER PHILIPS/DI SCRETE GbE D ^ 5 3 ^ 3 1 D 0 m *177 LTE42012R T-ZZ-OÉr M ICROW AVE LINEAR POWER T RA N SISTO R N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to a frequency of 4,2 G H z in c.w. conditions in military and professional applications.

IEC134

Abstract: PTB42001X PTB42002X RTC4202X
Contextual Info: N AMER PHILIPS/DISCRETE ObE D bL53T31 0015111 7 • PTB4200ÌX PTB42002X T ­ r - 3 3 -< ? 7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base c!ass-B power amplifiers up to 4 ,2 GHz. . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

PTB42003X

Contextual Info: l'P-33'Ol PTB42003X \_ PHILIPS INTERNATIONAL St.E D • 7110fl2b DD4b44fl Mb? ■ P H I N MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C am plifier up to a frequency o f 4.2 GHz in CW conditions in m ilita ry and professional applications.

Meggitt 5w

Abstract: Meggitt CGS power resistor CGS 1R0 Meggitt CGS axial leaded resistor meggitt cgs 220r FCB meggitt resistors meggitt resistor 20k ohms
Contextual Info: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS High Power Resistor TYPE FC SERIES This small size pluggable, high power resistor is a popular product in the Meggitt CGS range. The resistors are wirewound on to an inert core of glass

Temex saw filter

Abstract: TMX Temex SAW filter marking code
Contextual Info: SAW Filters TMX ET03 SAW Bandpass Filter - RF Preliminary Specification Rev 1 Features .P01 Package Drawing & Pin out .P01 Technical Characteristics .P02

TRANSISTOR K 314

Abstract: MARKING 41B marking A1 TRANSISTOR PTB42003X 7Z94083
Contextual Info: V-3 3 '0 7 PTB42003X / \ _ PHILIPS INTERNATIONAL 5L.E D • 711D05b 004b44fl Mb? ■ PHIN MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C am plifier up to a frequency o f 4.2 GHz in CW conditions in m ilita ry and professional applications.

lte4002s

Abstract: 005129 industrial linear ic
Contextual Info: D EVELO PM EN T DATA LTE4002S T h is data sheet c o n ta in s advance in fo rm a tio n and sp e cificatio n s are subject t o c hange w it h o u t notice. PHILIPS INTERNAT ION AL SbE ]> • 711DflEb 004b514 SIS PHIN M IC R O W A V E LINEAR PO W ER T R A N SIST O R

Contextual Info: N AMER PHILIPS/DISCRETE DbE D • bbS3T31 0015115 4 ■ PTB42003X T - 33 - 0 7 MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C amplifier up to a frequency of 4,2 GHz in c.w. conditions in military and professional applications.

meggitt resistor 20k ohms

Contextual Info: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS High Power Resistor TYPE FC SERIES This small size pluggable, high power resistor is a popular product in the Meggitt CGS range. The resistors are

MEGGITT CGS SP

Abstract: mec CGS
Contextual Info: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS SMD Precision Current Sense Resistor TYPE S SERIES MEC CGS introduces a range of surface mount power resistors to meet today's circuit design needs. One design concept allows an engineer to choose from three styles Lo Ohm,

Contextual Info: SAW FILT ER TECHNICAL DATA KF931/V SPECIFICATIONS FOR SAW FILTER Band pass filters for RF circuits of Cordless phone CT-1+ • High stability and reliability with good performance and no adjustment. • Wide and sharp pass band characteristics. • Low insertion loss and deep stop band

Contextual Info: SAW FILTER KF448AV TECHNICAL DATA SPECIFICATIONS FOR SAW FILTER Band pass filters for keyless Entry System. ・High stability and reliability with good performance and no adjustment. ・Wide and sharp pass band characteristics. ・Low insertion loss and deep stop band attenuation for interference.

lte2

Abstract: 0261 230 154 LTE21009R LTE21015R
Contextual Info: DEVELOPMENT DATA | • T his data sheet contains advance Inform ation and specifications are subject to change w ithout notice. - bbSBT31 0 0 1 ^ 5 7 3 ■ LTE21009R LTE21015R Jl N AMER P H I L I P S / D I S C R E T E ObE D -

Contextual Info: Philips Semiconductors Product specification Microwave Transistors General TYPE DESIGNATION CODE F o u r t h l e t t e r s u f f i x l e t t e r Code structure The fourth letter indicates the supply voltage: The standard structures of type designation code for

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bb 5 3 T 31 Q O m ^ b ? b ■ J V LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich

OC1016

Abstract: SFE 1730 LTE21025R LTE21050R
Contextual Info: AMER P H I L I P S / D I S C R E T E Lb53T31 D D m ib3 T □ LE D D EV EL O P M EN T DATA LTE21025R T his data sheet contains advance information and r-3l-OiT specifications are subject to change w ithout notice. M IC R O W A V E LINEAR PO W ER T R A N SIST O R

application for bt 151

Abstract: LTE42005S LTE42008R R3305
Contextual Info: Jl N AMER PHILIPS/DISCRET E ObE D • bL53131 O D m ^ b ? b I LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich