BUK436-50A
Abstract: BUK436-50B SOT93 package
Contextual Info: N AMER P H I L I P S / D I S C R E T E HSE D Hi bfci53ci31 0 0 2 0 2 0 5 T Hi PowerMOS transistor BUK436-50A BUK436-50B T -3 « M GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic envelope. The device is intended to r use in
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q0202bsbuk436-50abuk436-50bbuk436+3ot-93t-39-t3sot93 package
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common emitter amplifier
Abstract: LKE27010R amplifier marking code D
Contextual Info: 1 I N AMER PHILIPS/DISCRETE OhE D • bfci53ci31 DD3,4T47 Ü ■ MAINTENANCE TYPE LKE27010R T-33-O ST M ICRO W AVE LINEAR PO W ER TRANSISTOR NPN transistor for use in a common-emitter class-A linear power amplifier up to 3,3 GHz. Diffused emitter ballasting resistors, interdigitated structure, multiceli geometry and gold metallization
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bfci53cdd14tm7lke27010rt-33-oit+6fo-53lke2701t-33-05to200common emitter amplifieramplifier marking code d
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BR210S
Abstract: TA505 50J2 BR210
Contextual Info: N AMER PHILIPS/DI SCRE TE DbE D • bbS3TBl G011011 S ■ ~ Il BR210 SERIES y T - 2 S ' O G ~ BREAKOVER DIODES A range o f glass-passivated bidirectional breakover diodes in th e T 0 -2 2 0 A C o u tlin e , available in a + / —
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q011011br210t0-220aco-220ac+7bb53131dq11q21m2683li53li31br210sta50550j2
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BLX67
Abstract: mrtil transistor 3568
Contextual Info: N AMER PHILIPS/DISCRETE 8 6D ObE 01766 I D 7 -" ~ j • 1^53^31 G014DDM 3 - o Jr ~ BLX67 A U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V,
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g014ddmblx67t-33-mrtil+1transistor 3568
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cnw136
Abstract: CNW4502 Optocoupler 601 BS415 BS6301 BS7002 CNW135
Contextual Info: Philips Sem iconductors Product specification Wide body high isolation, high-speed optocouplers FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum clearance of 9.6 mm and minimum creepage of 10 mm • 11 MHz bandwidth •
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cnw135/cnw136/cnw4502elemen502ucb372gg3s37l+7cnw136cnw4502optocoupler 601bs415bs6301bs7002cnw135
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OM931
Abstract: OM961 KL-139 philips om961
Contextual Info: N AMER PHI LIPS/DISCRETE 2SE D B ^53=531 □ 0 2 0 1 3 ci T I OM931 OM961 T-W-oS'bl HYBRID INTEGRATED CIRCUIT HI-FI AUDIO POWER AMPLIFIERS The OM931 and OM961 are th in -film h y b rid integrated c irc u it h i-fi audio a m p lifie rs fo r sinusoidal o u tp u t pow er up to 60 W. The modules o ffe r m axim u m design possibilities regarding a m p lific a tio n ,
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om931om961hbs3t31g0ed144+2kl-139philips om961
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ECG1111
Abstract: ODD4037 tv schematic diagram PHILIPS CI 7405 schematic diagram of 24 DC power supply
Contextual Info: 17E Q PHILIPS E C G INC • 1^53*126 Q004D3t. 3 ECG1111 AUDIO AM PLIFIER semiconductors SCHEMATIC DIAGRAM CONNECTION DIAGRAM top view -?vs • POWER 4 W (24 V - 1611) • s e L jM j e n t e r i n g BIAS • LOW QUIESCENT OUTPUT CURRENT • NO CRO SS OVER DISTORTION
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ecg1111t-74-05-0114-leadodd4037+3tv schematic diagram philipsci 7405schematic diagram of 24 dc power supply
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T3D 90
Abstract: CR5978 DD322
Contextual Info: N A 1ER PHILIPS/ D IS CR ET E b'iE J> b b 5 3 ci31 0G322SÔ 2fl2 H A P X Philips Semiconductors Preliminary specification Triple video output amplifier CR5978 FEATURES QUICK REFERENCE DATA • Three amplifiers in one package SYMBOL • DC coupled video amplifier for
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0g322scr5978cr5978r/70cr5978r/90+3cr5978/70t3d 90dd322
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Philips KS 40 Temperature Control
Abstract: BUZ74 T0220AB hh4f 72312
Contextual Info: N AMER P H I L I P S / D I S C R E T E ObE D t.bS3T31 G014SQ7 5 • ” PowerMOS transistor BUZ74 , May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bs3131d01m507buz74t0220ab+50s150t-39-11philips ks 40 temperature controlhh4f72312
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ECG129
Abstract: ECG1549 VU peak hold ECG1509 Peak LED level meter driver ic 50 led VU meter 20 led VU meter transistor 45406 30 led VU meter stereo ECG1649
Contextual Info: PHILIPS E C G INC 17E ECG Semiconductors Features • Fast responding electronic VU meter • Drives LED s, LC D s, or vacuum fluorescents • Bar or dot display mode externally selectable by user • Expandable to displays of 70 dB • Internal voltage reference from 1,2 V
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10-stepecg1549ecg519ecg1649+8ecg129vu peak holdecg1509peak led level meter driver ic50 led vu meter20 led vu meter transistor4540630 led vu meter stereo
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psd3xx
Abstract: PSD302 16-Blt PSD301 PSD303 T12A T23A
Contextual Info: N A PC /PH ILIPS SEMICOND h lE D bhS3T24 □D71ññ7 OTT « S I C 3 Preliminary specification Philips Semiconductors Microcontroller Peripherals Field-programmable microcontroller peripheral Key Features □ Single Chip Programmable Peripheral for Microcontroller-based Applications
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bb53t24dd71flfl7psd303psd303-90+844-pinpsd303-12psd3xxpsd30216-bltpsd301t12at23a
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sy 171
Abstract: diode sy 171 BUZ76 T0220AB
Contextual Info: BUZ76 PftwprMOS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl 0D14M7T H m ~ T - ^ - U May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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buz760d14m7tt0220abbys3t31+3t-39-11sy 171diode sy 171
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t100c
Abstract: BUK452-50A BUK452-50B T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • btS3*131 002D430 4 ■ PowerMOS transistor BUK452-50A BUK452-50B T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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002dm3buk452-50abuk452-50bbuk452+2t100ct0220ab
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