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    sy 171

    Abstract: diode sy 171 BUZ76 T0220AB
    Contextual Info: BUZ76 PftwprMOS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl 0D14M7T H m ~ T - ^ - U May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    buz760d14m7tt0220abbys3t31+3t-39-11sy 171diode sy 171 PDF