BL53T31 Search Results

1N821

Abstract: N821 1N821A 1N825 N821A DIODE 1N825 1N827A 1N823 1N827 1N829
Contextual Info: • bL53T31 002L.flfl5 Mb? H A PX N AMER PHILIPS/DISCRETE b^E 1N821 to 1N829 1N821A to 1N829A J> VOLTAGE REFERENCE DIODES Voltage reference diodes in a DO-34 envelope. They have a very low temperature coefficient and are primarily intended for use as voltage reference sources in measuring instruments such as digital

IEC134

Abstract: PTB42001X PTB42002X RTC4202X
Contextual Info: N AMER PHILIPS/DISCRETE ObE D bL53T31 0015111 7 • PTB4200ÌX PTB42002X T ­ r - 3 3 -< ? 7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base c!ass-B power amplifiers up to 4 ,2 GHz. . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

Contextual Info: • bL53T31 0025b57 8^13 « A P X N AMER PHILIPS/D ISCR ETE b?E ]> BST86 J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in th in and th ick-film circuits fo r application w ith relay, high-speed

BST86

Abstract: TRANSISTOR SMD 2X y TRANSISTOR SMD 2X K smd transistor marking TL transistor smd marking JT smd transistor marking u d
Contextual Info: • bL53T31 D0SSb57 fl43 * A P X N AflER PHILIPS/DISCRETE BST86 b?E ]> N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode ve rtica l D-MOS tran sisto r in SO T89 envelope and designed fo r use as Surface M ounted Device SMD in th in and th ic k -film circ u its fo r a p p lica tio n w ith relay, high-speed

optocoupler a 3131

Abstract: optocoupler 3131 optocoupler LP 250 3131 optocoupler MCT26 314 optocoupler L002 optocoupler 450 rfu20
Contextual Info: J\_ MCT26 T O OPTOCOUPLER Optocoupler in a Dl L plastic envelope. The MCT26 comprises an infrared GaAs diode and a npn silicon phototransistor. UL — Covered under UL component recognition FILE E 90700 VDE — Approved according to VDE 0883/6.80 Reference voltage VDE 0110b Tab 4 : AC 380 V/DC 450 V - isolation group C

metal rectifier diode 40A

Abstract: BYV18 BYV18-30 BYV18-35 BYV18-40A M0796
Contextual Info: I I N AMER PHILIPS/DISCRETE □ bE D ^53=131 G011E43 4 BYV18 SERIES T-03-17 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence o f stored charge . They are intended for use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and

Contextual Info: Philips Components Data sheet status Product specification date of Issue October 1990 2N7000 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA FE A T U R E S . L o w R 0S on SYM BOL • Direct interface to C-M O S, TTL,

Contextual Info: N AMER PHILIPS/DISCRETE • ObE D i i_ bb53=131 0014=163 4 ■ LUE2003S LU E2009S -K-1Z-OS MICROWAVE LINEAR POWER TRANSISTORS NPN silicon transistors for use in common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, a self-aligned process entirely ion implanted and gold sandwich

BUK445

Abstract: BUK445-500A BUK445-500B IE-04
Contextual Info: N AMER PHI LI PS /DIS CR ETE 2SE D • ^53131 0020410 =1 ■ BUK445-500A BUK445-500B PowerMOS transistor QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

bot64

Abstract: BDT65A BDT64 BDT65C BDT64B BDT65B DT6-4 64a diode BOT65
Contextual Info: BDT64; 64A BDT64B; 64C SILICON DARLINGTON POWER TRANSISTORS P N P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T O -220 plastic envelope. N PN complements are BOT65,

BY509

Abstract: diode BY509
Contextual Info: _ U _ N AMER PHILIPS/DISCRETE QbE D ^53= 131 D 0H 01S 4 • EJYDUa T-03-09 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODE E.H.T. rectifier diode in a glass envelope intended fo r use in high-voltage applications such as m ulti­ pliers, e.g. tripler circuits. The device features non-snap-off characteristics. Because o f the smallness of

BT134W-500D/600D2

Contextual Info: bbSBTBl 0025b75 flb^ H A P X Philips Semiconductors Product specification BT134W series Triac N AMER PHI LIP S/D ISCRET E b?E D GENERAL DESCRIPTION QUICK REFERENCE DATA G lass passivated triacs in SO T223 envelopes suitable for surface m ounting. T hey are intended fo r

BYV73-35

Abstract: BYV73-40A BYV73-40 BYV73 BYV73-30 metallic junction diode BYV73-35 DIODE
Contextual Info: NI AMER P H ILIPS/DISCRETE OLE D • bbS3T31 OD114MB 1 ■ I BYV73 SERIES V _ T -0 3 -1 9 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES H ig h -efficien c y sc h o ttky -b a rrier do ub le re c tifie r diodes in plastic envelopes featu rin g lo w fo rw ard

Contextual Info: • bbSB^Bl 0025137 440 APX N AUER PHI LIPS/DISCRETE b?E BFR30 BFR31 T> J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Planar epitaxial symmetrical junction field effect transistor in a microminiature plastic envelope. It is intended for low level general purpose amplifiers in thick and thin-film circuits.