BFR31 Search Results

BFR31

Abstract: BFR30 MARKING CODE 7E VF 53 TAM transistor marking code 7E SOT-23 BFR31 MARKING CODE
Contextual Info: • bb53T31 0025137 440 H A P X BFR30 BFR31 b?E D N AMER P H I L I P S / D I S C R E T E 7 V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Planar epitaxial symmetrical junction field effect transistor in a microminiature plastic envelope. It is intended for low level general purpose amplifiers in thick and thin-film circuits.

BFR31

Abstract: BFR30LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J F E T A m p lifie rs BFR30LT1 BFR31LT1 N -C h a n n e l I 2 SOURCE 1 DRAIN 2 CASE 3 1 8 -0 8 , STYLE 10 S O T -2 3 TO -236A B MAXIMUM RATINGS Rating Symbol Value V DS 25 Vdc VGS 25 Vdc Symbol Max Unit PD 225 mW 1.8

BC237

Abstract: BF245 marking code M2 SOT23 BC547 collector characteristic curve 2n3053 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers BFR30LT1 BFR31LT1 N–Channel 2 SOURCE 3 3 GATE 1 2 1 DRAIN CASE 318 – 08, STYLE 10 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Gate – Source Voltage

BFR31

Abstract: BFR30 2N5457 BFR30LT1 BFR31LT1 M2 MARKING SOT23 JFET 2N5457 lp "sot23 marking motorola" marking M2 JFET
Contextual Info: BFR30LT1 BFR31LT1 MAXIMUM RATINGS Symbol Value Drain-Source Voltage Vos 25 Vdc Gate-Source Voltage VGS 25 Vdc Rating Unit CASE 318-07, STYLE 10 SOT-23 TO-236AB THERMAL CHARACTERISTICS Characteristic Symbol Max U nit Pd 225 mW 1.8 m W fC r 0JA 556 °C/W Pd

BFR30

Abstract: BFR31 MDA669 MDA670
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 1997 Dec 05 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel

BFR31

Abstract: marking M2p 21 sot23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 1997 Dec 05 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel

2n3819 field-effect transistors

Abstract: MPF102 MMBF-5457 bf245b
Contextual Info: Junctional Field−Effect Transistors JFETs Low−Frequency/Low−Noise Re Yfs @ 1 kHz Re Yos @ 1 kHz mmho Min µmho Max − − − 2N5460 2N5461 2N5462 − − − 3.0 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5 MMBF5460LT1 BFR30LT1 BFR31LT1 N−Channel 2N3819 2N5457

BFR30

Abstract: BFR31 marking M2p 21 sot23 m2p SOT23 MDA660
Contextual Info: Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. 3 • Low level general purpose amplifiers in thick and

Contextual Info: M A X IM U M RATINGS Symbol Value Unit Drain-Source Voltage Rating VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc BFR30LT1 BFR31LT1 CASE 318-07, STYLE 10 SOT-23 TO-236AB TH ER M A L CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/°C r »j a 556

BFR31

Abstract: BFR30
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1997 Dec 05 Philips Semiconductors Product specification N-channel field-effect transistors

BFR30LT1

Abstract: BFR31 BFR30 BFR31LT1
Contextual Info: MOTOROLA Order this document by BFR30LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers BFR30LT1 BFR31LT1 N–Channel 2 SOURCE 3 3 GATE 1 2 1 DRAIN CASE 318 – 08, STYLE 10 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage

IC 4093 pin configuration

Abstract: IC 4093 marking 5Y bry 55 usage 4392 BFR31 BCV27 BFR30 R 25 10K1001
Contextual Info: ÿ n channel field effect transistors transistors à effet de champ canal ri iho m so n -csf Types SO 4416 30 0,1 5 15 B F R 3 0 (R BFR31 (R) 25 25 0,2 0,2 4 1 10 5 SO 245 A (R) SO 245 B (R) SO 245 C (R) 30 30 30 5 5 5 SO 3966 30 0,1 BSR 56 BSR 57 BSR 58

Contextual Info: ON Semiconductort BFR30LT1 BFR31LT1 JFET Amplifiers N–Channel 2 SOURCE 3 3 GATE 1 1 DRAIN 2 CASE 318–08, STYLE 10 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc Symbol Max

BFR30LT1

Abstract: BFR30 BFR31 BFR31LT1
Contextual Info: MOTOROLA Order this document by BFR30LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers BFR30LT1 BFR31LT1 N–Channel 2 SOURCE 3 3 GATE 1 2 1 DRAIN CASE 318 – 08, STYLE 10 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage

Contextual Info: _ BFR30 BFR31 JK N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Planar epitaxial symmetrical junction field effect transistor in a m icrom iniature plastic envelope. It is intended fo r low level general purpose amplifiers in thick and thin -film circuits.

BFR30

Abstract: BFR30LT1 BFR30LT1G BFR31 BFR31LT1 BFR31LT1G
Contextual Info: BFR30LT1, BFR31LT1 JFET Amplifiers N−Channel Features • Pb−Free Package is Available http://onsemi.com 2 SOURCE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ

buz90af

Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Contextual Info: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 1997 Dec 05 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel

BFR30

Abstract: BFR30LT1 BFR31 BFR31LT1
Contextual Info: ON Semiconductort BFR30LT1 BFR31LT1 JFET Amplifiers N–Channel 2 SOURCE 3 3 GATE 1 1 DRAIN 2 CASE 318–08, STYLE 10 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc Symbol Max

Contextual Info: BFR30LT1, BFR31LT1 JFET Amplifiers N−Channel Features • Pb−Free Package is Available http://onsemi.com 2 SOURCE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ

Contextual Info: • bbSB^Bl 0025137 440 APX N AUER PHI LIPS/DISCRETE b?E BFR30 BFR31 T> J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Planar epitaxial symmetrical junction field effect transistor in a microminiature plastic envelope. It is intended for low level general purpose amplifiers in thick and thin-film circuits.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFE T A m p lifie rs BFR30LT1 BFR31LT1 N-Channel 2 SOURCE 1 2 CASE 3 1 8 -0 8 , STYLE 10 S O T -23 TO -236A B MAXIMUM RATINGS Symbol Value Unit D rain-Source Voltage VdS 25 Vdc G a te -S o u rce Voltage vgs 25 Vdc Symbol

BFR30

Abstract: BFR31
Contextual Info: M A X IM U M RATINGS Symbol Value Unit Drain-S ource Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc Rating BFR30LT1 BFR31LT1 CASE 318-07, STYLE 10 SOT-23 TO-236AB THERM AL CHARACTERISTICS Characteristic Symbol Max Pd 225 mW Total Device Dissipation FR-5 B oard,*

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References