IEC134
Abstract: PTB42001X PTB42002X
Contextual Info: 1 - 3 IN T E R N A T IO N A L SbE D • 711DêSfc. - 0 / PTB42001X PTB42002X L P H IL IP S 3 GDMmMM Ô11 ■ P H IN MICROWAVE POWER TRANSISTORS NPN silicon transistors fo r use in common-base class-B power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, interdigitated structure, m ulticell geometry, localized th ick oxide
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ptb42001xptb42002xgd4l444fo-41b+1iec134
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IEC134
Abstract: PTB42001X PTB42002X RTC4202X
Contextual Info: N AMER PHILIPS/DISCRETE ObE D bL53T31 0015111 7 • PTB4200ÌX PTB42002X T r - 3 3 -< ? 7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base c!ass-B power amplifiers up to 4 ,2 GHz. . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide
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bl53t31ptb4200ptb42002x33-or+3ptb42001xiec134rtc4202x
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Contextual Info: N AUER PHILIPS/DISCRETE ObE D • bb53T31 0 0 1 5 111 7 ■ PTB42001X PTB42002X J L T - 5 3 -/2 ? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz,
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Contextual Info: BSE D N AtlER PHILIPS/DISCRETE • 1,1,53^31 001fc>B33 4 ■ -p -33 ~o\ Power Devices 55 MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE ♦ PL G HZ VCE (V ) (W> (« ) Gp nc <% ) CLASS C, MEDIUM POWER PTB23001X PTB23003X PTB23005X FO-41B
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001fcptb23001xptb23003xptb23005x+4fo-41bptb32001xptb32003xptb32005x
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829abf0262abf0262om3351n5821idom336om2061om926buk645om2060bly94
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350
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marking YJ transistors
Abstract: IEC134 PTB42001X PTB42002X
Contextual Info: 1 - 3 3 - 0 / PTB42001X _ PHILIPS INTERNATIONAL SbE D • J[PTB42 711DflSfc, DD4L444 fill ■ P H I N MICROWAVE POWER TRANSISTORS N PN silicon transistors for use in common-base class-B power amplifiers up to 4.2 GHz. Diffused emitter ballasting resistors, interdigltated structure, multicell geometry, localized thick oxide
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ptb42001xptb42002xzq-50marking yj transistors+1iec134
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc
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OP222
Abstract: FO-91 TRANSISTOR package FO-91 d 1047 transistor PTB23001X PTB23005X PTB32001X PTB32003X FO-41-B PTB42001X
Contextual Info: H AMER PHILIPS/DISCRETE BSE D • bfc,S3T31 D01b533 4 ■ f - 33-£7/ Power Devices MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE t Gp PL GHZ VC E (V> <w> (dB) " ; nc (%> CLASS C, MEDIUM POWER PTB23001X PTB23Û03X PTB23005X FO-41B FO-41B
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ptb23001xfo-41bptb23ptb23005x+8ptb32001xptb32003xop222fo-91 transistor packagefo-91d 1047 transistorfo-41-bptb42001x
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
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ba220ba221ba223ba281+16ba314ba315ba316ba317ba318ba423fet bfw10kp101afet bfw11bdx38kpz20gcqy58abfw10 fetrpw100b0943of fet bfw11
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FO-229
Contextual Info: 69 RF/Microwave Devices Microwave Transistors, Continuous Power cont. Type No Package Outline ' f " (GHz) (V| PL1"> (W) Gpo<2) (dB) CLASS A, MEDIUM POWER (cont.) LA E4001R LA E4 002 S LTE4002S LTE42005S LTE42008R LTE42012R 4.0 4.0 4.0 4.2 4.2 4.2 15 18 18
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