FLK027 Search Results

FLK027 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLK027WG		Eudyna Devices	X, Ku Band Power GaAs FET	Original	PDF	80.65KB	4
FLK027WG-E1		Fujitsu	FET: P Channel: ID 0.15 A	Original	PDF	80.5KB	4
FLK027XP		Fujitsu	GaAs FET & HEMT Chip	Original	PDF	89.79KB	4
FLK027XP-E1		Fujitsu	FET: P Channel: ID 0.15 A	Original	PDF	89.78KB	4
FLK027XV		Fujitsu	GaAs FET & HEMT Chip	Original	PDF	89.79KB	4

FLK027 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FLK027WG Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general	Original	FLK027WG FLK027WG	PDF
FLK027WG Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general	Original	FLK027WG FLK027WG FCSI0598M200	PDF
108 to 174 mhz Abstract: FLK027XP FLK027XV Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	FLK027XP, FLK027XV FLK027XV FCSI0598M200 108 to 174 mhz FLK027XP	PDF
FLK027WG Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general	Original	FLK027WG FLK027WG FCSI0598M200	PDF
KU 601 Abstract: FLK027WG FLK027 Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general	Original	FLK027WG FLK027WG KU 601 FLK027	PDF
fujitsu gaas fet Abstract: FLK027WG FLK027 Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-\|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: riadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general	OCR Scan	FLK027WG FLK027WG FCSI0598M200 fujitsu gaas fet FLK027	PDF
1278n Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	FLK027XP, FLK027XV FLK027XV 1278n	PDF
Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	FLK027XP, FLK027XV FLK027XV FLK027XP	PDF
FLK027XP Abstract: FLK027XV urn 3177 GaAs FET HEMT Chips Contextual Info: FLK027XP, FLK027XV - GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-\|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION	OCR Scan	FLK027XP, FLK027XV FLK027XV FCSI0598M200 FLK027XP urn 3177 GaAs FET HEMT Chips	PDF
FLK027XP Abstract: FLK027XV Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	FLK027XP, FLK027XV FLK027XV Unit4888 FLK027XP	PDF
Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	FLK027XP, FLK027XV FLK027XV FCSI0598M200	PDF
FLK027XP Abstract: GaAs FET HEMT Chips FLK027XV Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	FLK027XP, FLK027XV FLK027XV FLK027XP FLK027XP GaAs FET HEMT Chips	PDF
Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general	Original	FLK027WG FLK027WG	PDF
FLK027WG Contextual Info: FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general	Original	FLK027WG FLK027WG PT4888	PDF

Filtronic Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500 Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15	Original	FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B Filtronic EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500	PDF
FLL57MK Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.	Original	FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME	PDF