FET IRF830 Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

sss4n60a

Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
Contextual Info: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high

MTM4N45

Abstract: fet irf830 MTP4N45 IRF830
Contextual Info: IRF830 Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. http://onsemi.com

fet irf830

Abstract: MTM4N45
Contextual Info: IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds

IRFBE40

Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
Contextual Info: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800

Contextual Info: M O T O R O L A SC f X S T F S / R F . bflF J> • b3b72S4 00^0440 00Ö ■ M O T b MOTOROLA ■ SEM IC O N D U C T O R TECHNICAL DATA IRF830 P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate This T M O S Power FET is designed for high

SSD2104

Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
Contextual Info: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040

irf1740

Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Contextual Info: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040

power MOSFET IRF740 driver circuit

Abstract: h-bridge power MOSFET IRF740 working of mosfet IRF450 IRF510 SEC mosfet transistor IRF520 FET IRF730
Contextual Info: DESIGN RELIABILITY PREFACE PART 1-FAILURE MECHANISMS INTRODUCTION T h is a p p lic a tio n n o te d is c u s s e s w h y a n d h o w M O S FET devices fail in sw itch -m o d e applications. It de als w ith th e issue o f ruggedness in the design o f the device, and w ith system design strategies tha t can

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541

Contextual Info: PD -97671 IRF8308MPbF IRF8308MTRPbF DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V l Dual Sided Cooling Compatible 

IRF8306M

Abstract: irf8306
Contextual Info: PD - 97670 IRF8306MPbF IRF8306MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical values unless otherwise specified V V R R DSS GS DS(on) DS(on) Integrated Monolithic Schottky Diode 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V

Contextual Info: PD - 97670 IRF8306MPbF IRF8306MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical values unless otherwise specified V V R R DSS GS DS(on) DS(on) Integrated Monolithic Schottky Diode 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V

IRF830

Contextual Info: IRF830 Iß ANSYS Power Field Effect Tïansistor aiCTRomcs LIMITED N-Channel Enhancement Mode • Silicon Gate for Fast Switching Speeds • Low R d s oii to Minimize On-Losses, Specified at Elevated Temperature • Rugged — SO A is Power Dissipation Limited

Contextual Info: IRF8306MPbF l RoHS Compliant Containing No Lead and Halogen Free HEXFET Power MOSFET plus Schottky Diode ‚  Typical values unless otherwise specified Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V

IRF8302M

Contextual Info: IRF8302MPbF l l l l l l l l l l l RoHs Compliant and Halogen-Free  HEXFET Power MOSFET plus Schottky Diode ‚ Integrated Monolithic Schottky Diode Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible 

IRF8302M

Contextual Info: PD - 97667 IRF8302MPbF IRF8302MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant and Halogen-Free  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V

Contextual Info: IRF8308MPbF DirectFET™ Power MOSFET ‚ RoHs Compliant Containing No Lead and Bromide  Typical values unless otherwise specified l Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible  30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V

IRF8302M

Abstract: IRF8302MTRP
Contextual Info: PD - 97667 IRF8302MPbF IRF8302MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant and Halogen-Free  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V

IRF470

Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Contextual Info: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0

Malouyans

Abstract: RF830 Spice 2 computer models for hexfets HEXFETs FETs HEXFET SPICE VQE 22 AN-975B
Contextual Info: APPLICATIO N NOTE 975B SPICE Computer Models for HEXFET Power MOSFETs HEXFET is a trademark of International Rectifier by S. Malouyans Introduction an accurate m ethod o f representing the variation in C g j. However, this m ust be achieved w ithout m aking excessive

TRANSISTOR SMD 58W

Abstract: smd transistor E21 PC-B2510-T1 TRANSISTOR SMD 58W 87 PC-B4317-L1 pc-b2510 PFc CIRCUIT ml4822 ZVS DRIVER P-44317-EC p-44317
Contextual Info: June 1996 Application Note 42032 ML4822 Power Factor Correction With Zero Voltage Resonant Switching INTRODUCTION The boost converter is a popular topology for improved power factor and reduced line harmonics, as specified in IEC 555-2 and other more recent standards. With this

diode IN5818 equivalent

Abstract: TRANSISTOR SMD 58W IN4747A smd diode 101a WIMA FKP1 smd 58w P-44317-EC fan4822 wima fkp1 b2 saturable core oscillator
Contextual Info: www.fairchildsemi.com Application Note 42032 FAN4822 Power Factor Correction With Zero Voltage Resonant Switching Introduction The boost converter is a popular topology for improved power factor and reduced line harmonics, as specified in IEC 555-2 and other more recent standards. With this solution