Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRFS640A Search Results

    IRFS640A Datasheets (5)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRFS640A
    Fairchild Semiconductor Rugged Gate Oxide Technology Original PDF 312.44KB 7
    IRFS640A
    Fairchild Semiconductor Advanced Power MOSFET Original PDF 267.97KB 7
    IRFS640A
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRFS640A
    Fairchild Semiconductor Advanced Power MOSFET Scan PDF 171.94KB 6
    IRFS640A
    Samsung Electronics Improved gate charge Scan PDF 297.05KB 6
    SF Impression Pixel

    IRFS640A Price and Stock

    Fairchild Semiconductor Corporation

    Fairchild Semiconductor Corporation IRFS640A

    IN STOCK SHIP TODAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Component Electronics, Inc IRFS640A 15
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    IRFS640A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ld18a

    Abstract: IRFS640A OA 91 diode T0-220F
    Contextual Info: IRFS640A Advanced Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|aA(Max.) @ V DS = 200V ■ Lower RDS(ON) : 0 .1 4 4 £ l(T y p .) 00 Rugged Gate Oxide Technology


    OCR Scan
    irfs640ald18aoa 91 diodet0-220f PDF

    IRFS640A

    Contextual Info: IRFS640A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.18 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original
    irfs640ao-220f PDF

    IRFS640A

    Contextual Info: IRFS640A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.18 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ V DS = 200V


    Original
    irfs640ao-220f PDF

    IRFS640A

    Contextual Info: IRFS640A Advanced Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|aA(Max.) @ V DS = 200V ■ Lower RDS(ON) : 0 .1 4 4 £ l(T y p .) 00 Rugged Gate Oxide Technology


    OCR Scan
    irfs640a PDF

    IRFS640A

    Abstract: IRFS640
    Contextual Info: IRFS640A Advanced Power M O SFET FEATURES D S S R u g g e d G a te O x id e T e c h n o lo g y • L o w e r In p u t C a p a c ita n c e ■ Im p ro v e d G a te C h a rg e ^ D S o n = ■ E x te n d e d S a fe O p e ra tin g A re a ■ L o w e r L e a k a g e C u rre n t : 1 0 |jA (M a x .) @


    OCR Scan
    irfs640airfs640 PDF

    IRFS640A

    Abstract: mosfet39 IRFS640
    Contextual Info: IRFS640A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax @ VDS = 200V Lower R d^on) : 0.150 i i (Typ.)


    OCR Scan
    irfs640amosfet39irfs640 PDF

    transistor NEC K2500

    Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
    Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales


    Original
    transistor nec k2500nec k2500nec k2500 transistor componentnec k2500 mosfet+6cd4558cq met t3.15a 250vk2500 n-channel mosfetc5042fto-92 78l05 voltage regulator pin configurationi ball 450 watt smps repairing PDF

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Contextual Info: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


    OCR Scan
    ssr3055airfr014airfr024airfr034a+16irfr110airfr120airfr130airfr210airfr220airfr230airf1740irl244irf1740aks 0550irl244airfz34assh6n80airf634airfs750irfs640 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent PDF

    IRFS630A

    Abstract: IRFS634A SSS7N60B SSS2N60B FQPF11P06 FQPF13N10 SSS7N60B equivalent IRFS614B SSS10N60b fqpf16n15
    Contextual Info: Discrete MOSFETs TO-220F RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220F N-Channel FQPF85N06 60 Single 0.01 - - - 86 53 62 FQPF65N06 60 Single 0.016 - - - 48 40 56


    Original
    o-220ffqpf85n06fqpf65n06fqpf55n06+15fqpf50n06fqpf30n06fqpf20n06fqpf13n06fqpf50n06lirfs630airfs634asss7n60bsss2n60bfqpf11p06fqpf13n10sss7n60b equivalentirfs614bsss10n60bfqpf16n15 PDF

    IRFS640A

    Abstract: IRFS640
    Contextual Info: IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    irf640b/irfs640bo-220firfs640bfp001+2irfs640airfs640 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    2n70002n70022sj3772sj378+162sj3802sj4012sj4022sj4072sj4122sj419yta630mtw14p20bss125mtaj30n06hd2sk2837 equivalentsmu10p05smp60n06 replacementste180n10rfh75n05eirfd620 PDF

    sss4n60a

    Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
    Contextual Info: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high


    Original
    irf830airf830bpower247tmsss4n60a+9irfs634airfs630assp4n60airf640bsss7n60airfu210assp7n60airf634birf840a china PDF

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original
    sc70-6ot-23fdr8321lfdr8521l+13fdfs2p106afdfs2p103fdfs2p102ssp6n60airf650irf540 mosfet with maximum vds 12vssp2n60bsss7n60bssr2955irfs630assp4n60asss3n90airf634a PDF

    SSD2104

    Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
    Contextual Info: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040


    OCR Scan
    ssr3055airfr014airfr024airfr034a+16irfr110airfr120airfr130airfr210airfr220airfr230assd2104irfm014ssp80n06irfu210airfi530asss7n60airfu*230asss7n60a 951ssp2n60airf640a PDF

    lm98a

    Abstract: LS98 ERFS640A D697
    Contextual Info: ERFS640A Advanced Power MOSFET FEATURES BVDss “ 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA Max. @ VDS= 200V


    OCR Scan
    erfs640airfs640alm98als98+1d697 PDF