FQPF11P06 Search Results
FQPF11P06 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FQPF11P06 | Fairchild Semiconductor | 60 V P-Channel MOSFET | Original | 660.44KB | 8 |
FQPF11P06 Price and Stock
onsemi FQPF11P06Trans MOSFET P-CH 60V 8.6A 3-Pin(3+Tab) TO-220FP Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQPF11P06 | 15 |
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Fairchild Semiconductor Corporation FQPF11P0660V P-CHANNEL MOSFET Power Field-Effect Transistor, 8.6A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQPF11P06 | 3,500 |
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Get Quote | |||||||
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FQPF11P06 | 42,500 |
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FQPF11P06 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FQPF11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqpf11p0645lopment | |
FQPF11P06Contextual Info: QFET TM FQPF11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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Contextual Info: FQPF11P06 May 2000 QFET TM FQPF11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqpf11p06 | |
FQPF11P06
Abstract: FQPF Series mosfet b4
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fqpf11p06fqpf seriesmosfet b4 | |
FQPF11P06
Abstract: P-CHANNEL MOSFET
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fqpf11p06p-channel mosfet | |
FQPF11P06Contextual Info: QFET TM FQPF11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqpf11p06 | |
thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
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thermistor ksd201irf power mosfets catalogcomplementary mosfets buz11bzx85c6v8 spice model+6 | |
FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
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sc70-6sc75-6supersottm-3/sot-23power247tm+10 | |
FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
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uf4003uf4004uf4005uf4006+16 | |
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
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ao4405ao4407ao4408ao4409+16 | |
IRFS630A
Abstract: IRFS634A SSS7N60B SSS2N60B FQPF11P06 FQPF13N10 SSS7N60B equivalent IRFS614B SSS10N60b fqpf16n15
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o-220ffqpf85n06fqpf65n06fqpf55n06+15 | |
SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
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sc70-6ot-23fdr8321lfdr8521l+13 | |
fairchild mosfet selection guide
Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
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power247tmfairchild mosfet selection guidefqp27p06fqa6n80+7 | |
thermistor KSD201
Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
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ts-16949iso-14001thermistor ksd201pin configuration npn transistor bc548+8 | |
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