2SK2875 Search Results

Contextual Info: 2SK2875-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK2875-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

ET412

Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Contextual Info: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646

SDC40

Contextual Info: 2SK2875-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

2SK2875-01

Abstract: MOSFET 500V 3A MOSFET 500V
Contextual Info: 2SK2875-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 1,5Ω ±6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -

2SK2875-01

Abstract: MOSFET 500V 3A
Contextual Info: 2SK2875-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 1,5Ω ±6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -

2SK2875-01

Abstract: R7080
Contextual Info: 2SK2875-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

Contextual Info: T vd 0 Name Soec. DA TE CHECKED NAME DWG.NO. This malarial and the Information herein li the properly et Fuji El «etri c Co.,Ltd. They aha! be neither reproduced, copi ad, leni, or dltcloted In any way whaltoever for tha ut a of any third parly nor uted for the manufeeturtns purpoft«« without

2SK2652

Abstract: 2SK2771-01R
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT

2SK3102-01R

Abstract: 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type 2SK3340-01 2SK2870-01L, S 2SK2871-01 2SK2872-01MR 2SK2873-01

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

MTP6N60E equivalent

Abstract: buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent BUZ74 equivalent 2SK2645 "cross reference" equivalent buz305 EQUIVALENT irfp22n50a
Contextual Info: Infineon Technologies Cross Reference List CoolMOS CoolMOS Company Product Name VDS [V] IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IRF820 IRF820A IRF820AS IRF820S IRF830A IRF830AS IRF830S IRF840 IRF840A IRF840AS IRF840LCS IRF840S

2sk3337

Abstract: 2sk3102 2SK3264
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type Amps. Amps. 400 23 92 0.2 295 ±30 3.0 TO-247 5.5 450

2SK2645

Abstract: 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879
Contextual Info: Feb-00 VDSS 300 to 600 volts Series Package F-II series FAP-II series T-Pack TO-220AB Drain-source voltage VDSS Voltage 300 450 2SK1007(5, 1.6) 2SK2523(9, 1.0) TO-220F15 2SK2469(5, 1.0) 2SK1006(5, 1.6) 2SK2470(10, 0.53) 2SK2524(9, 1.0) TO-3P 2SK2471(10, 0.53) 2SK2525(9, 1.0)

2SK2771-01R

Abstract: 2sk2761 2SK2082
Contextual Info: 7 -M OSFET / Power MOSFETs J |^ j FAP-IIA ÿ ' J - X » 5£ FAP-IIA series Continued VBBS to (pulse) lo Device type Volte 2SK1983-01 2SK2029-01L, S 2SK1984-01MR 2SK1942-01 2SK2224-01R 2SK1945-01L, S 2SK1943-01 2SK1985-01MR 2SK1944-01 2SK2272-01R 2SK2082-01

2SK2642-01MR

Abstract: 2SK2652 2SK2876-01MR
Contextual Info: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type 2SK2872-01MR 2SK2870-01L.S Maximum Ratinas I d A Pd (W) Voss (V) 450 8 30 450 8 50 8 450 50 Cha •acteristics (IVax.) Package