IRF830S Search Results

9571

Abstract: AN609 IRF830S SiHF830S
Contextual Info: IRF830S_RC, SiHF830S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRF830S A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 1 .5 0 . ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology LO Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

SMD-220

Contextual Info: PD - 95542 IRF830SPbF • Lead-Free SMD-220 www.irf.com 1 7/21/04 IRF830SPbF 2 www.irf.com IRF830SPbF www.irf.com 3 IRF830SPbF 4 www.irf.com IRF830SPbF www.irf.com 5 IRF830SPbF 6 www.irf.com IRF830SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations

SMD-220

Contextual Info: PD - 95542 IRF830SPbF • Lead-Free SMD-220 Document Number: 91064 7/21/04 www.vishay.com 1 IRF830SPbF Document Number: 91064 www.vishay.com 2 IRF830SPbF Document Number: 91064 www.vishay.com 3 IRF830SPbF Document Number: 91064 www.vishay.com 4 IRF830SPbF

smd marking 634

Abstract: smd cod SMD-220 smd marking AL
Contextual Info: PD - 95542 IRF830SPbF • Lead-Free SMD-220 1 IRF830SPbF 2 IRF830SPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT COD E 8 0 24 AS S E M B L E D O N W W 0 2 , 2 0 0 0

Contextual Info: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

Contextual Info: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Surface Mount VDS V 500 RDS(on) (Ω) 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Available • Available in Tape and Reel VGS = 10 V RoHS* • Dynamic dV/dt Rating

Contextual Info: PD - 95542 IRF830SPbF • Lead-Free SMD-220 Document Number: 91064 7/21/04 www.vishay.com 1 IRF830SPbF Document Number: 91064 www.vishay.com 2 IRF830SPbF Document Number: 91064 www.vishay.com 3 IRF830SPbF Document Number: 91064 www.vishay.com 4 IRF830SPbF

Contextual Info: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

Contextual Info: IRF830S A d van ced Power MOSFET FEATURES B ^D S S 500 V - ♦ Avalanche Rugged Technology 1.5Q ^ D S o n = ♦ Rugged Gate Oxide Technology LO Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V

Contextual Info: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

MTP6N60E equivalent

Abstract: buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent BUZ74 equivalent 2SK2645 "cross reference" equivalent buz305 EQUIVALENT irfp22n50a
Contextual Info: Infineon Technologies Cross Reference List CoolMOS CoolMOS Company Product Name VDS [V] IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IRF820 IRF820A IRF820AS IRF820S IRF830A IRF830AS IRF830S IRF840 IRF840A IRF840AS IRF840LCS IRF840S

IRF830S

Contextual Info: IRF830S A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 4 .5 A lD = ♦ Improved Gate Charge 1 .5 Î 2 ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

Contextual Info: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Surface Mount VDS V 500 RDS(on) (Ω) 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Available • Available in Tape and Reel VGS = 10 V RoHS* • Dynamic dV/dt Rating

Contextual Info: IRF830S, SiHF830S, IRF830L, SiHF830L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single D D2PAK (TO-263)

Contextual Info: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

irf830s application notes

Abstract: IRF830S
Contextual Info: $GYDQFHG 3RZHU 026 7 IRF830S FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.5Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 4.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

irf830s application notes

Abstract: IRF830S SiHF830S SiHF830S-E3
Contextual Info: IRF830S, SiHF830S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single D2PAK (TO-263) G S Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

Contextual Info: IRF830S, SiHF830S FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements

Contextual Info: PD-9.1012 In tern atio n al io r R e c tifie r IRF830S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

1N2074A

Abstract: h bridge inverter using ir2112 mosfet driver power inverter schematic diagram ir2110 ic 555 timer gate drive scr inverter schematic PWM IR2112 IRF540 LN4148 full bridge ir2110 h bridge irf740 inverter h bridge ir2110 555 igbt driver IR2117
Contextual Info: APPLICATION NOTE AN978 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.