transistor 10mhz 60w
Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf
Contextual Info: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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ugf2106017ghzmrf21060/mrf21060s700ma+830khz2140mhz84mhz10mhztransistor 10mhz 60wugf21060fugf21060pmosfet class ab rf
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UGF21030F
Abstract: UGF21030 UGF21030P 300GP
Contextual Info: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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ugf210302135mhz2145mhzf1-10mhz+910mhz28vspace28vdc350ma2140mhz84mhzugf21030fugf21030p300gp
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Contextual Info: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB
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ugf191251955mhz1965mhzf1-10mhz+310mhz-43dbc1300ma
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PN channel MOSFET 10A
Abstract: Cree Microwave UGF21125
Contextual Info: UGF21125 125W, 2.17GHz, 28V, Broadband RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for W-CDMA, TDMA, CDMA, GSM single and Multi-Carrier power amplifiers in
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ugf2112517ghz2135mhz2145mhz+4f1-10mhz10mhzpn channel mosfet 10acree microwave
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Cree Microwave
Abstract: UGF21060 UGF21060F UGF21060P
Contextual Info: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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ugf2106017ghzmrf21060/mrf21060scree microwave+2ugf21060fugf21060p
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UGF21090
Abstract: UGF21090F UGF21090P 50 watts amplifier 10mhz
Contextual Info: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers
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ugf2109017ghz2135mhz2145mhz+9f1-10mhz10mhz100ain28vdc2140mhz84mhzugf21090fugf21090p50 watts amplifier 10mhz
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UGF19125
Abstract: UGF19125F UGF19125P
Contextual Info: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB
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ugf191251955mhz1965mhzf1-10mhz+710mhz-43dbc1300ma28vdc1960mhzugf19125fugf19125p
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Cree Microwave
Abstract: UGF21090 UGF21090F UGF21090P
Contextual Info: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers
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ugf2109017ghz2135mhz2145mhz+6f1-10mhz10mhz100uthorizedcree microwaveugf21090fugf21090p
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60W POWER AMPLIFIER
Abstract: UGF16060F UGF16060P UPF16060 transistor 10mhz 60w
Contextual Info: UPF16060 60W, 1.66 GHz, 26V Broadband RF Field Effect Transistor Power N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband Commercial and Industrial applications in the frequency band 1626 to 1660 MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA,
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upf1606016qam400khz600khz+6540ma1660mhz60w power amplifierugf16060fugf16060ptransistor 10mhz 60w
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UGF21030F
Abstract: UGF21030 Cree Microwave MRF21030 UGF21030P 21701
Contextual Info: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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ugf210302135mhz2145mhzf1-10mhz+610mhzugf21030fcree microwavemrf21030ugf21030p21701
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50 watts amplifier 10mhz
Abstract: 10mhz mosfet Cree Microwave UGF19125 UGF19125F UGF19125P
Contextual Info: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB
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ugf19125mrf19125/mrf19125s50 watts amplifier 10mhz10mhz mosfet+3cree microwaveugf19125fugf19125p
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UGF21045F
Contextual Info: UGF21045 45W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. It’s ideally suitable for CDMA, W-CDMA, GSM,TDMA and Multi-Carrier power amplifiers in
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