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    UGF21030F Datasheets (1)

    Cree
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    UGF21030F
    		Cree FET Transistor, 30W, 2.1GHz, 28V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 168.35KB 6

    UGF21030F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    UGF21030F

    Abstract: UGF21030 UGF21030P 300GP
    Contextual Info: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		ugf210302135mhz2145mhzf1-10mhz+910mhz28vspace28vdc350ma2140mhz84mhzugf21030fugf21030p300gp PDF

    UGF21030F

    Abstract: UGF21030 Cree Microwave MRF21030 UGF21030P 21701
    Contextual Info: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		ugf210302135mhz2145mhzf1-10mhz+610mhzugf21030fcree microwavemrf21030ugf21030p21701 PDF