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    MRF21030 Search Results

    MRF21030 Datasheets (14)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MRF21030
    Freescale Semiconductor MRF21030LR3, MRF21030LSR3 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFETs Original PDF 588.93KB 8
    MRF21030
    Motorola MRF21030, MRF21030S 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFETs Original PDF 150.37KB 8
    MRF21030D
    Motorola RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS Original PDF 380.76KB 8
    MRF21030LR3
    Freescale Semiconductor 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET Original PDF 588.92KB 8
    MRF21030LR3
    Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-400 Original PDF 9
    MRF21030LR5
    Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-400 Original PDF 9
    MRF21030LSR3
    Freescale Semiconductor 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET Original PDF 588.92KB 8
    MRF21030R3
    Freescale Semiconductor 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET Original PDF 588.92KB 8
    MRF21030R3
    Motorola RF Power Field Effect Transistor Original PDF 429.24KB 8
    MRF21030R3
    Motorola RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS Original PDF 380.76KB 8
    MRF21030S
    Freescale Semiconductor FET, Enhancement, N Channel, 2 VThreshold Original PDF 588.93KB 8
    MRF21030SR3
    Freescale Semiconductor 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET Original PDF 588.92KB 8
    MRF21030SR3
    Motorola RF Power Field Effect Transistor Original PDF 429.24KB 8
    MRF21030SR3
    Motorola RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS Original PDF 380.76KB 8
    SF Impression Pixel

    MRF21030 Price and Stock

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    Freescale Semiconductor MRF21030L

    High Reliability RF FET IC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MRF21030L 4
    • 1 -
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    Motorola Semiconductor Products MRF21030S

    TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MRF21030S 11
    • 1 $50.70
    • 10 $50.70
    • 100 $48.75
    • 1000 $48.75
    • 10000 $48.75
    Buy Now

    Motorola Semiconductor Products MRF21030

    N-CHANNEL ENHANCEMENT-MODE LATERAL RF POWER MOSFET RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MRF21030 25
    • 1 -
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    NXP Semiconductors MRF21030LR3

    RF Power Field-Effect Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian MRF21030LR3 5,282
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    MRF21030 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MRF21030

    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21030-1 Rev. 13, 10/2008 RF Power Field Effect Transistor Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    mrf21030--1mrf21030lsr3mrf21030 PDF

    motorola MRF

    Abstract: Motorola transistors MRF 470 MRF21030
    Contextual Info: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030R3 MRF21030S MRF21030SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original
    mrf21030/dmrf21030mrf21030r3mrf21030s+3mrf21030sr3motorola mrfmotorola transistors mrf 470 PDF

    250 watts amplifier schematic diagram

    Abstract: NI-400 Motorola transistors MRF MRF21030S MRF21030
    Contextual Info: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030R3 MRF21030S MRF21030SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original
    mrf21030/dmrf21030mrf21030r3mrf21030s+4mrf21030sr3250 watts amplifier schematic diagramni-400motorola transistors mrf PDF

    MRF21030

    Abstract: 150 watts power amplifier layout T 2140 zo 405 400S MRF21030LR3 MRF21030LSR3
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21030 Rev. 12, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21030LR3 MRF21030LSR3 Designed for PCN and PCS base station applications with frequencies from


    Original
    mrf21030mrf21030lr3mrf21030lsr3150 watts power amplifier layout+3t 2140zo 405400s PDF

    MRF21030LR3

    Contextual Info: Freescale Semiconductor Technical Data Rev. 11, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21030LR3 MRF21030LSR3 Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    mrf21030lr3mrf21030lsr3 PDF

    TLX8-0300

    Abstract: 250 watts amplifier schematic diagram MRF21030 MRF21030S gps transmitter circuit diagram 100 watts amplifier circuit diagram
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    mrf21030mrf21030stlx8-0300250 watts amplifier schematic diagram+2gps transmitter circuit diagram100 watts amplifier circuit diagram PDF

    MRF21030

    Abstract: 400S MRF21030LR3 MRF21030LSR3
    Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030LR3 MRF21030LSR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs


    Original
    mrf21030/dmrf21030lr3mrf21030lsr3mrf21030+1400s PDF

    MRF21030

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030R3 MRF21030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    mrf21030r3mrf21030sr3mrf21030 PDF

    Motorola transistors MRF 470

    Abstract: motorola mrf MRF21030
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030R3 MRF21030S MRF21030SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    mrf21030mrf21030r3mrf21030smrf21030sr3+2motorola transistors mrf 470motorola mrf PDF

    MRF21030

    Contextual Info: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030R3 MRF21030LR3 MRF21030SR3 MRF21030LSR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original
    mrf21030/dmrf21030r3mrf21030lr3mrf21030sr3+2mrf21030lsr3mrf21030 PDF

    MRF21030

    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21030 Rev. 12, 5/2006 RF Power Field Effect Transistors MRF21030LR3 MRF21030LSR3 Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    mrf21030mrf21030lr3mrf21030lsr3 PDF

    MRF21030

    Contextual Info: Freescale Semiconductor Technical Data MRF21030 Rev. 11, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21030LR3 MRF21030LSR3 Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    mrf21030mrf21030lr3mrf21030lsr3 PDF

    MRF21030D

    Abstract: TLX8-0300 MRF21030
    Contextual Info: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original
    mrf21030/dmrf21030mrf21030smrf21030d+1tlx8-0300 PDF

    Motorola transistors MRF 470

    Abstract: motorola mrf TLX8-0300 MRF21030 400S MRF21030R3 MRF21030SR3 Motorola transistors MRF
    Contextual Info: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030R3 MRF21030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original
    mrf21030/dmrf21030r3mrf21030sr3motorola transistors mrf 470+5motorola mrftlx8-0300mrf21030400smotorola transistors mrf PDF

    Motorola transistors MRF 470

    Abstract: MRF MOSFET MRF21030 MRF FM amplifier 400S MRF21030R3 MRF21030SR3
    Contextual Info: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030R3 MRF21030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original
    mrf21030/dmrf21030r3mrf21030sr3motorola transistors mrf 470+4mrf mosfetmrf21030mrf fm amplifier400s PDF

    MRF21030

    Contextual Info: Freescale Semiconductor Technical Data MRF21030 Rev. 11, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21030LR3 MRF21030LSR3 Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    mrf21030mrf21030lr3mrf21030lsr3 PDF

    MRF21030L

    Abstract: MRF21030
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21030 Rev. 12, 5/2006 RF Power Field Effect Transistors MRF21030LR3 MRF21030LSR3 Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    mrf21030mrf21030lr3mrf21030lsr3mrf21030l PDF

    UGF21030F

    Abstract: UGF21030 UGF21030P 300GP
    Contextual Info: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original
    ugf210302135mhz2145mhzf1-10mhz+910mhz28vspace28vdc350ma2140mhz84mhzugf21030fugf21030p300gp PDF

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Contextual Info: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一,展示了我们恩智浦半导体 (NXP


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    tff1007hntff11070hntff11073hntff11077hn+16tff11080hntff11084hntff11088hntff11092hntff11096hntff11101hnbfg591 amplifier5.8ghz analog rf mmicmrf6vp3450nxp standard marking blf6g21-10gfet 2n5459rf lnb c band chipsetradar 77 ghz sige82 sot363-6dect antennasmd code marking ft sot23 PDF

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Contextual Info: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


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    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Contextual Info: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


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    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


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    dl110/d2a258 transistorfuji electric tv schematic diagramsmd transistor wb3+7vhf fm pll schematic mc145152motorola transistor smd marking codesmark 176 sot363 rfnote ar164, motorola rf device data, volume ii, dtip off 0401 mosfet transistorcordless phone transceiver icsemiconductors cross index PDF

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


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    tff1007hntff11070hntff11073hntff11077hn+16tff11080hntff11084hntff11088hntff11092hntff11096hntff11101hnvery simple walkie talkie circuit diagramblf278 modelswalkie talkie circuit diagramsimple walkie talkie circuit diagramsige hbt gain block mmic amplifier n6bf245c spice modelsmd transistor code marking 8kmobile jammer gsm 1800 mhzbss83 spice modelsmd transistor code marking 7k sot23 PDF

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Contextual Info: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


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    rf2010567sigejesd204a-dacadcjesd204a-+15aec100bfr90bfq33tff1004hnjesd204ablf578filter for gps spicediode smd marking buf gp 750blf7g10-300pax 2008 lqfp48gp 809 diodebf1118mpal2731m15bgu7051bb 505 varicap diode PDF