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UGF21030 Datasheets (3)

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Cree

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
UGF21030		Cree	LDMOS FETs in Class AB Operation 2.1 GHz Cellular	Original	PDF	213.12KB	8
UGF21030F		Cree	FET Transistor, 30W, 2.1GHz, 28V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	168.35KB	6
UGF21030P		Cree	FET Transistor, 30W, 2.1GHz, 28V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	168.35KB	6

UGF21030 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
UGF21030F Abstract: UGF21030 UGF21030P 300GP Contextual Info: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class	Original	ugf21030 2135mhz 2145mhz f1-10mhz +910mhz 28vspace 28vdc 350ma 2140mhz 84mhz ugf21030f ugf21030p 300gp	PDF
UGF21030F Abstract: UGF21030 Cree Microwave MRF21030 UGF21030P 21701 Contextual Info: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class	Original	ugf21030 2135mhz 2145mhz f1-10mhz +610mhz ugf21030f cree microwave mrf21030 ugf21030p 21701	PDF
Anaren Microwave Abstract: microwave office Curtice UGF21030 high power fet amplifier schematic fet curtice 063700 teflon s-parameter Contextual Info: Design of a High Power Doherty Amplifier Using a New Large Signal LDMOS FET Model Simon M. Wood Cree Microwave Inc. simon_wood@cree.com Abstract There have been a number of papers written recently on the use of the Doherty amplifier technique at microwave frequencies. These have been	Original	anaren microwave microwave office curtice ugf21030 +4high power fet amplifier schematic fet curtice 063700 teflon s-parameter	PDF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	blf1043 upf1010 blf3g21-30 upf1030 +14ugf09030 blf1046 ugf09045 ugf09060 blf4g10-120 semiconductors cross reference ugf18030 cw 180 ugf16085 upf14060 transistors cross reference list blc5g22-100 ugf25025 blf4g20-110b	PDF