2135MHZ Search Results

Contextual Info: STB7102 0.9/2.1 GHz UHF LO BUFFER AMPLIFIER • OPERATING FREQUENCY 990-2135MHz • LOW CURRENT CONSUMPTION • EXCELLENT ISOLATION • ULTRA MINIATURE SOT323-6L PACKAGE SOT323-6L SC70 APPLICATIONS • BUFFER AMPLIFIER FOR 0.9/2.1 GHz APPLICATIONS ORDER CODE

single chip satellite multiswitch

Abstract: diseqc master diseqc schematic diagram receiver satellite schematic diagram receiver data circuit satellite MultiSwitch sat MAX12005 DISEQC SWITCH MAX12005ETM DISEQC SWITCH DATASHEET
Contextual Info: 19-5554; Rev 0; 9/10 TION KIT EVALUA BLE AVAILA Satellite IF Switch Features The MAX12005 satellite IF switch IC is designed for multi-user applications supporting two quad universal low-noise blocks LNBs to be matrix switched to four satellite receivers. The system can be easily expanded

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4460-xx-xnnnS Series HUW0424131-01C August 9, 2006 Preliminary Specification of 1.51µm-1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4460-xx-xnnnS Series

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx Series HUW0424129-01B August 10, 2006 Preliminary Specification of 1.55µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx Series RoHS Compliant Page 1 of 7

schematic diagram receiver data circuit satellite

Abstract: DISEQC SWITCH single chip satellite multiswitch diseqc schematic diagram receiver satellite diseqc master MultiSwitch sat lnb power step up ic 0x06 sat receiver
Contextual Info: 19-5554; Rev 1; 10/11 TION KIT EVALUA BLE AVAILA Satellite IF Switch Features The MAX12005 satellite IF switch IC is designed for multi-user applications supporting two quad universal low-noise blocks LNBs to be matrix switched to four satellite receivers. The system can be easily expanded

transistor 10mhz 60w

Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf
Contextual Info: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class

UGF21030F

Abstract: UGF21030 UGF21030P 300GP
Contextual Info: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class

Tuneable PCB Antenna 900

Abstract: meander folded antenna RF pcb antenna for GSM meander line PCB helix antenna planar inverted f antenna
Contextual Info: PA.25 Antenna Integration Application Note Version 2 CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. BASICS APPLICATIONS GROUND PLANE EFFECTS IMPEDANCE BANDWIDTH VSWR GAIN EFFICIENCY POLARIZATION ADVANTAGES MOUNTING ENVIRONMENTAL CONSIDERATIONS

tunable antenna

Abstract: planar inverted f antenna meander folded antenna meander line meander antenna design 1820MHz
Contextual Info: the antenna solutions provider PA-25 Antenna Integration Application Note Version 2 CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. BASICS APPLICATIONS GROUND PLANE EFFECTS IMPEDANCE BANDWIDTH VSWR GAIN EFFICIENCY POLARIZATION ADVANTAGES MOUNTING

Contextual Info: Anam PA.25a Speciication Part No. PA.25a Product Name Anam Hexa-Band Cellular SMD Antenna GSM / CDMA / DCS / PCS / WCDMA /UMTS /HSDPA / GPRS / EDGE 800 MHz to 2200 MHz Feature High Eficiency Multi-Band SMD Antenna 35*5*6mm RoHS Compliant SPE-11-8-061/G | page 1 of 21

PN channel MOSFET 10A

Abstract: Cree Microwave UGF21125
Contextual Info: UGF21125 125W, 2.17GHz, 28V, Broadband RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for W-CDMA, TDMA, CDMA, GSM single and Multi-Carrier power amplifiers in

Cree Microwave

Abstract: UGF21060 UGF21060F UGF21060P
Contextual Info: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class

GRM39

Abstract: 1895 ic CRG16G HK1608 NJG1553F
Contextual Info: NJG1553F 1.5GHz/1.9GHz 帯用ミキサーGaAs MMIC •概要 NJG1553F は低歪み、高変換利得、低雑音を特徴 とし、1.5GHz/1.9GHz 帯ディジタル携帯電話／PHS を 主用途としたローカルアンプ内蔵ミキサーIC です｡

CRG16G

Abstract: GRM39 HK1608 NJG1553F
Contextual Info: NJG1553F 1.5GHz/1.9GHz MIXER GaAs MMIC nGENERAL DESCRIPTION nPACKAGE OUTLINE NJG1553F is a mixer GaAs MMIC featured low distortion, high conversion gain and low noise figure. This mixer includes a local amplifier, and ideally suitable for 1.5/1.9Hz band digital mobile phone and PHS handsets.

Contextual Info: Frequency Synthesizer 50Ω KSN-2170A-119+ 2110 to 2160 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK1042 Product Overview The KSN-2170A-119+ is a Frequency Synthesizer, designed to operate from 2110 to 2160

sumitomo connectors

Abstract: HUW0724101-01A
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4270-xx/RH2 Series HUW0724101-01A December 28, 2007 Technical Specification of 1.31µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4270-xx/RH2 Series RoHS Compliant

UGF21090

Abstract: UGF21090F UGF21090P 50 watts amplifier 10mhz
Contextual Info: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx-xnnnx Series HUW0424128-01A November 4, 2004 Preliminary Specification of 1.29µm-1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx-xnnnx Series

PA25A

Abstract: antenna CDMA GPRS gsm short whip 1820MHz gsm module 1145MHz helix antenna PA-25
Contextual Info: Specification Model No. : PA.25 Anam Part No. : PA.25a Product Name : Features Hexa-Band Cellular SMD Antenna GSM / CDMA / DCS / PCS / WCDMA / UMTS /HSDPA / GPRS / EDGE 800 MHz to 2200 MHz : High Efficiency Multi-Band SMD Antenna 35*6*5mm RoHS  Photo Version

3G HSDPA

Abstract: MLK1005S15NIT PA25 antenna CDMA GPRS 1340MHz PA25A pa-25 taoglas
Contextual Info: Specification Model No. : PA.25 Anam Part No. : PA.25a Product Name : Hexa-Band Cellular SMT antenna GSM / CDMA / DCS / PCS / WCDMA / UMTS /HSDPA / GPRS / EDGE Features : High Efficiency Multi-Band SMD Antenna 35*6*5mm RoHS  Measurements on above 110*40mm ground plane EVB

Microwave Transmission applications

Abstract: ExceLight Communications HUW0724174-01A SLW4470 ALUMINIUM CLADDING
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx/RH2 Series HUW0724174-01A March 3, 2008 Technical Specification of 1.55µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx/RH2 Series RoHS Compliant

Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx Series HUW0424129-01A November 4, 2004 Preliminary Specification of 1.55µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx Series Page 1 of 7 Sumitomo Electric Industries, Ltd.

Cree Microwave

Abstract: UGF21090 UGF21090F UGF21090P
Contextual Info: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers

CRG16G

Abstract: GRM39 HK1608 NJG1552F
Contextual Info: NJG1552F 1.5GHz/1.9GHz 帯用ミキサーGaAs MMIC •概要 NJG1552F は低消費電力、高変換利得、低雑音を 特徴とし、1.5GHz/1.9GHz 帯ディジタル携帯電 話端末/PHS 端末を主用途としたローカルアンプ 内蔵ミキサーIC です｡