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    UGF21060 Search Results

    UGF21060 Datasheets (4)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    UGF21060
    Cree 60W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Original PDF 140.9KB 3
    UGF21060
    Cree LDMOS FETs in Class AB Operation 2.1 GHz Cellular Original PDF 243.43KB 8
    UGF21060F
    Cree FET Transistor, 60W, 2.17GHz, 28V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 180.19KB 6
    UGF21060P
    Cree FET Transistor, 60W, 2.17GHz, 28V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 180.19KB 6

    UGF21060 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor 10mhz 60w

    Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf
    Contextual Info: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original
    UGF21060 17GHz, MRF21060/MRF21060S. 700mA 30kHz 2140MHz 84MHz 10MHz UGF21060 transistor 10mhz 60w UGF21060F UGF21060P mosfet class ab rf PDF

    Cree Microwave

    Abstract: UGF21060 UGF21060F UGF21060P
    Contextual Info: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original
    UGF21060 17GHz, MRF21060/MRF21060S. UGF21060 Cree Microwave UGF21060F UGF21060P PDF

    ultrarf

    Abstract: 30WPEP MRF21060 UGF21060 16DPCH
    Contextual Info: UGF21060 60W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 2.11 to 2.17 GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original
    UGF21060 MRF21060 700mA) ultrarf 30WPEP MRF21060 UGF21060 16DPCH PDF

    semiconductors cross reference

    Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
    Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30


    Original
    BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b PDF