30WPEP Search Results

Contextual Info: VRF148A PRELIMINARY 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

200 watt hf mosfet

Abstract: 5 watt hf mosfet 0809LD30P
Contextual Info: R.0.2P.991602-BEHRE 0809LD30P 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION CASE OUTLINE 55QU Common Source The 0809LD30P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The

VK200 FERRITE

Abstract: 22 J.63 capacitor vk-200 ferrite choke VK-200 M142 SD4017
Contextual Info: SD4017 RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS . . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION POUT = 30 W MIN. WITH 7.5 dB GAIN

VK200 ferrite

Abstract: 22 J.63 capacitor e35r SD4017 vk-200 ferrite choke J.63 capacitor M142 VK-200 120142 8569
Contextual Info: SD4017 RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS . . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION POUT = 30 W MIN. WITH 7.5 dB GAIN

MRF148A

Abstract: 2204B M113 VRF148A 10WPEP 300WPEP 92010 647s
Contextual Info: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

MRF148A

Contextual Info: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

0809LD30

Abstract: 55QT 200 watt hf mosfet R02P
Contextual Info: R.0.2P.991602-BEHRE 0809LD30 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION CASE OUTLINE 55QT Common Source The 0809LD30 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The

VRF148A

Abstract: 2204B M113 MRF148A 647s
Contextual Info: VRF148A 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF148A G VRF148AMP(G) 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: <£e.mi-dond\jLcko\ Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistor MRF148 N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and