16DPCH Search Results

Contextual Info: RF Power Field Effect Transistor LDMOS, 2110—2170 MHz, 2W, 28V 7/9/04 MAPLST2122-002PP Preliminary Features Q Q Q Q Q Package Style Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase

TRANSISTOR Z4

Abstract: CHIP TRANSISTOR omni spectra capacitor 15 F 50 VDC ATC100A MAPLST0822-002PP RO4350 640457-4 RF transistor gain 20dB
Contextual Info: RF Power Field Effect Transistor LDMOS, 800—2200 MHz, 2W, 28V 4/14/05 MAPLST0822-002PP Preliminary Features Package Style Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase

Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 125 Watts, 2110-2170 MHz PTF 102093* Description Key Features The PTF 102093 is a 125–watt, GOLDMOS FET intended for WCDMA applications. The device is characterized for single and two carrier WCDMA operation in the 2110 to 2170 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

6413A

Abstract: scrambling code uplink Scrambling code Racal Instruments node b 6413A Infinite Power Solutions TAG 8706 3/TDA+9650
Contextual Info: Commercial in Confidence Testing UMTS Node B’s using the Racal Instruments Wireless Solutions 6413A. Number: AN05/0006 Product: 6413A Issued: 13 April 2005 Version: 1.2 Distribution: All Summary This application note is intended to be a guide to testing a UMTS Node B using 6413A.

ultrarf

Abstract: 30WPEP MRF21060 UGF21060 16DPCH
Contextual Info: UGF21060 60W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 2.11 to 2.17 GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier