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    UGF19125F Search Results

    UGF19125F Datasheets (1)

    Cree
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    UGF19125F
    Cree FET Transistor, 125W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 170.09KB 6

    UGF19125F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original
    ugf191251955mhz1965mhzf1-10mhz+310mhz-43dbc1300ma PDF

    UGF19125

    Abstract: UGF19125F UGF19125P
    Contextual Info: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original
    ugf191251955mhz1965mhzf1-10mhz+710mhz-43dbc1300ma28vdc1960mhzugf19125fugf19125p PDF

    50 watts amplifier 10mhz

    Abstract: 10mhz mosfet Cree Microwave UGF19125 UGF19125F UGF19125P
    Contextual Info: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original
    ugf19125mrf19125/mrf19125s50 watts amplifier 10mhz10mhz mosfet+3cree microwaveugf19125fugf19125p PDF