Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UGF19125 Search Results

    UGF19125 Datasheets (3)

    Cree
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    UGF19125
    Cree LDMOS FETs in Class AB Operation 1900 MHz Cellular Original PDF 451.04KB 8
    UGF19125F
    Cree FET Transistor, 125W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 170.09KB 6
    UGF19125P
    Cree FET Transistor, 125W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF 170.09KB 6

    UGF19125 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original
    ugf191251955mhz1965mhzf1-10mhz+310mhz-43dbc1300ma PDF

    UGF19125

    Abstract: UGF19125F UGF19125P
    Contextual Info: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original
    ugf191251955mhz1965mhzf1-10mhz+710mhz-43dbc1300ma28vdc1960mhzugf19125fugf19125p PDF

    50 watts amplifier 10mhz

    Abstract: 10mhz mosfet Cree Microwave UGF19125 UGF19125F UGF19125P
    Contextual Info: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original
    ugf19125mrf19125/mrf19125s50 watts amplifier 10mhz10mhz mosfet+3cree microwaveugf19125fugf19125p PDF

    semiconductors cross reference

    Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
    Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30


    Original
    blf1043upf1010blf3g21-30upf1030+14ugf09030blf1046ugf09045ugf09060blf4g10-120semiconductors cross referenceugf18030cw 180ugf16085upf14060transistors cross reference listblc5g22-100ugf25025blf4g20-110b PDF