ta 8659 anG
Abstract: EFA120B EFA120BV TA 8659
Contextual Info: Excelics EFA120B/EFA120BV DATA SHEET Low Distortion GaAs Power FET 550 • • • • • • • +28.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EFA120B AND 11.5dB FOR EFA120BV AT 12GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EFA120B-100F
Contextual Info: Excelics EFA120B-100F DATA SHEET Low Distortion GaAs Power FET ' 7<3 P1dB G1dB PAE PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss
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ta 8659 anG
Abstract: EFA120B EFA120BV
Contextual Info: EFA120B/EFA120BV Low Distortion GaAs Power FET 550 FEATURES 50 • • • • • • • +28.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EFA120B AND 11.5dB FOR EFA120BV AT 12GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EFA120B-100F
Abstract: O43C
Contextual Info: EFA120B-100F Low Distortion GaAs Power FET UPDATED 11/04/2005 FEATURES • • • • • • Hermetic 100mil Ceramic Flange Package +28.0 dBm Typical Output Power 9.0 dB Typical Power Gain at 8GHz 0.3 x 1200 Micron Recessed “Mushroom” Gate Si3N4 Passivation
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EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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b1415
Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
Contextual Info: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs
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rtc/5/01/psintro24-hour200oc275oc+10b1415gaas fet cross referencegaas fet 70 mil micro-x packagepower fet 70 mil micro-x packageepa240bvn5 micro-x packageepa060b-70mixer ema0.5w ,gaas fetepa480c-sot89
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Curtice
Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
Contextual Info: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE
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EPA018A
Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the
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