DQ141 Search Results

Contextual Info: Preliminary W29L102 64K X 16 CMOS FLASH MEMORY G ENERAL DESCRIPTION The W29L102 is a 1-megabit, 3.3-volt only CMOS tlash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt Vpp is

DQ111

Abstract: DQ139 DQ131
Contextual Info: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply

Contextual Info: PIC14000 M ic r o c h ip 28-Pin Programmable Mixed Signal Controller PACKAGE TYPES FEATURES High-Performance RISC-like CPU core PDIP, SOIC, SSOP, Windowed CERDIP • Based on PIC16C74 microcontroller • Only 35 single word instructions to learn • All single cycle instructions except for program

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

DQ141

Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)

J32CG

Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
Contextual Info: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0

BQ37

Abstract: 1JB41
Contextual Info: INTEGRATE] DEVICE t>ÖE ]> • 4A2S771 0014CH? 0 T3 ■ IDT7024S/L HIGH-SPEED 4 K x 16 DUAL-PORT STATIC RAM In te g ra te d D e v ic e T e c h n o lo g y , Inc. FEATURES: more than one device • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave

Contextual Info: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8

TOP SIDE MARKING OF MICRON

Abstract: 48-PIN MT28F004B3 MT28F400B3
Contextual Info: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):

DQ2060

Abstract: DC1065 EB285 EBSA-285 R164 SA110 B20B20 A59A59 CPU-A13 CPUD22
Contextual Info: A B C D COPYRIGHT C 8 1997 DIGITAL EQUIPMENT CORPORATION 8 16 17 18 19 20 21 sht sht sht sht sht sht 7 CHK CHANGE NO. REV CPU, CPU_, a Block Address X-Bus XBUF_, have PCI +3V Stand - +2V, - - - TAG_,RST_ - - 6 bidirects this 5 is Debug Port their Serial Spare

MT28F004B5

Abstract: MT28F400B5
Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 5 technology (B5):

N6796

Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)

D2119

Abstract: MB84VD2118XA 0A0000H
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM M B 8 4 V D 2 1 18XA -35/M B84VD 2119XA-85 FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance

MT28F004B3

Abstract: MT28F400B3
Contextual Info: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V ONLY, DUAL SUPPLY SMART 3 Features • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):

Contextual Info: O K I Semiconductor MSM5 4 3 2 126/8 _ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5432126/8 is a new generation G raphic D R A M organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM5432126/8 is O K I's C M O S silicon gate

MT28F400B5SP

Abstract: MT28F400B5WP-8 T MT28F400B5SG-8BET MT28F400B5SP8 MT28F400B5WP 44-PIN MT28F004B5 MT28F400B5 MT28F400B5WP-8
Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 5 technology (B5):

48-PIN

Abstract: MT28F004B5 MT28F400B5
Contextual Info: PRELIMINARY‡ 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.18µm Process Technology FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

48-PIN

Abstract: MT28F004B3 MT28F400B3
Contextual Info: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):

CPU-A13

Abstract: EB285 EBSA-285 SA110 ad15 B17B17 A54A CPUD22 DQ511 DC1065
Contextual Info: 8 7 6 5 EBSA-285 SHEET SIG 4 Schematic PREFIXES 3 2 1 BAN#=EB285 21285 REV#=REVAX04 Directory EVALUATION BOARD DESCRIPTION D D C sht 1 - Schematic sht 2 - Block sht 3 CPU_, sht 4 XBUS_ Debug pick-up sht 5 FBG_,PCI_ 21285 ’Footbridge’ sht 6 BUF_ sht 7

09005aef8114a789

Abstract: MT28F004B3 MT28F400B3
Contextual Info: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V ONLY, DUAL SUPPLY SMART 3 Features • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):

Contextual Info: f T DG133/134/141 Dual SPST JFET Analog Swiches FEATURES BENEFITS APPLICATIONS • Low Standby Power < 1 p.W • Minimizes Standby Power Requirement • Portable and Battery Powered Systems • Bipolar Drivers • Better Radiation Tolerance • Constant rQS(ON)

MT28F004B5

Abstract: MT28F400B5 Micron 4Mb NOR FLASH MT28F400B5SG-8B
Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.3µm Process Technology FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks

D141G

Abstract: lt 7246 panel-meter toshiba logic tc5053p
Contextual Info: T O S H IB A 9097248 TOSHIBA -CLO G IC/nEH O R Y} L O G IC /M E M O R Y C 2M O S Ï>Ë| Í G T 7 5 4 0 □ □ lM Q 'i? 7 imÍiiÍininiiiiiihiiiiiiiin DIGITAL SILICON TC5053P TC5054P ÖS INTEGRATED TC5053P, CIRCUIT y P MONOLITHIC T U C n D C U i l D 4

MB84VD2108X

Abstract: MB84VD2109X 2SA261 d2109x MCP MEMORY
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/x16) FLASH MEMORY & 2M (x 8/x16) STATIC RAM MB84VD2108X-35/MB84VD2109X-85 FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 85 ns maximum access time