DQ126 Search Results

DN6149

Abstract: DN1047 DN4835 DN8140 900047
Contextual Info: Series Number DN4835 DN6149 DN8140 DN8155 DN1047 DN1058 3003 9th Avenue SW PO Box 50 Watertown, SD 57201 Toll free: 888-978-2638 Ph: 605-886-3326 Fax: 605-886-8995 SMD Unshielded Inductor Series; Part Numbering Sequence: Series Number - ( Suffix Code )(Tolerance), example DQ1260-220M

IR 2638

Abstract: DQ7545 tms 470 980 m 13 560 DQ1260 DQ1280 DQ6530 DQ6545
Contextual Info: Series Number DQ6530 DQ6545 DQ7534 DQ7545 DQ1260 DQ1280 3003 9th Avenue SW PO Box 50 Watertown, SD 57201 Toll free: 888-978-2638 Ph: 605-886-3326 Fax: 605-886-8995 SMD Shielded Base Plate Power Inductor Series; Part Numbering Sequence: Series Number - ( Suffix Code )(Tolerance), example DQ1260-220M

Contextual Info: DALLAS DS1204V Electronic Key s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • Cannot be deciphered by reverse engineering • Partitioned m em ory thwarts pirating DALLAS • User-insertable packaging allows personal posses­ sion DS1204V ELECTRONIC KEY

DQ111

Abstract: DQ139 DQ131
Contextual Info: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply

DQ111

Contextual Info: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

DQ124

Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
Contextual Info: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)

DQ112

Abstract: UG016C14488HSG-6 DQ100 DQ88
Contextual Info: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)

Contextual Info: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8

Contextual Info: DS1204V DALLAS SEMICONDUCTOR FEATURES DS1204V Electronic Key PIN ASSIGNMENT • Cannot be deciphered by reverse engineering • Partitioned m em ory thwarts pirating DALLAS • User-insertable packaging allows personal posses­ sion •% > DS1204V ELECTRONIC KEY

Contextual Info: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8

3 DG 1000

Abstract: D0126 0G141 DG129 DG141 DG152 DG154 DG161 Analog FET Switch IDG140
Contextual Info: O M M L D 0 126, DG129, D 0 133, D G 134, D G 140, DG 141, IDG151, D G 152,D G 153, D G 154 2-Channel D rivers w ith SPST and DPST F ET Sw itches FEATURES GENERAL DESCRIPTION • Each channel com plete—interfaces w ith m ost integrated logic These sw itching circu its contain tw o channels in one pack­

MT18DT8144G

Contextual Info: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM

smart modular

Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
Contextual Info: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line

DS1204V

Abstract: DSA005780
Contextual Info: DS1204V DS1204V Electronic Key FEATURES PIN ASSIGNMENT • Cannot be deciphered by reverse engineering • Partitioned memory thwarts pirating • User-insertable packaging allows personal posses- sion DALLAS DS1204V ELECTRONIC KEY • Exclusive blank keys on request

SiS301

Abstract: bt815 SILICON INTEGRATED SYSTEMS SiS300 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18
Contextual Info: SiS300 2D/3D/Video/DVD Accelerator SiS300 2D/3D/Video/DVD Accelerator Preliminary Rev. 0.3 March 23, 1999 This specification is subject to change without notice. Silicon Integrated Systems Corporation assumes no responsibility for any errors contained herein.

Contextual Info: DS1207 DALLAS s e m ic o n d u c to r DS1207 TimeKey PIN ASSIGNMENT FEATURES • Cannot be deciphered by reverse engineering • Time allotment from one day to 512 days for trial periods, rentals, and leasing DALLAS • Partitioned memory thwarts pirating

Contextual Info: D ALLAS DS1207 TimeKey s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Cannot be deciphered by reverse engineering • Time allotment from one day to 512 days for trial periods, rentals, and leasing DALLAS DS1207 TimeKey • Partitioned memory thwarts pirating

Contextual Info: UG08C14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Fast Page Mode (FPM) operation

tsop 138

Abstract: DQ114
Contextual Info: UG08E14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Hyper Page Mode (EDO) operation

DQ77

Abstract: SMART Modular Technologies SM51441000LP-07 SM51441000LP-08 dram memory module 1993 DQ114
Contextual Info: SM51441000LP January 1993 Rev 0 SMART Modular Technologies SM51441000LP 16MByte 1M x 144 CMOS Low Profile DRAM Module General Description Features The SM51441000LP is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line

code lock circuit flow chart

Abstract: DG384 DS1207
Contextual Info: DS1207 DS1207 TimeKey FEATURES PIN ASSIGNMENT • Cannot be deciphered by reverse engineering • Time allotment from one day to 512 days for trial periods, rentals, and leasing DALLAS DS1207 TimeKey • Partitioned memory thwarts pirating • User-insertable

DU1971

Abstract: DU1971-470M DU6629 DU1330-100M DS6630-470M 220/12 dc/dc DU1330-470M DU1330 436-1067-1-ND DS1976-471M
Contextual Info: Inductors Unshielded Drum Core – DU Series Inductance µH A L W Features: • Drop in replacements for industry prevalent competitor series • High energy storage and low resistance • Ideal for DC-DC buck or boost conversion • Robust temperature deflection to