DIODE 1N3064 Search Results

1N3064

Abstract: DSA0054645.txt
Contextual Info: 1N3064 Ultra Fast Low Capacitance Diode. Working Inverse Voltage 50 V. 1.1125 Diod. Page 1 of 1 Enter Your Part # Home Part Number: 1N3064 Online Store 1N3064 Diodes Ultra Fast Low Capacitance Diode. Working Inverse Transistors Voltage 50 V. Integrated Circuits

Germanium diode

Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Contextual Info: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

Contextual Info: TYPE 1N3064 SILICON SWITCHING DIODE B U L L E T IN N O . D L -S 7 3 9 1 1 4 , S E P T E M B E R 1 9 6 6 - R E V I S E D M A R C H 1 9 7 3 FA ST SWITCHING DIODE • Rugged Double-Plug Construction • Electrically Equivalent to 1N4454 DO-35 and 1N4532 (DO-34)

1N3064

Contextual Info: FEATURES 1N3064 • • • • • 1N3064 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, Sine, 1uS:

Contextual Info: ttSe.mi-Gonducto'L ZPioduat*., Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 FEATURES 1N3064 • • • • • 1N3064 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION

diode 1n4

Abstract: 1N3064 1N3604 IN3064 1N44S 1N4451 1N4454 1N4454-1 UNITRODE DIODE 240
Contextual Info: COMPUTER DIODE JAN & JANTX 1N3064 JAN, JANTX & JANTXV 1N4454 JAN, JANTX & JANTXV 1N4454-1 General Purpose Switching FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/144 • Planar Passivated Chip • DO-7 or DO-35 Package • Non-JAN Available

Contextual Info: 1N3064 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 75 V IF AV Average Rectified Forward Current 300 mA IFSM Non-repetitive Peak Forward Surge Current

1N3064

Contextual Info: 1N3064 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 75 V IF AV Average Rectified Forward Current 300 mA IFSM Non-repetitive Peak Forward Surge Current

1N3206

Abstract: 1N3064M 1n900 MC914 1N3069M 1N3207 1N897 1N902 MC001 MC914A
Contextual Info: 1N897 - 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, / Microsemi Corp. f m SCOTTSDALE, AZ / / F o r m o r e in f o r m a ti o n call: 7I4 979-S220 M C 9lO , M C 910A , The diode experts / SANTA ANA, CA MC001, MC001A, MC002 PELLET DIODES FEATURES

IN3063

Abstract: 1N3064 1N3063 1N306 1n3062 silicon diodes 1N3062
Contextual Info: Datasheet H tm TN3062 1N3063: 1N3064 Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SILICON SWITCHING DIODE JEDEC DO-35 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3062 Series types are very high speed Silicon Switching

in4454

Abstract: 1N3064
Contextual Info: COMPUTER DIODE w m r u I t n l/ iv / u c , ja n & ja n t x 1N3064 1N4454; JAN, JANTX & JANTXV 1N4454 ja n , ja n t x & ja n t x v 1N4454-1 1N4532; JAN, JANTX & JANTXV 1N4532 General Purpose Switching ABSOLUTE MAXIMUM RATINGS, XT 29*C Reverse Breakdown Voltage . 75V

diode D07-15

Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification

PNP Transistor 2N2222 equivalent

Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
Contextual Info: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: Military 54LS42A fc MOTOROLA 1-oMO Decoder MPO inun ELECTRICALLY TESTED PER: MIL-M-38510/30703 The LSTTL/MSI 54LS42A is a multipurpose decoder designed to accept four BCD inputs and provide ten mutually exclusive outputs. The LS42A is fabricated with the Schottky barrier diode process for

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

ROHM 1N3604

Abstract: "TE-11" ROHM ROHM 1N4149 1N3604 ROHM RLS4153 1N4149 1N916 DS06 LL34 RLS4153
Contextual Info: 7 0 2 0 = ^ OOCHGBB TTS RLS41537“ - SEMICONDUCTORS •<*• *•£/; •',?’■I;., LL34 : *> -• ' ■••-. . . ’*"■ ' 1*»•*■•*■ •: '.' -••- . ••% V.'-'-' • '•* LEADLESS SURFACE MOUNTED SILICON SWITCHING DIODE ABSOLUTE MAXIMUM RATINGS: TA = 25°)

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

1N4532

Abstract: 1n4631 IN643 1n662 jantx 1N3064 1N4151 1N4154 1N4534 1N643 1N662
Contextual Info: 1N643; JAN 1N643 1N662; JAN 1N662 1N663; JAN 1N663 COMPUTER DIODE Switching FEATU RES DESCRIPTION • M etallurgical Bond T h is device is particularly suited to a pp licatio ns where m ediu m speed sw itching is required. M oisture free stability is ensured through herm etic

SN7449

Abstract: 54175 SN7401 74L42 SN7437 SN74S40
Contextual Info: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type s listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a