DIODE 1N270 Search Results

Germanium diode

Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Contextual Info: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes

Germanium DO-35 DIODE

Abstract: Germanium Schottky diode 1N270 CDSH270 diode germanium 1n270 DIODE marking 16 schottky diode 1N270 germanium
Contextual Info: CDSH270 SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDSH270 silicon Schottky diode is designed to replace the 1N270 Germanium diode. Some advantages over the 1N270 are lower forward voltage, lower leakage current, faster

Q265

Abstract: diode germanium 1n270 1N695 transitron matched diodes Q252 1N270 1N3066 transitron 1n648 S555G silicon diode and germanium
Contextual Info: MATCHED DIODE QUADS Transitron's efficiency E R - 4 case epoxy encapsulated diode quads feature high silicon or germanium diodes with matched forward charac- teristics. Individual diodes allow the user maximum circuit configurations versatility. TABLE I SILICON DIODE TYPES

diode germanium 1n270

Abstract: 1N270 germanium diode "Germanium diode" 1N270 diode germanium Germanium diode IV germanium diode junction capacitance Detectors - Diode Germanium Diode 1n270 1N270 diode
Contextual Info: E L E C T R O N I C S , INC. 44 FARRAND STREET BLOOMFIELD, NJ 07003 973 748-5089 http ://www. nteinc. com 1N270 Germanium Diode Optimized for Radio Frequency Response Description: The 1N270 is a Germanium Diode in a DO-7 type glass package that can be used in many AM, FM

diode germanium 1n270

Abstract: Germanium DO-35 DIODE 1n270 Germanium Schottky diode 1950S 1N277 CDSH270 Switching diode 50V 200mA 1N270 diode diodes 1n270
Contextual Info: V Datasheet fnV il l~Pf 1 W S llliiS I 1 Semiconductor Corp. CDSH270 SCHOTTKY DIODE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-35 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR CDSH270 is a Silicon Schottky diode specially designed to replace

Contextual Info: 1N270+JAN Diodes Germanium Diode Military/High-RelY I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage100“ I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)200m I(RM) Max.(A) Reverse Current100u @V(R) (V)(Test Condition)50

Contextual Info: 1N277 asi GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. MAXIMUM RATINGS 500 mA p e a k If Vr 110 V P diss 80 mW @ Tc = 25 °C Tj -65 °C to +85 °C T stg -65 °C to +85 °C

diode germanium 1n270

Abstract: 1N277 "Germanium Diode" 1N270 diode
Contextual Info: 1N277 asii GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. MAXIMUM RATINGS 5OO mA If i peak Vr 11O V Pd is s 8O mW @ Te # 25 0C Tj -65 °C to +85 0C Ts t g -65 0C to +85 0C

diode germanium 1n270

Abstract: 1N270 diode 1N270 "Germanium Diode" Germanium Diode 1n270
Contextual Info: 1N270 asii GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. MAXIMUM RATINGS 200 mA If p e a k Vr 100 V Pd is s 80 mW @ Te # 25 °C Tj -65 0C to +85 0C Ts t g -65 0C to +85 0C

diode germanium 1n270

Abstract: 1N270 1N270 diode diode germanium 1n283 diodes 1n270 Germanium Diode 1n270 diode 1N270 1N270 diode germanium 1N277 gold bonded germanium diode 1N270
Contextual Info: Data Sheet 1N270 1N277 1N281 Central' 1N283 GERMANIUM DIODE Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC D0-7 CASE Manufacturers of World Class Discrete Semiconductors The CENTRAL SEMICONDUCTOR INIOOA, 1N270, 1N277, 1N281, 1N283 t y p e s a r e G old Bonded Germaniun

Contextual Info: 1N270 asi GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. 0 .1 0 5 [2 . 6 6 7 ] 0 . 0 1 9 -0 .0 2 1 0 . 4 8 3 -0 . 5 3 3 ] 1.000 [2 5 .4 0 ] MAXIMUM RATINGS 200 If mA p e a k

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N270

Abstract: 1N270 equivalent diode germanium 1n270 1N270 diode equivalent 1N270 diode germanium diode diode 1n270 diode piv 100 500ma "Germanium Diode"
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N270 Features • • • Germanium Diode 100 Volt Low Leakage Current Flat Junction Capacitance High Mechanical Strength Maximum Ratings

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

1N270

Abstract: diode germanium 1n270 "Germanium Diode"
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N270 Features • • • Germanium Diode 100 Volt Low Leakage Current Flat Junction Capacitance High Mechanical Strength

Amperex hl

Contextual Info: AN31 Latch-Up Protection of CMOS ICs This emitter base junction of the parasitic bipolar is the parasitic diode that is also found in power MOSFETs. One of these diodes exists in every CMOS structure for both N- and P-channel devices; correspondingly, there exists a parasitic bipolar for every MOSFET

PHILIPS SCR

Abstract: BYV1030 equivalent 1N270 diode equivalent
Contextual Info: AN763 Latch-Up Protection of CMOS ICs This emitter base junction of the parasitic bipolar is the parasitic diode that is also found in power MOSFETs. One of these diodes exists in every CMOS structure for both N- and P-channel devices; correspondingly, there exists a parasitic bipolar for every MOSFET

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1n45b

Abstract: 1N48 diode T11G T26G IN283 T13G 1N849 DIODE 1N418 IN457A t20g
Contextual Info: 86D 0 0 3 3 5 _ 3 8 6 9 7 2 0 GENERAL DIO D E CORP GENERAL DIODE CORP fit ù 7 D DÎT| 3flfa17BG 0000335 fl J “ GERMANIUM DIODES Case Style — D0-7 TYPE \ \•% % 1N34 1N34A 1N38 1N38 1N3BA 75 75 36 125 125 1.0 1.0 1.0 1.0 1.0 1N38B 1N44 1N45

diode 1N645

Abstract: 1N34 DIODE 1N270 diode 1N34 diodes germanium diode 1N60 1N34
Contextual Info: 3 6 6 ,7 2 0 GENER.L DIODE CORP 3 8 tT O D D00 0 3 t a fl f - <^£micorzclucéoi± _ T e le x 948318 100 Eqmes Street (617 872-7520 Framingham, Massachusetts 01701 Low Current Diodes (DO-7) V RM (r e p ) V o lta V o lt ' GDC645 150 1N645 Type No. I0

xl 1507

Abstract: IN270 1N270 JAN part marking lvb diode germanium 1n270 GE 141L gold bonded germanium diode 1N270 1N270 diode equivalent xl 4016 1N270
Contextual Info: ., i_ I TNcR=mml MI L-S- 195001200B 9 JUNE 1989 u lNG MIL-s-19500/2ooA 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR OEVICE, OIOOE, GERMANIUM TYPE 1N270 JAN, JANTX, ANO JANTXV This specification is ments and Agencies 1. approved of the for use by all DepartDepartment