1N89 Search Results

Contextual Info: 1N89E Rev 07 AUG 2013 Mask Set Errata for Mask 1N89E This document contains errata information for Kinetis Mask Set 1N89E but excludes any information on security-related modules. A nondisclosure agreement NDA is required for any security-related

N3206

Abstract: 1N3206 in 3 N3064M
Contextual Info: 1N897 - 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, MC916, MC916A, MCOOlj MCOOIAj MC002 Microsemi Corp. s c o rra , ^ j For more information call: 714 979-8220 / PELLET DIODES FEATURES • M ic r o m in ia tu r e p a c k a g e . • F a s t re c o v e ry .

1N3206

Abstract: 1N3064M 1n900 MC914 1N3069M 1N3207 1N897 1N902 MC001 MC914A
Contextual Info: 1N897 - 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, / Microsemi Corp. f m SCOTTSDALE, AZ / / F o r m o r e in f o r m a ti o n call: 7I4 979-S220 M C 9lO , M C 910A , The diode experts / SANTA ANA, CA MC001, MC001A, MC002 PELLET DIODES FEATURES

ALL4150

Abstract: 1N4606
Contextual Info: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current

1n89

Abstract: selenium diode diode 032
Contextual Info: 1N89 Germanium Diode 0.32 Diodes Germanium and Selenium Diodes Germanium Dio. Page 1 of 1 Enter Your Part # Home Part Number: 1N89 Online Store 1N89 Diodes Germanium Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics In Stock 330 Brand New Available from $ 0.32

1N89E

Contextual Info: 1N89E Rev. 11 FEB 2013 Mask Set Errata for Mask 1N89E This document contains errata information for Kinetis Mask Set 1N89E but excludes any information on security-related modules. A nondisclosure agreement NDA is required for any security-related

c914

Abstract: c916 1N3206 1n897 MC001A
Contextual Info: 1N897- 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, MC916, MC916A, MC001, MC001A, MC002 SCOTTSDALE, A Z SANTA ANA, CA For m ore inform ation call: 714 979-8220 MICRO-DIODES FE A TU R E S M ic ro m in ia tu re p a c k a g e . F a st r e c o v e ry .

1N5426

Abstract: 1N5208 AMERICAN POWER DEVICES 1n914
Contextual Info: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N3206

Abstract: JAN256 1n900 MC914 1N3064M 1N3069M 1N3207 MC001 MC001A MC914A
Contextual Info: 1 N 8 9 7 - 1N902, 1N3064M, 1N3069M, 1N 3206,1N 3207, MC914 MC914A, MC916, MC916A, MC001, MC001A, M C002 Microsemi Corp. FEA TU RES • • • • • n in n c c Microminiature package. Fast recovery. Hermetically sealed glass package. Stable surface films integrally bonded to the device crystal.

Contextual Info: SWITCHING DIODES 200mW Part# Peak Voltage Continous Reverse Current VI B V 1N914 1N914A 1N914B I r <"A> 100 100 100 @ Forward Voltage VR (V) 5000 @ 5000 @ 5000 @ Capacitance C Maximum Reverse Recovery Time VF (V) @ lF (mA) <PF) V (n S ) 1.0 1.0 1.0 @ @ @

AMERICAN POWER DEVICES 1n914

Abstract: 1N5209 1N3064 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619
Contextual Info: 3541563 FENWAL 83D 00920 E L E C T R O N I C S / APP DE ^ 3 S m S b 3 03 ODQD^BO D I 7 - -j . PLANAR DIODES DO-35 Case Type Peak Inverte Voltage Minimum Forward Current Maximum Capacitance Maximum Reverse Current @ 25*C lr /tA @150*C lr mA ~V T~ V

1Nu5

Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
Contextual Info: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

1N5426

Abstract: 1n5208 1N458B 1N5209 1n890 1N456A
Contextual Info: SWITCHING DIODES 200mW Part* Peak Voltage Continous Reverse Current L NA V <V> R W 1N914 1N914A 1N914B 100 100 100 @ Forward Voltage V„(V) V (V) F 5000 @ 75 5000 @ 75 5000 @ 75 1.0 1.0 1.0 @ Capacitance C Maximum L (MA) Reverse Recovery Time (PF) F @ 10

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

FD333

Abstract: JAN1N486B FJT1100
Contextual Info: DIODES LOW LEAKAGE DIODES BY DESCENDING BV GLASS PACKAGE By c Vr VOLTS VF @ VOLTS MAX @ 50 @ @ If mA 225 1.1 @ 100 DO-7 250 25 @ 225 1.0 @ 100 DO-7 1N486B 250 50 @ 225 1.0 @ 100 DO-7 1N486B JAN 250 25 @ 225 1.0 100 DO-7 1N486B JAN TX 250 25 @ 225 1.0 @ @

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and