1NS6 Search Results

1N5648

Abstract: LN5644 11 p IN5662A 1N5645 1N5629 1N5629A 1N5630 1N5630A 1/DIODE 1n564 1N5631A
Contextual Info: Zener Type No. Zene Voltage tlzT Volts @ mA Max. Zener Impedance @ Izi Ohms Zener Voltage Tolerance 1N5629 1N5629A 1N5630 1N5630A 6.8 6.8 7.5 7.5 10 10 10 10 1N5631 1N5631A 1N5632 1N5632A 1N5633 1N5633A 1N5634 1N5634A 1N5635 1NS635A 1N5636 1N5636A 1N5637 1N5637A

Contextual Info: 1N5624GPTHRU 1N5627GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current DQ-201 AD FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgical^ bonded construction

N5657

Abstract: 1N5629 1NS6
Contextual Info: Tr a n s Z o r b ^ General ^ ^ Semiconductor ^ • Industries, Inc. T R A N S IE N T V O L T A G E SUPPRESSORS 1N 5629 THRU 1N 5665A FEATURES • 1500 watts Peak Pulse Power dissipation • Available in ranges from 5.5 to 171 volts • MIL qualified per MIL-S-19500/500

1n5624

Contextual Info: 1N5624 THRU 1N5627 GLASS PASSIVATED SILICON RECTIFIER Voltage - 200 to 800 Volts Current - 3.0 Amperes FEATURES ♦ Glass passivated cavity-free junction ♦ High temperaturae metallurgical^ bonded con­ structed rectifiers ♦ Hermetically sealed package

Contextual Info: 1500 WATT TRANSIENT VOLTAGE SUPPRESSOR DIODES 5.50V to 171V DO 13 CASE DESCRIPTION . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage sensitive components.

Contextual Info: ZENER DIODES, GENERAL PURPOSE JED EC P a rt Num ber N o m in a l Zenar V o lt a g e a t l lr M a x im urn Z e n e r Zener Im p e d a n c e Test C u r re n t Z, <8 1, V, V o lt * 1 (m A l (O h m s ) 1N957B 1N 9 5 8 8 1N 9S98 1(4960B 1N 961B 6.8 7.5 8.2

Contextual Info: 1N5624GP.1N5627GP FAGOR 3 Amp. Glass Passivated Junction Rectifier Dimensions in mm. ò ou> g D0-201 AD Plastic Voltage 200 to 800 V. Current 3.0 A. at 70 °C. \J -3 ±0d\ _ 59.5 min._ Mounting instructions

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

KL SN 102 94v-0

Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Contextual Info: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results

STR F 5653

Abstract: STR 5664 STR G 5653
Contextual Info: G EN L in str / ^ ^ power SLE General ^ Semiconductor • Industries, Inc. D 3ÔT Ü1 3 7 T-K -Z3 GGGH^GT 250 I RANSZORB T R A N S IE N T VO LTA G E SUPPRESSORS 1N5629 THRU 1N5665A FEATURES APPLICATION CONT'D > 1500 watts Peak Pulse Power dissipation i Available in ranges from 5.5 to 171

TC514258A

Abstract: 7g rac TC514258
Contextual Info: TC514258AP/AJ/AZ-7Û, TG514258ÂP/AJ/AZ-80 TC514258ÂP/AJ/AZ-10 T ENTATIVE D A T A 2 6 2 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M DESCRIPTION The TC514258AP/AJ/AZ is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514258AP/AJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced

ZEN114

Contextual Info: Zener Regulator Diodes Part Number ZEN 1N1589 1N1589A 1N1590 1N1590A 1N1591 1N1591A 1N1592 1N1592A 1N1593 1N1593A 1N1594 1N1594A 1N1595 1N1595A 1N1596 1N1596A 1N1597 1N1597A 1N1598 1N1598A 1N5333A 1N5333B 1N6632 SMBG5333B SMBJ5333B 1N5334A 1N5334B 1N6633 SMBG5334B

1N6640US

Contextual Info: 1N6639US THRU 1N6641 US AVAILABLE IN JAN, JANTX, JANTXV AND JANS 1N6639US PER MIL-PRF-19500/609 1N6640US SWITCHING DIODES 1N6641US NON-CAVITY GLASS PACKAGE METALLURGiCALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

RGP10GI

Abstract: 1N50S1 iRL104F 1N5622 FR10r lN4937 1N4245 1N4246 1N4248 1NS062
Contextual Info: RECTIFIER DIODES, Standard Recovery, Glass Passivated, Glass Package S i P a rt N um ber M a x im u m A v e ra g e R e c tifie d C u rre n t at T. Peak In v e rs e V oltage I» (A m p s jT , { “ C ) PIV [V o lts ) 1N4245 1N4246 1N4247 1N4248 1N4249 1N5D59

G11-1600

Abstract: RA50V 1m5624 VR200 D0-204AP
Contextual Info: GLASS PASSIVATED RECTIFIERS Part numbering system for all parts excluding JEDEC registered, PRO ELECTRON and industry standard parts. AO XV • 777 A = Type Designator C = GJamper D = Damper R = fiecovery “Blank" = Standard Y = Reverse Voltage A = 50V B = 100V

Contextual Info: 1N5614 THRU 1N5622 MINIATURE GLASS PASSIVATED MEDIUM-SWITCHING JUNCTION RECTIFIER Voltage - 200 to 1000 Volts C u rren t- 1.0. Am pere FEATURES ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ 1.0 Ampere operation at T a = 55°C with

1NS619

Abstract: 1NS617
Contextual Info: 1N5615 THRU 1N5623 MINIATURE GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Voltage - 200 to 1000 Volts Current- 1.0 Ampere FEATURES ♦ High temperature metallurgical^ bonded constructed rectifiers ♦ Glass passivated cavity-free junction in a D0-204AP package

1NS616

Contextual Info: 1N5614THRU 1N5622 GLASS PASSIVATED MEDIUM-SWITCHING JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts _ FEATURES_ 00-204AP I-I Forward Current - 1.0. Ampere ♦ High temperature metallurgical^ bonded construction ♦ 1.0 Ampere operation

Contextual Info: 1N5615THRU 1N5623 GLASS PASSIVATED FAST SWITCHING RECTIFIER R everse Voltage - 200 to 1000 Volts Forw ard C urrent - 1.0 Am pere_ FEATURES DO-2Q4AP / ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed case ♦ Glass passivated cavity-free junction

JAN1N5620

Contextual Info: POWER SEMICONDUCTOR DIVISION IN s t â » JAN AND JANTX 1N5614 THRU 1N5622 GLASS PASSIVATED JUNCTION MEDIUM- SWITCHING RECTIFIER VOLTAGE - 200 to 1000 Volts T 1.0 0 2 5.4 0 MA 1 .110 (2.73) .065 (1.65) ♦ Qualified to MIL-S-19500/427C ♦ High temperature metallurgical^

1N5631

Abstract: 1N5637A SEMICON
Contextual Info: 1500 WATT TRANSIENT VOLTAGE SUPPRESSOR DIODES 5.50V to 171V DO 13 CASE DESCRIPTION FEATURES: . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage sensitive components.

SKP33A

Abstract: P8KE27A PSKE12A IN504 IN5646 P6KE0.1a P8KE P8KE24 F6KE39A IN5646A
Contextual Info: discrete jGmitronicr hot line fO L L FREE NUMBER 800-777-3960 1500 Watts peak d e v ic e s Metal Case and Epoxy Molded. Silicon Voltage Transient Suppressor Diodes DO-13 METAL MOLDED CASE Reverse Stand Off Voltage Breakdown Voltage Maximum Maximum A*Available as bi­

ci tr 2108

Abstract: 1n5603 jan 1n5603
Contextual Info: JAN IN5597 JAN 1N5600 JAN IN5603 RECTIFIER ASSEMBLIES High Voltage Stacks, lA m p to 5 Amp, Military Approved DESCRIPTION This series o f m ilita ry high-voltage highc u rre n t stacks offers th e u tm o st in FEATURES • Q ualified to MIL-S-19500/404A • PIV: to lOkV

35V-250V

Abstract: 5v Schottky barrier low leakage fast epitaxial diode 14F8 100ns-500ns
Contextual Info: E L E C T R O N I C Brief of Schottky Barrier Diode Friday, 7 August 2009 Schottky Barrier Diode Schottky Barrier Diode SBD indeed more and more extensively to putting to use on Switching-Mode Power Supply (SMPS) in stead of Fast Recovery Epitaxial Diode (FRED). Not only the highest Reverse Recovery Time (trr) but also the lowest Forward Voltage Drop (VF), both are the