1N5624 Search Results

Contextual Info: 57E D • rA Ü U H 345=1325 GD00L.75 bT2 « F Ü R S ~ m 1N5624GP.1N5627GP FAGOR ELECTRONICS 3 Amp Glass Passivated Junction Rectiier f V -■ •«• Dimensions in mm. - DO-27 A DO-201 AD Plastic -i— . -i V - •* V- Voltage 200 to 800 V.

A114F

Abstract: A114A A114N A114F GE A114B MPR12 MPR15 GER4007 DT230B ge a114d
Contextual Info: SILICON RECTIFIERS LOW CURRENT .25 TO 3 AMPERES JEDEC GE TYPE _ — — DT230 MPR10-15 A14A-P t N5059 62 1N4245-49 — -GER4001 -7 1N5624-27 — — fil !iA-N ELECTRICAL SPECIFICATIONS A @ V r M ( r e p ) - I fM ¡surge) T a {° C ) .25 .5 SO 100 —

1N5625

Abstract: 1n5627
Contextual Info: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of

Contextual Info: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability

1N5624GP

Abstract: 1N5627GP JESD22-B102D J-STD-002B 1n5626gp
Contextual Info: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation

1N5625GP

Contextual Info: 1N5624GP . 1N5627GP 3.0 Amp. Glass Passivated Junction Rectifier Current 3.0 A at 70º C Voltage 200V to 800 V DO-201AD DO-27 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction

diode 1n5624

Abstract: 1N5624 1N5625 1N5626 1N5627
Contextual Info: Certificate TH97/10561QM Certificate TW00/17276EM 1N5624 - 1N5627 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 800 Volts Io : 3.0 Amperes D2A FEATURES : * * * * * * Glass passivated cavity-free junction Low forward voltage drop High reliability

IN5624

Abstract: 5627GP in5627 1N5620GP 1N5624GP 1N5627GP 5626GP IN5627GP
Contextual Info: 7E D • 345=1325 GD00L.75 bT2 « F G R S — 1N5624GP. 1N5627GP FAGOR ELECTRONICS 3 Amp. Glass Passivated Tunction Rectiier Dimensions in mm. DO-27 A DO-201 AD - Plastic Mounting instructions 1. Min. distance from body to soldering point, 4 mm.

1N5620GP

Abstract: 1N5624GP 1N5625GP 1N5626GP 1N5627GP
Contextual Info: 1N5624GP. 1N5627GP 3 Amp. Glass Passivated Junction Rectifier Dimensions in mm. DO-201 AD Plastic Voltage 200 to 800 V. Current 3.0 A. at 70 °C. 9.1 ± 0.3 62.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm.

Contextual Info: 1N5624GPTHRU 1N5627GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current DQ-201 AD FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgical^ bonded construction

1n5624

Contextual Info: 1N5624 THRU 1N5627 GLASS PASSIVATED SILICON RECTIFIER Voltage - 200 to 800 Volts Current - 3.0 Amperes FEATURES ♦ Glass passivated cavity-free junction ♦ High temperaturae metallurgical^ bonded con­ structed rectifiers ♦ Hermetically sealed package

1N5624GP

Abstract: 1N5627GP JESD22-B102 J-STD-002
Contextual Info: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current

Contextual Info: 1N5624GP, 1N5625GP, 1N5626GP, 1N5627GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction

1N5624

Abstract: 1N5625 1N5626 1N5627
Contextual Info: 1N5624 thru 1N5627 Glass Passivated Junction Rectifier * d e t n Features e t a P Case Style G3 • • • • Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package Capable of meeting environmental standards of

1N5625

Abstract: 1N5624
Contextual Info: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of

Contextual Info: 1N5624 to 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current e2 949588 • High surge current loading • Lead Pb -free component

1N5625

Abstract: 1N5625 diode diode 1n5624 vishay 1N5625 1N5626
Contextual Info: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading

1N5624

Abstract: 1N5625 1N5626 1N5627
Contextual Info: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES N T E D * CASE STYLE G3 E P A T Forward Current - 3.0 Amperes 1.0 25.4 MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4)

1N5624GP

Abstract: 1N5625GP 1N5626GP 1N5627GP
Contextual Info: 1N5624GP THRU 1N5627GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES D * DO-201AD N T E ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction

diode 1n5624

Abstract: vishay 1N5625 9563 1N5624 1N5625 1N5626 1N5627
Contextual Info: 1N5624.1N5627 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Applications 94 9588 Rectifier, general purpose

diode 1n5624

Abstract: 1N5624 with forward current 5 amp 1N5624 1N5625 1N5626 1N5627
Contextual Info: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES N T E D * CASE STYLE G3 E P A T Forward Current - 3.0 Amperes 1.0 25.4 MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. 0.052 (1.32) 0.048 (1.22) DIA. ♦ Glass passivated cavity-free junction

1N5405

Abstract: 1N5625 1N5400 1N5401 1N5402 1N5403 CPR2-010 CPR2-020 CPR2-040 CR2-010
Contextual Info: Rectifiers, General Purpose Continued IO (AMPS) 2.0 3.0 @ TA (oC) 75 50 75 55 75 IFSM (AMPS) 50 50 200 100 125 CASE GPR-1A DO-15 DO-201AD GPR-3A VRRM (VOLTS) 50 1N5400 100 CPR2-010 CR2-010 1N5401 200 CPR2-020 CR2-020 1N5402 300 400 1N5550 1N5624 1N5551 1N5625

Contextual Info: 1N5624GP.1N5627GP FAGOR 3 Amp. Glass Passivated Junction Rectifier Dimensions in mm. ò ou> g D0-201 AD Plastic Voltage 200 to 800 V. Current 3.0 A. at 70 °C. \J -3 ±0d\ _ 59.5 min._ Mounting instructions

JANTX1N5624

Abstract: 1N5B26
Contextual Info: POWER SEMICONDUCTOR DIVISION JAN AND JANTX 1N5624 THRU 1N5627 PASSIVATED JUNCTION SILICON RECTIFIER VOLTAGE - 50 to 800 Volts T FEATURES 0.90 22.861 (5.84 OIA. .170 (4.32) \ i .320 (8.13) .200 (5.08) 7 •052 C l.32]DIA. .049 (1.24) CURRENT - 3.5 Amperes_