DDR333 PRODUCTION DRAWING Search Results

DDR333

Abstract: SSTV16859 74SSTV16859 DDR256 PC2100 PC2700 PI74SSTV16859 PI74SSTV32852 DDR333 production drawing x235
Contextual Info: May 15, 2002 Week 3 Application: Pericom Devices: Memory Modules PI74SSTV32852 & SSTV16859 Registered Buffers Overview 1U DIMM Solution Pericom offers the perfect solution to address the register needs of the memory module industry’s standard DDR 1U DIMM card. These devices provide efficient space savings

Contextual Info: NT128D64SH4B0GM / NT128D64SH4BBGM 128MB : 16M x 64 PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM 200 pin Unbuffered DDR SO-DIMM Based on DDR400/333/266 16Mx16 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • Data is read or written on both clock edges

DDR400B

Abstract: NT128D64SH4BBGM-5 PC2100 PC2700 PC3200 NT128D64SH4B0GM nanya nt128d64sh4bbgm-75b
Contextual Info: NT128D64SH4B0GM / NT128D64SH4BBGM 128MB : 16M x 64 PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM 200 pin Unbuffered DDR SO-DIMM Based on DDR400/333/266 16Mx16 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • Data is read or written on both clock edges

DDR400B

Contextual Info: NT256D64SH8B0GM / NT256D64SH8BAGM 256MB : 32M x 64 PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM 200 pin Unbuffered DDR SO-DIMM Based on DDR400/333/266 16Mx16 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • Data is read or written on both clock edges

DDR333 pc2700 256MB nanya NT256D64SH8BAGM-6K

Abstract: DDR400A NT256D64SH8BAGM-6K DDR400 NT256D64SH8B0GM-75B NT256D64SH8BAGM-5T NT256D64SH8B0GM NT256D64SH8BAGM PC2100 PC2700
Contextual Info: NT256D64SH8B0GM / NT256D64SH8BAGM 256MB : 32M x 64 PC3200 / PC2700 / PC2100 Unbuffered DDR SO-DIMM 200 pin Unbuffered DDR SO-DIMM Based on DDR400/333/266 16Mx16 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • Data is read or written on both clock edges

ddr333 512mb 32mx16 2,5

Abstract: x16-wide NANYA LABEL EXAMPLE
Contextual Info: NT512D64SH8A0FM / NT512D64SH8B0GM / NT512D64S8HB0FM 512MB : 64M x 64 PC2700 / PC2100 Unbuffered DDR SO-DIMM 200 pin Unbuffered DDR SO-DIMM Based on DDR333/266 32Mx8 SDRAM D64S8H Based on DDR333/266 32Mx16 SDRAM (D64SH8) Features • DRAM DLL aligns DQ and DQS transitions with clock transitions.

nanya ddr

Abstract: PC2700-2533 sodimm
Contextual Info: NT512D64SH8A0FM / NT512D64SH8B0GM / NT512D64S8HB0FM 512MB : 64M x 64 PC2700 / PC2100 Unbuffered DDR SO-DIMM 200 pin Unbuffered DDR SO-DIMM Based on DDR333/266 32Mx8 SDRAM D64S8H Based on DDR333/266 32Mx16 SDRAM (D64SH8) Features • 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)

DDR200

Abstract: DDR266 DDR333 HYB25DC256163CE-4 HYB25DC256163CE-5 HYB25DC256163CE-6
Contextual Info: January 2007 HYB25D C25616 3 CE- 4 HYB25D C25616 3 CE- 5 HYB25D C25616 3 CE- 6 2 5 6 - M b i t D o u b l e - D a t a - R a t e SG R A M Green Product Internet Data Sheet Rev. 1.1 Internet Data Sheet HYB25DC256163CE 256-Mbit Double-Data-Rate SGRAM HYB25DC256163CE-4, HYB25DC256163CE-5, HYB25DC256163CE-6

Contextual Info: DDR 128Mb SDRAM Nanya Technology Corp. Preliminary Not finalized. NT5DS8M16IS NT5DS8M16IS Commercial and Industrial Consumer DDR 128Mb SDRAM Features  Data Integrity with Power Savings  JEDEC DDR Compliant - Differential clock inputs CK and 

HYB25DC512160B

Abstract: TSOP RECEIVER HYB25DC512160BE-5 DDR400B Qimonda AG HYB25D DDR200 DDR266 DDR333 HYB25DC512800B
Contextual Info: April 2007 HYB25DC512800B[E/F] HYB25DC512160B[E/F] 512-Mbit Double-Data-Rate SDRAM DDR SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.2 Internet Data Sheet HYB25DC512[80/16]0B[E/F] Double-Data-Rate SDRAM HYB25DC512800B[E/F], HYB25DC512160B[E/F] Revision History: 2007-04, Rev. 1.2

M1S51264DSH8B1G-6K

Contextual Info: M1N1G64DS8HB0F / M1N51264DSH8B1G / M1N25664DSH4B1G M1S1G64DS8HB0F / M1S51264DSH8B1G / M1S25664DSH4B1G 1GB, 512MB and 256MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM

Contextual Info: M1N51264DSH8B1G / M1N25664DSH4B1G M1S51264DSH8B1G / M1S25664DSH4B1G 512MB and 256MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • Unbuffered DDR SO-DIMM based on 110nm 512M bit die B

Contextual Info: March 2008 HYB25DC256803C[E/F] HYB25DC256163C[E/F] 2 5 6 - M b i t D o u b l e - D a t a - R a t e SG R A M Green Product Internet Data Sheet Rev. 1.30 Internet Data Sheet HYB25DC256[80/16]3C[E/F] 256-Mbit Double-Data-Rate SGRAM HYB25DC256803C[E/F], HYB25DC256163C[E/F]

Contextual Info: Nanya Technology Corp. DDR 128Mb SDRAM NT5DS8M16IS NT5DS8M16IS Commercial and Industrial Consumer DDR 128Mb SDRAM Features  Data Integrity with Power Savings  JEDEC DDR Compliant - Differential clock inputs CK and  - Auto Refresh Mode - Self Refresh Mode

Contextual Info: DDR 256Mb SDRAM Confidential Nanya Technology Corp. NT5DS32M8ES / NT5DS16M16ES NT5DS32M8ES / NT5DS16M16ES Commercial and Industrial Consumer DDR 256Mb SDRAM Features  Data Integrity  JEDEC DDR Compliant - Differential clock inputs CK and  - Auto Refresh Mode

Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

D431

Abstract: DDR266 DDR266B DDR333 DDR400 DDR400B hynix module suffix DDR333 production drawing
Contextual Info: 200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb B ver. based unbuffered

DDR333B

Abstract: DDR400B HYI25D512160C HYI25D512160CC-5 HYI25D512160CT-5 hyi25d512160ce-5
Contextual Info: November 2006 HYI25D512160C[C/E/F/T] 5 1 2 - M b i t D o u b l e - D a t a - R a t e SD R A M DDR SDRAM Internet Data Sheet Rev. 1.0 Internet Data Sheet HYI25D512160C[C/E/F/T] 512-Mbit Double-Data-Rate SDRAM HYI25D512160C[C/E/F/T] Revision History: 2006-11, Rev. 1.0

Contextual Info: DDR 256Mb SDRAM Confidential Preliminary Preliminary Nanya Technology Corp. Not finalized. Not finalized. NT5DS32M8ES / NT5DS16M16ES NT5DS32M8ES / NT5DS16M16ES Commercial and Industrial Consumer DDR 256Mb SDRAM Features  Data Integrity  JEDEC DDR Compliant

H645

Abstract: DDR333 DDR400B HYI25DC512160CE HYI25DC512800CE
Contextual Info: December 2006 HYI25 DC 51216 0 C E HYI25 DC 51280 0 C E 5 1 2 - M b i t D o u b l e - D a t a - R a t e SD R A M Green Product DDR SDRAM Preliminary Internet Data Sheet Rev. 0.7 Preliminary Internet Data Sheet HYI25DC512[16/80]0CE 512-Mbit Double-Data-Rate SDRAM

Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

HYMD564M646C

Abstract: d431 DDR266 DDR266B DDR333 DDR400 DDR400B HYMD532M646C hynix ddr hynix ddr sdram
Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

CY28352

Abstract: CY28352OC CY28352OCT DDR333 DDR400
Contextual Info: CY28352 Differential Clock Buffer/Driver DDR400- and DDR333 Compliant Features Description • Supports 333-MHz and 400-MHz DDR SDRAM • 60- – 200-MHz operating frequency • Phase-locked loop PLL clock distribution for double data rate synchronous DRAM applications