DDR2800E Search Results

Samsung EOL

Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Contextual Info: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM

IS43DR16128

Abstract: IS46DR16128 IS43DR16128-3DBL IS43DR16128-3DBI
Contextual Info: IS43/46DR16128 SEPTEMBER 2012 2Gb x16 DDR2 SDRAM FEATURES • • • • • • • • • • • • • • • Clock frequency up to 333MHz (667 MT/s Data Rate) 8 internal banks for concurrent operation 4-bit prefetch architecture Programmable CAS Latency: 3, 4, 5, 6 and 7

HYB18T1G160C2F-25F

Abstract: HYB18T1G400C2F-3S HYB18T1G800C2F-25F HYI18T1G160C2F-3 DDR2-800E
Contextual Info: January 2008 HY[B/I]18T1G400C2[C/F] HY[B/I]18T1G800C2[C/F] HY[B/I]18T1G160C2[C/F] 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.02 Internet Data Sheet HY[B/I]18T1G[40/80/16]0C2[C/F] 1-Gbit Double-Data-Rate-Two SDRAM

HYB18T1G400C2FL-3

Abstract: HYB18T1G400C2F-3S
Contextual Info: March 2008 HY[B/I]18T1G400C2[C/F] L HY[B/I]18T1G800C2[C/F](L) HY[B/I]18T1G160C2[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM Internet Data Sheet Rev. 1.20 Internet Data Sheet HY[B/I]18T1G[40/80/16]0C2[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.20, 2008-03

DDR2-667C

Contextual Info: December 2006 HYB18T256400BF L HYB18T256800BF(L) HYB18T256160BF(L) 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.0 Internet Data Sheet HYB18T256xx0BF(L)–[25F/…/5] 256-Mbit Double-Data-Rate-Two SDRAM

HYB18T512-800B2F3S

Abstract: HYB18T512160B2F-3S
Contextual Info: July 2007 HY[B/I]18T512400B2[C/F] L HY[B/I]18T512800B2[C/F](L) HY[B/I]18T512160B2[C/F](L) 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.2 Internet Data Sheet HY[B/I]18T512[40/80/16]0B2[C/F](L) 512-Mbit Double-Data-Rate-Two SDRAM

Contextual Info: August 2008 HYB15T 1G 400C 2 F HYB15T 1G 800C 2 F HYB15T 1G 160C 2 F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM EU RoHS Compliant Products Internet Data Sheet Rev. 1.00 Internet Data Sheet HYB15T1G[40/80/16]0C2F 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.00, 2008-08

DDR2-667C

Abstract: tls 106-6
Contextual Info: June 2008 HYB18T 1G 400C 4 F HYB18T 1G 800C 4 F HYB18T 1G 160C 4 F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM EU RoHS Compliant Products Advance Internet Data Sheet Rev. 0.50 Advance Internet Data Sheet HYB18T1G[40/80/16]0C4F 1-Gbit Double-Data-Rate-Two SDRAM

Contextual Info: November 2007 HYB18T C1G 80 0 CF HYB18T C1G 16 0 CF 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.51 Date: 2007-12-13 Advance Internet Data Sheet HYB18TC1G[80/16]0CF 1-Gbit Double-Data-Rate-Two SDRAM

HYB18TC512160CF-19F

Abstract: HYB18TC512160CF
Contextual Info: July 2008 HYB18T C51280 0 CF HYB18T C51216 0 CF 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM EU RoHS Compliant Products Internet Data Sheet Rev. 1.10 Internet Data Sheet HYB18TC512[80/16]0CF 512-Mbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.10, 2008-07

IS43DR83200A

Abstract: IS43DR16160A-3DBLI datasheet IS43DR16160A-37CBLI IS43DR83200A-37CBLI IS43DR32160A DDR2 x32
Contextual Info: IS43DR83200A IS43/46DR16160A, IS43DR32160A 32Mx8, 16Mx16, 16Mx32 stacked die DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle

qimonda hyb18t1g400bf-2.5

Contextual Info: May 2007 HY[B/I]18T1G400B[F/C] L HY[B/I]18T1G800B[F/C](L) HY[B/I]18T1G160B[F/C](L) 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.2 Internet Data Sheet HY[B/I]18T1G[40/80/16]0B[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM

Contextual Info: IS43/46DR83200A IS43/46DR16160A 32Mx8, 16Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)

Contextual Info: H5PS2562GFR Series 256Mb DDR2 SDRAM H5PS2562GFR-xxC H5PS2562GFR-xxI H5PS2562GFR-xxL H5PS2562GFR-xxJ This document is a general product description and is subject to change without notice. SK hynix Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5PS12421C L FP HY5PS12821C(L)FP HY5PS121621C(L)FP 512Mb DDR2 SDRAM HY5PS12421C(L)FP HY5PS12821C(L)FP HY5PS121621C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5PS2G431M[P] HY5PS2G831M[P] 2Gb DDR2 SDRAM DDP HY5PS2G431M[P] HY5PS2G831M[P] This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: IS43/46DR16160B 16Mx16 DDR2 DRAM PRELIMINARY INFORMATION NOVEMBER 2012 FEATURES DESCRIPTION •฀ VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V •฀ JEDEC standard 1.8V I/O SSTL_18-compatible •฀ Double data rate interface: two data transfers per clock cycle

H5PS5162g

Abstract: H5PS5162GFR H5PS5162 DDR2800D
Contextual Info: H5PS5162GFR Series 512Mb DDR2 SDRAM H5PS5162GFR-xxC H5PS5162GFR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

H5PS5162

Abstract: H5PS5162FFR DDR21
Contextual Info: H5PS5162FFR Series 512Mb DDR2 SDRAM H5PS5162FFR-xxC H5PS5162FFR-xxI H5PS5162FFR-xxL H5PS5162FFR-xxJ [New Product] H5PS5162FFR-xxP H5PS5162FFR-xxQ This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

Contextual Info: IS43/46DR81280B L , IS43/46DR16640B(L) JULY 2014 1Gb (x8, x16) DDR2 SDRAM FEATURES •                     Clock frequency up to 400MHz 8 internal banks for concurrent operation 4-bit prefetch architecture

Contextual Info: Data Sheet, Rev. 1.2, Aug. 2005 HYS64T128020HM–3.7–A HYS64T128020HM–5–A 214-Pin Micro-DIMM-DDR2-SDRAM Modules MDIMM DDR2 SDRAM RoHS Compliant Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-08 Published by Infineon Technologies AG,

IS43DR82560B

Abstract: IS46DR16128B IS43DR16128B-25EBLI IS46DR16128B-3DBLA1 IS43DR16128B-25EBL
Contextual Info: IS43/46DR82560B IS43/46DR16128B 256Mx8, 128Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)

Contextual Info: H5PS5162GFR Series 512Mb DDR2 SDRAM H5PS5162GFR-xxC H5PS5162GFR-xxI H5PS5162GFR-xxL H5PS5162FFR-xxJ This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

hy5ps121621b

Abstract: HY5PS12821B HY5PS12421B 1HY5PS12821B HY5PS12421
Contextual Info: HY5PS12421B L FP HY5PS12821B(L)FP HY5PS121621B(L)FP 512Mb DDR2 SDRAM HY5PS12421B(L)FP HY5PS12821B(L)FP HY5PS121621B(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.