2N6058
Abstract: 1165897
Contextual Info: 1165897 Darlington complementary silicon power transistors. Designed for general-purpose amplifier and low frequency switching applications. Features: • High DC current gain - hFE = 3500 typical at IC = 5.0A dc. • Collector-emitter sustaining voltage - at 100mA
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100ma2n60581165897 |
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13003 charger
Abstract: 230v to 5v circuit using 13003 transistor 121k 1kv capacitor
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.4 Jun 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2013 - Jun - 26
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act334act512act410act411+8act410/411act413f/400vsc0531000pf/400v13003 charger230v to 5v circuit using 13003 transistor121k 1kv capacitor
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230V AC primary to 12V, 1A secondary transformer
Abstract: 230v dc 5a rectifier diode 13003 charger 230V ac to 5V dc usb charger circuit CM 2N65
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.5 Jan 2014 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2014 - Jan - 26
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act334act512act410act411+10act410/411act413f/400vsc0531000pf/400v230v ac primary to 12v, 1a secondary transformer230v dc 5a rectifier diode13003 charger230v ac to 5v dc usb charger circuitcm 2n65
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transistor darlington package to.3
Abstract: 2N6052
Contextual Info: 1165915 Darlington complementary silicon power transistors. This package is designed for general-purpose amplifier and low frequency switching applications. Features: • • • • TO-3 High DC current gain - hFE = 3500 (typical) at IC = 5.0A dc. Collector-emitter sustaining voltage - at 100mA.
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100matransistor darlington package to.32n6052 |
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EE16-4 core transformer
Abstract: EE16 transformer 5v 2.1a
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT41X Rev 1.5 Jan 2014 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History 2014 - Jan - 23 Rev 1.5 Page 4.5 Update ACT410 5V2.1A application solution transformer and parameter.
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act41xact410act413epc17+6act41112v1aact412-11foree16-4 core transformeree16 transformer 5v 2.1a
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EE16 12V
Abstract: SMD TRANSISTOR B7 EE16 transformer 5v 2.1a t1/epc17 TRANSFORMER smd transistor 12W 3 pins EE16-4 core transformer
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT41X Rev 1.4 JUL 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History 2013 - Jul - 22 Rev 1.4 Page 4.5 Update ACT410 5V2.1A application solution transformer and parameter.
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act41xact410act413epc17+10act41112v1aact412-11foree16 12vsmd transistor b7ee16 transformer 5v 2.1at1/epc17 transformersmd transistor 12w 3 pinsee16-4 core transformer
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2N5631
Abstract: 2N6031
Contextual Info: Product Specification www.jmnic.com 2N5631 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6031 ・High collector-emitter sustaining voltage ・High DC current gain ・Low collector-emitter saturation voltage APPLICATIONS
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2n56312n6031 |
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Motorola transistor 388 TO-204AA
Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —
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2n60302n60312n56302n6035+142n60382n60362n6039225aamotorola transistor 388 to-204aa714 icbc 4582sc124bu108bu3262sa10462sc7bdx542sd214
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ic 7490
Abstract: 2N60 transistor Ic 7490 circuit 2N6034 PNP 2N60 2N60 2N6037 2N6039 7490 ic 2N6035
Contextual Info: # NPN PNP 2N60342N6037 2N60352N6038 2N60362N6039 @ PLASTIC DAR LINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. o High DC Current hFE = 2000 o Gain– Typ Collector-Emitter
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2n60342n60372n60352n6038+82n60362n6039ic 74902n60 transistoric 7490 circuitpnp 2n602n607490 ic
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2N6034
Abstract: 2N6036 2N6035 6038
Contextual Info: SavantIC Semiconductor Product Specification 2N6034 2N6035 2N6036 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2N6037/6038/6039 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier
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2n60342n60352n6036o-126+22n6037/6038/60396038
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2N6039
Abstract: 2N6037 2N6038 2n6034
Contextual Info: SavantIC Semiconductor Product Specification 2N6037 2N6038 2N6039 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2N6034/6035/6036 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier
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2n60372n60382n6039o-126+22n6034/6035/60362n6034
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2N6043
Abstract: 2N6045 2N6044 2N6045 NPN POWER DARLINGTON 2n6040
Contextual Info: SavantIC Semiconductor Product Specification 2N6043 2N6044 2N6045 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2N6040/6041/6042 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage · APPLICATIONS
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2n60432n60442n6045o-220c+32n6040/6041/60422n6045 npn power darlington2n6040
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2N6044
Abstract: 2N6045 2N6043 2N6043 data sheet 2n6040
Contextual Info: Inchange Semiconductor Product Specification 2N6043 2N6044 2N6045 Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type 2N6040/6041/6042 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・ APPLICATIONS
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2n60432n60442n6045o-220c+32n6040/6041/60422n6043 data sheet2n6040
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BU108
Abstract: MJE104 MJ1000 2SD424 2SD423 2sc2371 complementary BU208 MJE2482 2SD675 2SC1419
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc
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2n37732n6609tip73btip74+14tip74atip74btip75tip75abu108mje104mj10002sd4242sd4232sc2371 complementarybu208mje24822sd6752sc1419
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2N6039
Abstract: 2N6037 2N6038 2N603 2n6034
Contextual Info: Inchange Semiconductor Product Specification 2N6037 2N6038 2N6039 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2N6034/6035/6036 ・DARLINGTON ・High DC current gain APPLICATIONS ・Designed for general-purpose amplifier
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2n60372n60382n6039o-126+32n6034/6035/60362n6032n6034
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2N5631
Abstract: 2N5631 equivalent 2N6031
Contextual Info: SavantIC Semiconductor Product Specification 2N5631 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6031 ·High collector-emitter sustaining voltage ·High DC current gain@IC=8A ·Low collector saturation voltage APPLICATIONS
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2n56312n60312n5631 equivalent |
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2N5631
Abstract: 2N6031 2N5631 equivalent
Contextual Info: Inchange Semiconductor Product Specification 2N5631 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6031 ・High collector-emitter sustaining voltage ・High DC current gain@IC=8A ・Low collector saturation voltage APPLICATIONS
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MJE34 pnp
Abstract: 2N6041 application 2SC493 2SA1046 MJ15003 300 watts amplifier 2SC334 bc 617 transistor equivalent BUX98A pin configuration NPN transistor tip41c BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —
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2n60402n60432n60412n6044+122n60422n6045mje34 pnp2n6041 application2sc4932sa1046mj15003 300 watts amplifier2sc334bc 617 transistor equivalentbux98apin configuration npn transistor tip41cbu326
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2N6059 MOTOROLA
Abstract: 2N6058 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current Gain —
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2n6052/d2n60582n60522n6059+3box54052n6059 motorola2n6058 motorola
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2SA1046
Abstract: mje15033 replacement 2SC1030 BD417 BD415 BD295 BU108 2SB528 BD262 2SC2080
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 See 2N6050 Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes
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2n60572n60592n60502n6111+142n62882n61092n61072n62922sa1046mje15033 replacement2sc1030bd417bd415bd295bu1082sb528bd2622sc2080
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2N6035 2N6036 2N6038 2N6039
Abstract: 1N5825 2N6035 2N6036 2N6038 2N6039 MSD6100
Contextual Info: ON Semiconductor PNP 2N6035 Plastic Darlington Complementary Silicon Power Transistors 2N6036* NPN 2N6038 . . . designed for general–purpose amplifier and low–speed switching applications. 2N6039 * • High DC Current Gain — hFE = 2000 Typ) @ IC = 2.0 Adc
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2n60352n60362n60382n6039+5225aar145252n6035 2n6036 2n6038 2n60391n5825msd6100
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equivalent 2N6040
Abstract: 2N6043 data sheet 400 watts amplifier circuit diagram 2N6040 2N6041 2N6042 2N6043 2N6044 2N6045 2NXXXX
Contextual Info: PNP 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* *Preferred Device Plastic Medium−Power Complementary Silicon Transistors . . . designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
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2n60402n60422n60432n6045+6equivalent 2n60402n6043 data sheet400 watts amplifier circuit diagram2n60412n60442nxxxx
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2n6052
Abstract: 2N6058 MOTOROLA 2n6058
Contextual Info: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general-purpose amplifier and low frequency switching applications. • • • High DC Current Gain —
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2n6052/d2n60582n60522n6059+2o-204aa2n6058 motorola
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1N5825
Abstract: 2N6052 2N6052G 2N6059 MSD6100
Contextual Info: 2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features http://onsemi.com • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc
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2n60522n6052/d1n58252n6052g+22n6059msd6100
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