DAB4 Search Results

6206a

Abstract: AT29C256PC 74HC00 DAB4 DDB20 DAB11 16k x 8 ram dab12 DDB6 dab8
Contextual Info: 0200 8000 FFFF DAB2 DAB1 DAB0 DDB0 DDB1 DDB2 DAB6 DAB5 DAB4 DAB3 WR~ DAB15 DAB7 DDB23 DDB21 DDB19 DDB17 DDB15 DDB13 DDB11 DDB9 2 4 6 8 10 12 14 16 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 X: X: P: RAM X: 32K INT. Y: 0200 P: INT. X: 16K INT. RAM EXT. P:, X:

A43L0616A

Abstract: A43L0616AV
Contextual Info: A43L0616A 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue December 4, 2000 Preliminary 0.1 Add input/output capacitance specification February 13, 2001

Flash MCp nand DRAM 107-ball

Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
Contextual Info: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

PD45128163

Abstract: uPD45128163G5-A75-9JF-E
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-E 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 word × bit × bank . The synchronous DRAM achieved high-speed data transfer using the pipeline architecture.

18PIN

Abstract: HE8P1702AP HE8P1702AS
Contextual Info: HE8P1702A HE8P1702A SERIES TARGET SPECIFICATION 1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

dba1

Abstract: VG3617161ET
Contextual Info: VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

8X13

Abstract: A43L0632
Contextual Info: A43L0632 Preliminary 512K X 32 Bit X 2 Banks Synchronous DRAM Document Title 512K X 32 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue August 1, 2005 Preliminary August, 2005, Version 0.0 AMIC Technology, Corp.

EDI416S4030A

Contextual Info: EDI416S4030A 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,

WED416S8030A

Contextual Info: WED416S8030A 2M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,

SC14401

Abstract: 95208 CR16A P0427 P-1031 AD12 AD14 SC14402 SC14422 ad1791
Contextual Info: February 1998 SC14402 Complete Baseband Processor for DECT Handsets General Description • ■ ■ ■ Preliminary document version 1.5. The SC14402 is a 3.0 Volt CMOS chip optimized to handle all the audio, signal and data processing needed within a DECT handset. An ADPCM transcoder, a very low power

Contextual Info: ESMT M52D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)

M12L64164A

Contextual Info: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y ORDERING INFORMATION PRODUCT NO. JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3

Contextual Info: ESMT M52S128324A Revision History Revision 1.0 May. 30 2006 -Original Revision 1.1(Jun. 20 2006) -Modify tRC and tRFC spec Revision 1.2(Mar. 02 2007) - Delete BGA ball name of packing dimensions Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007

Contextual Info: ESMT M12L64164A Revision History Revision 1.0 13 Dec. 2001 - Original Revision 1.1 (10 Jan. 2002) - Add -6 spec Revision 1.2 (30 Jan. 2002) - Delete Page44 PACKING DIMENSION 54-LEAD TSOP(II) SDRAM (400mil) (1:4). Revision 1.3 (26 Apr. 2002) - tRFC : 60ns. (Page5)

dba1

Abstract: VG3617161DT
Contextual Info: VIS VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

dba1

Abstract: MS82V16520 QFP100-P-1420-0
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

K4S561633C

Abstract: K4S561633C-RL
Contextual Info: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.7 December 2001 Rev. 0.7 Dec. 2001 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).

Contextual Info: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION  Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with

8X13

Abstract: A43E06321
Contextual Info: A43E06321 Preliminary 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM Document Title 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue July 21, 2005 Preliminary July, 2005, Version 0.0

A43E16161

Abstract: A43E16161V
Contextual Info: A43E16161 Preliminary 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue August 2, 2005 Preliminary August, 2005, Version 0.0

Contextual Info: K4S161622D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.5 September 2000 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.5 Sep. '00 K4S161622D CMOS SDRAM Revision History

sdram cmos

Contextual Info: CMOS SDRAM K4S28163LD-RF/R 8Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S28163LD-RF/R CMOS SDRAM Revision History Revision 0.0 (December 8. 2000, Preliminary) • First generation of 128Mb Low Power SDRAM (V DD 2.5V, VDDQ 1.8V).

Contextual Info: K4S161622D-TI/P CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.0 June 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Jun . 1999 K4S161622D-TI/P

Contextual Info: ESMT SGRAM M32L1632512A 256K x 32 Bit x 2 Banks Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION y y y y The M32L1632512A is 16, 777, 216 bits synchronous high data rate Dynamic RAM organized as 2 x 262, 144 words by 32 bits, fabricated with ESMT’s high performance CMOS technology. Synchronous