D33D Search Results

LG 631 IC

Abstract: D33D26 NPN transistor ECB TO-92 transistor npn Vcbo 25V
Contextual Info: Central semiconductor Corp. Central semiconductor Corp. 14 5 Adam s Avenue Hauppauge, N ew Y ork 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR D33D26 type is an NPN silicon transistor manufactured by the epitaxial planar process, designed for general purpose, high current applications.

D29E6

Abstract: D33D24 D33D25
Contextual Info: Silicon Transistors D33D24-27 D29E4-7 D29E4J1-7J1 I D33D24J1-27J1 The PNP D29E4-7 series and the NPN D33D24-27 series are silicon, planar, passivated, epitaxial trans­ istor intended for general purpose applications. These complementary pairs are especially suited for the

D29E1

Abstract: D29E2 D29E2J1 D33D22J1 D29E1J1 D33D21 D33D21J1 D33D22 D33D21.22
Contextual Info: Silicon Transistors D29E1 D29E2 D29E1J1 D29E2J1 D33D21 D33D22 D33D21J1 D33D22J1 The P N P D29E1, 2 series and the N P N D33D21, 22 series are silicon, planar, passivated, epitaxial transis­ tors intended for general purpose applications. These com plem entary pairs are especially suited for the

D33D30

Abstract: D29E9...10 D29E D33D29.30 D29E9.10 D33D d29e9
Contextual Info: Silicon Transistors I D29E9-10 I D33D29-30 I I D29E9J1-10J1 I D33D29J1-30JT| Other D33D Series on Pages 1074-10761 The PNP D29E9-10 series and the NPN D33D29-30 series are silicon, planar, passivated, epitaxial transistors intended for general purpose appli­

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

C184L

Abstract: BC184LC
Contextual Info: AL LE GR O MICROSYSTEMS INC =53 8 5 1 4 0 1 9 SPRA GU E. D • G50433Ö 0 0 0 3 5 T 3 T ■ ALGR S E M I C O N D S / ICS 93D 03593 J PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘D’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C V) (V) (V)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

pnp 2N3906 beta

Abstract: 2n4058 2N3395 N3904 2N2926 2N3396 2N3397 2N3398 to-92hs D29E2-J1
Contextual Info: SP RAGUE Econoline Silicon S E P T R Tr ans istors ▼Table 1 - GUARANTEED D-C BETA DISTRIBUTION BY GROUP 55-110 h n FE N s Color >sCode G ro u p S^ Red 2N3395 - 2N3396 - 90-180 150-300 250-500 Orange - 10-60% Plastic-Molded «Table 2 - GUARANTEED A-C BETA DISTRIBUTION

2N5309

Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN

D33D30

Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE fT V C E (S A T ) M in.-Max. @ IC , V C E (V> (V) Max. l c . *B PT Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) 2N 4256 2N4424 2N 4425 N PN

2N4256

Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 "to-98" package
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-M ax. @ IC, V C E (V> (V) Max. T ypical (MHz) Cc b @ 10V 1 MHz T ypical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N 4424 2N4425 NPN

2N4256

Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

2N4425

Abstract: 2N5305 2N4256 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

2N2926 equivalent

Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A

AMD K6

Contextual Info: Preliminary Information AMDB AMD-K6-2E Embedded Processor Data Sheet Publication # 22529 Issue Date: Jan 2000 Rev: B Amendment/0 2000 Advanced Micro Devices, Inc. All rights reserved. T h e c o n te n ts of th is d o c u m e n t a r e p ro v id e d in co n n e c tio n w ith A d v a n c e d M icro

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TRANSISTOR 1003

Abstract: MPSU45 MPSA43C MPSD01C D16P1C D33D21C MPSD02C MPSD03C MPSD04C MPSD05C
Contextual Info: BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type DC Current Gain IcBO VcE sat f lc Max. ^(BR)CBO V(BR)CEO V(BR)EBO Max. @vCB hFE ^FE (aic @vCE Max. c Min. @lc Cot,1 V NF1 (mA) (V) (nA) (V) Min. Max. (mA) (V) (V) (mA) (MHz) (mA) (p H (ns) (dB)

d13d1

Abstract: 16P2N M62320P
Contextual Info: MITSUBISHI < STD. LINEAR ICs > M62320P,FP 2 8-BIT I/O EXPANDER for I C BUS GENERAL DESCRIPTION The M62320P/FP is a CMOS 8-bit I/O expander which has serial to parallel and parallel to serial data converting functions. It can communicate with a microcontroller via few wiring

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

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