D29E Search Results

2SA708 NEC

Abstract: MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 D29E9 D29E9 TP5821 BCW93A BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L BC361-10 BC432 BC1Sl-l0 BC303-5 BC303-5 BC303-5 2N2591 BCW97A 2N4032 2NS223 ~~~~ 25 30 35 40 BFT70 BFT80 BFT80 2N4028 MPS751 2N2S03

PRE030N

Contextual Info: PART NUMBER REV. SSP-D29E10SUGC-6V A UNCONTROLLED DOCUMENT REV, A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11176. ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE V f= 6 V TYP MAX UNITS 574 nm G.D

Contextual Info: UNCONTROLLED DOCUMENT REV. PART NUMBER SSP-D29E10SW C -28V E L E C T R O -O P T IC A L CHARACTERISTICS Ta = 25, C PARAM ETER SYM BOL MIN V f= 2SV TYP PEAK W AVELENGTH MAX UNITS - rim 28 V mcd FORW ARD V O LTAG E Vf R EV ER S E V OLTAG E Vr A X IA L IN T EN S IT Y{*1

Contextual Info: UNCONTROLLED DOCUMENT REV. PART NUMBER SSP-D29E1 0SYC-24V ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE MAX UNITS 590 nm 24 Vf Vr mcd 2x theta 5.0 AXIAL INTENSITY VIEWING ANGLE EMITTED COLOR: EPOXY LENS FINISH:

2N4250 motorola

Abstract: bc154 KT501S LOW-POWER SILICON PNP BC313-16
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 20 TMPT956H4 2N5255 2N5256 TMPT812M4 2SA1037KFR 2SA1037KFR MMBA812M6 MMBA812M6 ~~g~~~~~: 25 30 35 . 40 45 50 BC479 2SA733 2SB819 TMPT956H5 2SA493G•TM· Y 2SB435G PN4250 A5T4250 2N4250 MPS4250 D29E7 BC313·1a

D29E6

Abstract: D33D24 D33D25
Contextual Info: Silicon Transistors D33D24-27 D29E4-7 D29E4J1-7J1 I D33D24J1-27J1 The PNP D29E4-7 series and the NPN D33D24-27 series are silicon, planar, passivated, epitaxial trans­ istor intended for general purpose applications. These complementary pairs are especially suited for the

D29E1

Abstract: D29E2 D29E2J1 D33D22J1 D29E1J1 D33D21 D33D21J1 D33D22 D33D21.22
Contextual Info: Silicon Transistors D29E1 D29E2 D29E1J1 D29E2J1 D33D21 D33D22 D33D21J1 D33D22J1 The P N P D29E1, 2 series and the N P N D33D21, 22 series are silicon, planar, passivated, epitaxial transis­ tors intended for general purpose applications. These com plem entary pairs are especially suited for the

LEDs white

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SC:0.50 REV. S S P — D29E1OSWD— 12V PRELIMINARY IN P / N ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C PARAMETER MIN DIR V f =12 V TYP MAX UNITS PEAK WAVELENGTH TEST COND nm FORWARD VOLTAGE 12 REVERSE VOLTAGE 14 Vf 5.0 Vr

D33D30

Abstract: D29E9...10 D29E D33D29.30 D29E9.10 D33D d29e9
Contextual Info: Silicon Transistors I D29E9-10 I D33D29-30 I I D29E9J1-10J1 I D33D29J1-30JT| Other D33D Series on Pages 1074-10761 The PNP D29E9-10 series and the NPN D33D29-30 series are silicon, planar, passivated, epitaxial transistors intended for general purpose appli­

Contextual Info: PART NUMBER REV. SSP-D29E1 0SYC-6V A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11176. DATE 10.1 1.04 PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE V f= 6 V TYP MAX UNITS 590 nm 6.0 Vf i,7oa Vr mcd 20 2x theta 5.0 AXIAL INTENSITY VIEWING ANGLE

Contextual Info: UNCONTROLLED DOCUMENT REV. PART NUMBER SSP-D29E1 0SYC-28V ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C PARAMETER MIN PEAK WAVELENGTH Vf=2SV TYP MAX UNITS 590 nm 23.0 Vf AXIAL INTENSITY 3B0 Vr mcd VIEWING ANGLE 20 2x theta FORWARD VOLTAGE REVERSE VOLTAGE 5.0

Contextual Info: UNCONTROLLED DOCUMENT REV. PART NUMBER SSP-D29E10SUGC-28V ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER MIN PEAK WAVELENGTH V f= 2 S V TYP MAX UNITS 574 1% FORWARD VOLTAGE REVERSE VOLTAGE 32 Vf 5.0 AXIAL INTENSITY 1000 Vr mcd VIEWING ANGLE 25 2x theto

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N5309

Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN

D33D30

Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE fT V C E (S A T ) M in.-Max. @ IC , V C E (V> (V) Max. l c . *B PT Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) 2N 4256 2N4424 2N 4425 N PN

2N4256

Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 "to-98" package
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-M ax. @ IC, V C E (V> (V) Max. T ypical (MHz) Cc b @ 10V 1 MHz T ypical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N 4424 2N4425 NPN

2N4256

Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

2N4425

Abstract: 2N5305 2N4256 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

2sa501

Abstract: MM4647 2N1508 2SA482 USAF508ES021 2SA248 2SA478 TIP14 SI342P 1700N
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2N5306 equivalent

Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN

T3D+53

Abstract: t3d 05 T3D 53
Contextual Info: SPRAGUE/SEMICOND GR OU P T3 85 14 01 9 SPRAGUE. D • 0513050 OGGBSTfl T ■ S E M I C O N D S / ICS D 93D 03598 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain IcBO Device Type

IDC7X2

Abstract: PLM250S40T1 73D34 Y4A16 12062R104K9BB2 746X101 ADSP-21160MKB-80X CR21-4701F-T FER002 TRANSISTOR c104
Contextual Info: ADSP-21160 EZ-KIT Lite Evaluation System Manual Revision 4.0, January 2005 Part Number 82-000513-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2005 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written

ST8034

Abstract: ST8033 SL3015 NS1000 n BC420 2CY38 usaf521es071 NS1001 QD400-78 NS1862
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,