pnp 2N3906 beta
Abstract: 2n4058 2N3395 N3904 2N2926 2N3396 2N3397 2N3398 to-92hs D29E2-J1
Contextual Info: SP RAGUE Econoline Silicon S E P T R Tr ans istors ▼Table 1 - GUARANTEED D-C BETA DISTRIBUTION BY GROUP 55-110 h n FE N s Color >sCode G ro u p S^ Red 2N3395 - 2N3396 - 90-180 150-300 250-500 Orange - 10-60% Plastic-Molded «Table 2 - GUARANTEED A-C BETA DISTRIBUTION
|
OCR Scan
|
2n33952n33962n33972n3398+112n29262n44012n44022n4403mps2713mps2714pnp 2n3906 beta2n4058n3904to-92hsd29e2-j1
|
PDF
|
D33D30
Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE fT V C E (S A T ) M in.-Max. @ IC , V C E (V> (V) Max. l c . *B PT Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) 2N 4256 2N4424 2N 4425 N PN
|
OCR Scan
|
2n42562n44242n4425130-b40+92im51722n51742n52322n5232a2n5249alc/10d33d302n53052n5306
|
PDF
|
2N4256
Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N4424 2N 4425 N PN
|
OCR Scan
|
2n42562n44242n4425130-b40+82im51722n51742n52322n5232a2n5249a2n54182n53052n5306
|
PDF
|
2N4425
Abstract: 2N5305 2N4256 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN
|
OCR Scan
|
2n42562n44242n4425130-b40+72im51722n51742n52322n5232a2n5249a2n53052n5306
|
PDF
|
2N2926 equivalent
Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A
|
OCR Scan
|
50/ia800maget706get708+15get914get3013get3646ge1705cet7082n2926 equivalentbeta transistor 2n22222n3392 equivalent2n3416 equivalent2n3393 equivalent2n3900a2n3394 equivalent2n3859a equivalent to pnp1n45322n5232a equivalent
|
PDF
|
EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
|
OCR Scan
|
eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
|
PDF
|
TRANSISTOR 1003
Abstract: MPSU45 MPSA43C MPSD01C D16P1C D33D21C MPSD02C MPSD03C MPSD04C MPSD05C
Contextual Info: BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type DC Current Gain IcBO VcE sat f lc Max. ^(BR)CBO V(BR)CEO V(BR)EBO Max. @vCB hFE ^FE (aic @vCE Max. c Min. @lc Cot,1 V NF1 (mA) (V) (nA) (V) Min. Max. (mA) (V) (V) (mA) (MHz) (mA) (p H (ns) (dB)
|
OCR Scan
|
mpsa43cmpsd01cmpsd02cmpsd03c+10mpsd04cmpsd05cd33d26cd33d27cd33d29cd33d30ctransistor 1003mpsu45d16p1cd33d21c
|
PDF
|
2N6008
Abstract: 2N6000 2n3960a 2N5998 2N6006 2N6015 2N60C 2N6002 2n8004 GET3014
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 2N6000 2N60Q2 2N6001 2N6S03 40 GET2221A GET2222A 2N 6004 2N 6006 2N6010 2N6012 50 60 GET»29 60 GET24S4
|
OCR Scan
|
50/ia800maget706get708+15get914get3013get3646ge1705cet7082n60082n60002n3960a2n59982n60062n60152n60c2n60022n8004get3014
|
PDF
|
d33025
Abstract: 2N6000 2n3391 2N6006 2N6002 GET3013 GET3014 GET3638 2n2926 GET706
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A
|
OCR Scan
|
50/ia800maget706get708+13get914get3013get3646ge1705cet708d330252n60002n33912n60062n6002get3014get36382n2926
|
PDF
|
2N6004
Abstract: 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A
|
OCR Scan
|
50/ia800maget706get708+15get914get3013get3646ge1705cet7082n60042n3960a2n3856d330252n44242n80042n60002n60162n3856a2n6015
|
PDF
|
SL 100 NPN Transistor base emitter collector
Abstract: D29E6 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN
|
OCR Scan
|
2n42562n44242n4425130-b40+92im51722n51742n52322n5232a2n5249alc/10sl 100 npn transistor base emitter collectord29e62n5305
|
PDF
|
2N4256
Abstract: 2N4425 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 2N5172
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN
|
OCR Scan
|
2n42562n44242n4425130-b40+92im51722n51742n52322n5232a2n5249ad29e1/d33d212n53052n53062n5172
|
PDF
|
NPN transistor 2n4400 beta value
Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
Contextual Info: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN
|
OCR Scan
|
2n27112n27122n29242n2925+142n29262n44012n44022n4403mps2713mps2714npn transistor 2n4400 beta valuetp4058npn transistor 2n 3904tp4059transistor ebc 3904tp40602n2712 to-92hstp3644
|
PDF
|
aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
|
OCR Scan
|
11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
|
PDF
|
|
|
D29E6
Abstract: D33D24 D33D25
Contextual Info: Silicon Transistors D33D24-27 D29E4-7 D29E4J1-7J1 I D33D24J1-27J1 The PNP D29E4-7 series and the NPN D33D24-27 series are silicon, planar, passivated, epitaxial trans istor intended for general purpose applications. These complementary pairs are especially suited for the
|
OCR Scan
|
d29e4-7d33d24-27d29e4j1-7j1d33d24j1-27j1+5lc/10029e7d29e6d33d24d33d25
|
PDF
|
2N5232
Abstract: 2N3858 2N3858A 2N3859 2N3859A 2N3860 D29F1 D29F2 D29F3 D29F4
Contextual Info: PNP SILICON SIGNAL MEDIUM CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES V c E iia t VcEO Type hf-F S i — 5V — 2mA D29F1 60-120 D29F2 100-200 D29F3 150-300 D29F4 250-500 D29F5 60-120 D29F6 100-200 D29F7 150-300 (O) — 10 V M in. (V) ici) — 10mA
|
OCR Scan
|
d29f1d29f2d29f32n3858+62n3858a2n38592n3859a2n38602n5232d29f4
|
PDF
|
COMPLEMENTARY PNP-NPN TRANSISTORS
Abstract: 2NG076 2N5354 2N5355 2N5356 2N5418 2N5419 2N5420 D29E1 D29E2
Contextual Info: SILICON SIGNAL SWITCHING & AM PLIFIER COM PLEM ENTARY PNP-NPN PAIRS NPN Type PNP V (mA) Min. Max. @ 50mA, 2.5mA Max. (V) @ 1V, 50mA Ccb @ 10V, 1MHz Typical (Pf) ft Typical (MHz) Package Outline No. Specification Sheet Ne. 25 360 500 40 120 0.250 5.0 250
|
OCR Scan
|
2n53542n54182n53552n5419+72n53562n5420500macomplementary pnp-npn transistors2ng076d29e1d29e2
|
PDF
|
COMPLEMENTARY PNP-NPN TRANSISTORS
Abstract: 2N5354 2N5355 2N5356 2N5418 2N5419 2N5420 D29E1 D29E2 D33D21
Contextual Info: SILICON SIGNAL SWITCHING & AMPLIFIER COMPLEMENTARY PNP-NPN PAIRS Type NPN PNP 2 N 5354 V c E fSATJ lllFE V Pt < 25°C ~(mW) (mA) Min. Max. @ 50mA, 2.5mA Max. (V) VcEO @ 1V, 50m A lc ’ Ccb @ 10V, 1M H z Typical (Pf) ft Typical (MHz) Package Outline No.
|
OCR Scan
|
2n53542n54182n53552n5419+102n53562n5420500mad33d26d29e7d33d27complementary pnp-npn transistorsd29e1d29e2d33d21
|
PDF
|
d33025* specification
Abstract: 2N5309 2N5998 2N6006 2N6000 2N6002 GET3013 GET3014 GET3638 GET3646
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A
|
OCR Scan
|
50/ia800maget706get708+13get914get3013get3646ge1705cet708d33025* specification2n53092n59982n60062n60002n6002get3014get3638
|
PDF
|
2n6004
Abstract: 2n4424 2N5825 2N6015 2N6000 GET2222A 2n524 2N5309 2N6006 d33025
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p
|
OCR Scan
|
50/ia800maget706get708+15get914get3013get3646ge1705cet7082n60042n44242n58252n60152n6000get2222a2n5242n53092n6006d33025
|
PDF
|
2NS35
Abstract: D33025 TRANSISTOR 2n3901 pnp beta 250 ft 150 2N60C 2N38S 2N601 transistor 2n3391 2N6000 GET3014
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003
|
OCR Scan
|
50/ia800maget706get708+15get914get3013get3646ge1705cet7082ns35d33025transistor 2n3901pnp beta 250 ft 1502n60c2n38s2n601transistor 2n33912n6000get3014
|
PDF
|
2N3856
Abstract: 2N3403 2N4256 2N3405 2N4425 2N4424 2N2926 029e1 2N5356 2N6000
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pn p GET3014 GET3S3B GET3638A GET3638 GET3638A
|
OCR Scan
|
50/ia800maget706get708+15get914get3013get3646ge1705cet7082n38562n34032n42562n34052n44252n44242n2926029e12n53562n6000
|
PDF
|
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
|
OCR Scan
|
500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
|
PDF
|
TRANSISTOR 1003
Contextual Info: SPRAGUE/SEMICOND 8514 01 9 SPRAGUE, GR OU P ^3 D • flSlBSSD G0G35t>7 T ■ S E M I C O N D S / ICS 93D 03567 BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘IMPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type MPSA43C MPSD01C MPSD02C MPSD03C
|
OCR Scan
|
g0g35tmpsa43cmpsd01cmpsd02c+7mpsd03cmpsd04cmpsd05cmpsd06cmpsl01cmpsu45ctransistor 1003
|
PDF
|
