D29E1
Abstract: D29E2 D29E2J1 D33D22J1 D29E1J1 D33D21 D33D21J1 D33D22 D33D21.22
Contextual Info: Silicon Transistors D29E1 D29E2 D29E1J1 D29E2J1 D33D21 D33D22 D33D21J1 D33D22J1 The P N P D29E1, 2 series and the N P N D33D21, 22 series are silicon, planar, passivated, epitaxial transis tors intended for general purpose applications. These com plem entary pairs are especially suited for the
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d29e1d33d21d29e2d33d22+5d29e1j1d33d21j1d29e2j1d33d22j1d33d21.22
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pnp 2N3906 beta
Abstract: 2n4058 2N3395 N3904 2N2926 2N3396 2N3397 2N3398 to-92hs D29E2-J1
Contextual Info: SP RAGUE Econoline Silicon S E P T R Tr ans istors ▼Table 1 - GUARANTEED D-C BETA DISTRIBUTION BY GROUP 55-110 h n FE N s Color >sCode G ro u p S^ Red 2N3395 - 2N3396 - 90-180 150-300 250-500 Orange - 10-60% Plastic-Molded «Table 2 - GUARANTEED A-C BETA DISTRIBUTION
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2n33952n33962n33972n3398+112n29262n44012n44022n4403mps2713mps2714pnp 2n3906 beta2n4058n3904to-92hsd29e2-j1
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2N4256
Abstract: 2N4425 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 2N5172
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN
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2n42562n44242n4425130-b40+92im51722n51742n52322n5232a2n5249ad29e1/d33d212n53052n53062n5172
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NPN transistor 2n4400 beta value
Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
Contextual Info: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN
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2n27112n27122n29242n2925+142n29262n44012n44022n4403mps2713mps2714npn transistor 2n4400 beta valuetp4058npn transistor 2n 3904tp4059transistor ebc 3904tp40602n2712 to-92hstp3644
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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