D2219 Search Results

LM318 data

Abstract: LM318 APPLICATION LM318D LM318 LM218 LM318 application note LM318J LM218D LM218P LM318JG
Contextual Info: LM218, LM318 HIGH-PERFORMANCE OPERATIONAL AMPLIFIERS D2219, JUNE 1976-REVISED OCTOBER 1988 • Small-Signal Bandwidth . . . 15 MHz Typ D, JG , OR P PACKAGE TOP VIEW • Slew Rate . . . 50 V/ |is Min BAL/COMP C • Bias Current. . . 250 nA Max (LM218) • Supply Voltage Range . . . ± 5 V to ± 20 V

LM318D

Abstract: LM318 LM218 LM318 data LM318J LM218D LM218P LM318JG
Contextual Info: TEXAS INSTR LIN/INTFC m fl=ibl72M DD77455 b LM218, LM318 HIGH-PERFORMANCE OPERATIONAL AMPLIFIERS 7 - ^ 7 9 '0 6 -/0 IflE D D2219, JUNE 1976—REVISEO OCTOBER 1988 • Small-Signal Bandwidth . . . 15 MHz Typ D, JG , OR P PACKA G E (TOP VIEW) • Slew R a te . . . 50 V/|is Min

d2219uk

Contextual Info: PR EL IM INA RY TetraFET D2219UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss

Contextual Info: TetraFET D2219UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE PIN 1 – SOURCE

Contextual Info: TetraFET D2219UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE

d2219uk

Abstract: DSA00300037
Contextual Info: TetraFET D2219UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: nil Vrr r = mi TetraFET D2219UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2 .5 W - 1 2 .5 V - 1GHz SINGLE ENDED I D f C A I FEATURES • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: nil TetraFET itfi llll SEME D2219UK LAB METAL GATE RF SILICON FET MECHANICAL DATA C GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2 .5 W - 12.5V - 1 GHz SINGLE ENDED B I JT\ X L. ► * FEATURES • SIMPLIFIED AMPLIFIER DESIGN * • SUITABLE FOR BROAD BAND APPLICATIONS

d2219uk

Contextual Info: TetraFET D2219UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE

72s4

Abstract: MD2218 MD2218AF MD2218F MD2219 MD2219AF MD2219F MQ2218 MQ2219
Contextual Info: MOTOROLA SC 6367254 -CXSTRS/R Tb F> MO TO RO L A SC XSTRS/R D E ^ ti3Li7E!54 82435 96D F M D 2 2 1 8A F M D2219AF M 02218, A MD2218AF Symbol M 02219,A D2219AF VCEO 30 40 Collector-Base Voltage VcBO 60 75 Vdc Emitter-Base Voltage V EBO 5.0 6.0 Vdc 500 *C

Contextual Info: MOTOROLA SC CXSTRS/R F 4bE D b3b72SH 00=12421 7 • MOTb MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M D2219AF DM0 Discrete M ilitary Products NPIM S ilic o n Dual Sm all-Signal T ra n sisto r Suffixes: H X, H X V /#///#/ Processed per MIL-S-19500/251 . . . d e s ig n e d fo r g e n e ra l-p u rp o se sw itch in g and a m p lifie r a p p lica tio n s

2N1711 MOTOROLA

Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

BSy38

Abstract: Motorola* 2n708 2N1711 MOTOROLA DH3467CD 2N706 BSY39 SP3725 SP3725QDB tch98 2N706A
Contextual Info: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

2N2270 equivalent

Abstract: 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N2008 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 2N2102
Contextual Info: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B

C4161

Abstract: C3746 B1134 B1133 d1913 k1420 J307 B1136 D1825 d1667
Contextual Info: san yo Urnarte d:TO-220lHL # :T 0 220MF T 0 -2 2 0 M I —. . S 'il-' T y p e T r a n s i s t o r s rkirl inmrml \ VŒD 'Hv 30 50 60 80 85 100 120 160 200 250 300 400 500 600 800 900 A )\ 0.02 0.2 M?WcT 1 A1697 C4474 0.4 A1696 C4473 1.5 . A1606 C3751 C4159

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

c4460

Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
Contextual Info: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4

D1651

Abstract: d1047 c3987 B817 c2078 D1650 d1402 D1649 B1273 d1878
Contextual Info: MOS FET : VDSS, I D C o n t i n u e d on n e x t p a g e T O - 2 2 0 . F I ( L S , t y p e ) 50 60 75 80 D1394* A1258* B507 B1273 B1346 C3144* D313 D1912 D2027 C2078 C4547* 3 3. 5 4 4. 5 B824 D1060 D1395* 5 5. 5 6 8 9 10 12 15 150 200 250 J 282 B884* D1194 *