D000S Search Results

Contextual Info: SANKEN ELECTRIC CO LT» 2 D000S3Ô 3 ^ S A K J 3SE D POWER TRANSISTORS Note I2SA TYPE Pc VcBO VCEO V eb o 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 1386A 2SA1488 1488A ( T a = 2 S 'C ) Ic Ib Tj (V) (A) (A) CC) -5 -10 -2 150 150 -160 -160 - 5

DYMEC

Abstract: DYMEC voltage to frequency converter fsr temperature DDD0555 T-51-10-16 Dynamic Measurements
Contextual Info: DYÎ1EC INC Ml DE MODEL ODM'iEfc. D000SS3 2 | D T - 5 1 - 1 0 - 16 3120 16 BIT A/D CONVERTER Dynamic Measurements Corp. 8 Lowe I Avenue. Winchester. Mass 01890 (617 729-7870 TWX (7101348-6596 / This Material Copyrighted By Its Respective Manufacturer J 3004926 OYMEC INC

0447-0500-09

Abstract: 0447-0070 delay line 400ns DTSHW-3.8N
Contextual Info: BEL FUSE INC DflE D | 13S14E3 D000S05 7 1 T -H V /defining a degree of excellence DIGITAL DELAY LINE SE R IE S 0447 LOW POWER MODULE 20 MA TYP 5 TAP/FIXED DELAY TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage Rise Time Pulse Width Pulse Period Supply Current,

S20WB40

Abstract: S20WBI0 SHINDENGEN DIODE
Contextual Info: SHE D SHINDENGEN ELECTRIC MFG • SEITBÖ? D000SDT 355 « S H E J ■ O U T L IN E D IM E N S IO N S S20WBD 800V 20A ■ RATINGS $ Ê Î Î J i:£ 5 Ë !fê * A b s o l u t e M a x im u m R a t i n g s Item S to ra g e Tem perature Operating Junction Temperature

BKZ200A

Abstract: BKZ10 BKZ10A BKZ11 BKZ11A BKZ12 BKZ12A BKZ13 BKZ13A BKZ15
Contextual Info: SEUICON INC S T-SEMICOND T? DE | fllBMTVL. D000S77 Û SILICON TRANSIENT VOLTAGE SUPPRESSORS Steady State Power 3 Watts, Peak Pulse Power 1500 Watts ST-S Typ* No. BKZ6.8 BKZ6.8A BKZ7.5 BKZ7.5A BKZ8.2 BKZ8.2A BKZ9.1 BKZ9.1A BKZ10 BKZ10A BKZ11 BKZ11A BKZ12 BKZ12A

k3918

Abstract: J6815 d5611 K2723 B561C k3918c6 B8202 c1212c C3311 K2203
Contextual Info: TRANSFORMERS AND INDUCTORS TOKIN CORP 41E D • SObTbBb D000SÔQ 2 B T O A I O Inductors for Switching Power Supplies Type E Core Specifications Type Model Shapes and dimen­ sions mm a . H (horizontal type) b V (vertical type) c Inductance Type EC16 Type EC19

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDER E l 'PROPRIETARY' TU BEL FUSE INC. AND SHALL NOT I E CDPIED, REPRODUCED DR DISGUISED VITHOLT THE WRITTEN APPROVAL DF BEL FUSE INC. SCHEMATIC E L EC T R IC A L CH A RA C TERISTIC S 6 25°C TRD1- 1 - TURNS RATIO R J4 5

Contextual Info: GT-64060 IBBIBk « Galileo !»; Technology High-lntegration PCI Bridge/ Memory Controller P roduct Preview R evision 0.7 4/1/97 Please contact Galileo Technology for possible updates before finalizing a design. FEATURES • High-integration PCI bridge/memory controller with

power convertibles

Abstract: smd TRANSISTOR code b6 Power Convertibles dc/dc WP10R24S05 smd 10116 WP10R24D12 WP10R24D15 WP10R24S12 WP10R24S15 WP10R48S05
Contextual Info: 1=POWER f= CONVERTIBLES WP1QR SERIES 10 WATTS REGULATED DC/DC CONVERTERS SMALL PACKAGE, WIDE INPUT RANGE FEATURES APPLICATIONS • SMALL PACKAGE SIZE: 1.6" x 2" • INDUSTRY STANDARD PINOUT • SURFACE MOUNT DEVICES SMD • l o w -c o s t A l t e r n a t e s o u r c e

Contextual Info: 5- 700 MHz Standard Hybrid Amplifier Temperature +25 MHz dB 12.5 ± 0 .5 Small signal gain Gain vs. temperature +0.9/-0.9 dB Max Gain flatness 1.0 1.0 dB Max p-p Reverse isolation 22 22 dB Min Input 1.5:1 1.5:1 Max O utput 1.5:1 1.5:1 Max +22 + 22 dBm Min

4GM201

Contextual Info: n/A-COM ADV S E M I C O N D U C T O R S7E D SbMEiaB DÜQ051Q 3 MA4GM201-2000 2010 2012 MA4GM201 SERIES 2100 GaAs MMIC DC-2 GHz SPST Switch Features • BROAD BANDWIDTH: DC - 2 GHz ■ 3 NANOSECOND SWITCHING 4GM201 ■ EXCELLENT INTERMODULATION PRODUCTS AND TEMPERATURE

Contextual Info: 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY advance ,NFo r m a t , o n J U L Y ,997 FEATURES DESCRIPTION • High-speed access time: 10, 12, 15 ns The IS S IIS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process

Contextual Info: m A M X 2 3 C 2 1O O MACRONIX. INC. 2 M - B I T 2 5 6 K x C M 8 O / 1 S M S 8 K A S K x 1 6 1 R O M FEATURES Completely TTL compatible Operating current: 60mA Standby current: 100|iA Package - 40 pin DIP(600 rfiil • Switchable organization - 256K x 8(byte mode)

as7c36432-6qc

Abstract: 64KX32 tqfp 64 pcb land pattern TQFP 14X20 land
Contextual Info: H ig h P e rfo rm a n c e 64K X 32 C M O S SRAM « II J J i A S7C 36432 6 4 K X 3 2 Synchronous burst SRAM Preliminary information Features • • • * * * * • Organization: 65,536 words x 32 bits Fully synchronous pipelined operation Flow-through option

Contextual Info: DF SERIES D-sub connectors Metal Covers for EMI Protection •ORDERING CODE Aluminum Diecast Covers (90° Cable Exit) D—025—MCOt AluminumDiecast Covers (90° Cable Exit, ScrewLockType) D—025—MC03 | Design number (for internal use only) | Design number (for internal use only)

RUBYCON twss

Abstract: RUBYCON Capacitors TWSS twss series
Contextual Info: RU BY CON AMERICA INC OflE D | T^OOS^Ö 0000544 0 | A ,Q S -U -0 capacitors REB M 8 8 — t 5(MS 1 6 MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS MS16 SERIES CLow profile, 12.5mm to 25mm Height] • FEATURES iISv«0«r # M S 1 6 series has been designed for low profile equipments such as

Contextual Info: I n ter n a tio n a l 1N137B S e m ic o n d u c to r , I n c . and GENERAL PURPOSE DIODES 1N138B SINGLE ENDED CAN 1 SILICON JUNCTION DIODES International Semiconductor, Inc. 1N137B and 1N138B are improved versions of the prototype 1N137A and 1N138A Diodes. The "B" versions feature

2SC19

Abstract: 2S019 CECL
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA _ 39C ~ 3^ »e TOTVESD OODQSOD <D I S C R E T E / O P T O 00500 D T '3 /'2 .7 ° S M & x J V Ï - CECL) o y 4 vffri ? v & z. 9 ° Hi gh S pe e d Swi t c h i ng Appi i ca t i ons C E C L ) ° TWin Type T r a n s i s t o r

TSD231

Contextual Info: 13E D I TSD2310 O g DOSSI 5 | VITELIC CORP HF V IT E L IC V61C01 &V61C02 FAMILY HIGH PERFORMANCE LOW POWER 512 x 9 & 1024 x 9 BIT CMOS PARALLEL FIFO MEMORY •%£ Addressing is maintained internally by both ports so that data are stored and recovered sequentially by

S3V 83

Abstract: S3V 75 S3V 05 S3V 77 Litton LN-200 S3V 09 R/S3V 92
Contextual Info: LI T T O N I N D / L I T T O N SO LI » Linon SbE D • SSMMHDG OQGOSOM 4Ö7 « L I T T Low-Noise M icrow ave GaAs FET Electron Devices D-1503 Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 2.6 dB @ 18 GHz 94 Y777\ DRAIN ■ Gain a t NF 6.5 dB @ 18 GHz

smd transistor marking HT1

Abstract: Ht1 SMD 6 pin smd ht1 ht1 smd MARKING SMD TRANSISTOR DQ MT5C6404 a13914 0000S12
Contextual Info: AUSTIN SEMICONDUCTOR, INC. MILITARY SRAM 16K AVA ILA BLE AS M ILITARY SPECIFICATIONS MT5C6404 883C 16K X 4 SRAM X 4 SRAM PIN ASSIG NM ENT Top View • S M D 5 9 6 2 -86859, -89692 • M IL -S T D -8 8 3 , C la ss B • R ad ia tio n to le ra n t (co n su lt facto ry)

Contextual Info: MOSAI C SEMI CONDUCT OR INC 4QE D S3 ^35337^ GGQOSBT 7 ESINOC 7 ^ - / 3 - 2 <? PUMA 2U4002 PUM A 2U4002-10/12/15 Issue 1.0 : October 1990 ADVANCE PRODUCT INFORMATION Mosaic Semiconductor Inc. 4,194,304 bit CMOS High Speed Static RAM Pin Definition Features

CA24S12-40

Abstract: CA24D12-30 CA24S12-30 CA24S15-40 CA24S5-25 CA24S5-40
Contextual Info: U//7LL Wall Industries, Inc. CA Power Sources and Converters Excellence and Innovation 25 S e r ie s to ¿ W atts Featu res Ultra W ide Input 4:1 12 Watts per Cu b ic Inch 11 LC Input Filter I I 500VD C Minimum Input/Output Isolation I ! Regulated Outputs

LANC509N

Abstract: LANA509 LAN-C
Contextual Info: U/nLL Power Sources and Converters Excellence and Innovation Wall Industries, Inc. LAN Series to 2 Watts FEATURES • Choice of 4 Different Package Sizes 91 Regulated and Unregulated Outputs H Short Circuit Protection ü Isolation Voltage to 2500 VDC m IEEE 802.3 LAN Compatible