CREME96 Search Results

SMV512K32-SP

Contextual Info: SMV512K32-SP SLVSA21C – JUNE 2011 – REVISED OCTOBER 2011 www.ti.com 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES • 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial

CREME96

Abstract: cots fpga radiation 115641 fpga radiation COTS radiation cots cmos RAM SEU proton XQVR300
Contextual Info: Radiation Testing Update, SEU Mitigation, and Availability Analysis of the Virtex FPGA for Space Reconfigurable Computing † Earl Fuller2, Michael Caffrey1, Anthony Salazar1, Carl Carmichael3, Joe Fabula 3 1 Los Alamos National Laboratory 2 Novus Technologies, Inc.

fpga radiation

Abstract: CREME96 AT17LV010-10DP
Contextual Info: AT40KEL040 Reprogrammable SRAM based FPGA Total Dose TID and Single Event Effects (SEE) Abstract Taking into account the growing demand of the space industry for reprogrammable FPGAs as alternatives to low gate count ASICs, Atmel has redesigned its existing

XAPP987

Abstract: voter XAPP988 XAPP216 RAM SEU fpga radiation CREME96 Upsets XAPP779 XQR2V6000
Contextual Info: Application Note: FPGAs Single-Event Upset Mitigation Selection Guide R Author: Brendan Bridgford, Carl Carmichael, and Chen Wei Tseng XAPP987 v1.0 March 18, 2008 Summary This application note discusses different aspects of single-event upsets and recommends

Contextual Info: HXSR06432 2M x 32 STATIC RAM The Multi-Chip Module MCM , 2M x 32 Radiation Hardened Static RAM is a high performance 2,097,152 word x 32-bit static random access memory MCM. The SRAM MCM consists of four 512k x 32 SRAM die fabricated with Honeywell’s 150nm silicon-on-insulator CMOS (S150) technology.

HX6408

Contextual Info: HRT6408 512K x 8 STATIC RAM The monolithic 512k x 8 Radiation Tolerant Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low

Contextual Info: HLX6228 128K x 8 STATIC RAM The monolithic 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation

Contextual Info: HLX6256 32K x 8 STATIC RAM The monolithic 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation

Contextual Info: HX6228 128K x 8 STATIC RAM The monolithic 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems

HLXSR01632

Contextual Info: HLXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low

Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Made changes to Table IA, parameters: IDDDOP3, IDDDOP1, IDDDOPW1, IDDOPW40, IDDDOPW40, IDDOPR1, IDDDOPR1, IDDOPR40, IDDDOPR40, CINA, CINC. Made change to Figure 2; terminal 83, changed from NC to VDD. ksr APPROVED

TSC21020 256

Abstract: ERC32 solar tree abstract DSP-21020 sparc v7 TSC21020F TSC695 TSC695F erc32 3-chip CREME96
Contextual Info: TSC695F: A SEU immune SPARC 32bit computer for space applications Thierry CORBIERE ATMEL Nantes S.A. BP 70602, La Chantrerie 44306 NANTES cedex 3 France thierry.corbiere@nto.atmel.com Abstract After a three-chip set design, the TSC695F, a new monolithic ERC32 brings to space

Contextual Info: SMV512K32-SP www.ti.com SLVSA21H – JUNE 2011 – REVISED JULY 2013 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial

XQR4VSX55

Abstract: XAPP1088 Virtex-4 radiation XAPP988 fpga radiation SRL16 UG071 XQR4VLX200 XQR4VFX140 CREME96
Contextual Info: Application Note: Virtex-4 Family Correcting Single-Event Upsets in Virtex-4 FPGA Configuration Memory XAPP1088 v1.0 October 5, 2009 Summary Author: Carl Carmichael and Chen Wei Tseng Designers of high-reliability applications must be concerned with the effect of single-event

Contextual Info: SMV512K32-SP www.ti.com SLVSA21H – JUNE 2011 – REVISED JULY 2013 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial

251A137

Abstract: 512KX40 251A137-517 4927N w26m 251a137-527 251A137-101-PS001 EOA20156 BAE 0002 BAE Systems 251A137
Contextual Info: REVISIONS R E L or E C O D E S C R I P T I O N REV ECO EOA20156 G D A T E Refer to Document Change History herein 01-19-04 A P P R O V E D K. Mason NOTES: 1. This is a TOP LEVEL DRAWING TLD . 2. BAE SYSTEMS - Manassas, VA reference only. 3. All sheets are the same revision status.

Contextual Info: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology n 150 nm Process n Total Dose Hardness 1x106 rad (Si) n Dose Rate Upset Hardness 1x109 rad(Si)/s

Contextual Info: HLXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low

XAPP779

Abstract: UG156 SRL16 voter UG002 XQR2V6000 XQR2V1000 2V1000
Contextual Info: Application Note: Virtex-II FPGAs R XAPP779 v1.1 February 19, 2007 Summary Correcting Single-Event Upsets in Virtex-II Platform FPGA Configuration Memory Authors: Brendan Bridgford, Carl Carmichael, Chen Wei Tseng Designers of space-based application must be concerned with the effect of single-event upsets

Resolver-to-Digital Converter

Abstract: MRC 100-6 mrc 501 transistor MRC 100-6 MRC 106 resolver sensor CREME96 FLUKE 52 1078e-05 source code for Resolver RDC
Contextual Info: Application Note ACT 5028 Resolver-To-Digital Converter Heavy-Ion Irradiation Test Results for the ACT5028 Resolver-to-Digital Converter by Nathan Nowlin, Steve McEndree, Joseph Benedetto Mission Research Corporation, Microelectronics Division Daryl Butcher

Contextual Info: HXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low

Contextual Info: HX6356 32K x 8 STATIC RAM The monolithic 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems

Contextual Info: SMV512K32-SP SLVSA21B – JUNE 2011 – REVISED JULY 2011 www.ti.com 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES • 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial

cots fpga radiation

Abstract: Upset CREME96 fpga radiation COTS XQVR300 RAM SEU
Contextual Info: Radiation Characterization, and SEU Mitigation, of the Virtex FPGA for SpaceBased Reconfigurable Computing † Earl Fuller2, Michael Caffrey1, Anthony Salazar1, Carl Carmichael3, Joe Fabula 3 1 Los Alamos National Laboratory 2 Novus Technologies, Inc. 3 Xilinx, Inc.