HLXSR01632 Search Results

Contextual Info: HLXSR01632 512K x 32 Low Power Static RAM 1.5V Core VDD Features • ■ ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read Cycle Times Typical ≤20ns Worst case ≤ 25ns Write Cycle Times Typical ≤ 9ns Worst case ≤ 12ns

HLXSR01632

Contextual Info: HLXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low

Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Made changes to Table IA, parameters: IDDDOP3, IDDDOP1, IDDDOPW1, IDDOPW40, IDDDOPW40, IDDOPR1, IDDDOPR1, IDDOPR40, IDDDOPR40, CINA, CINC. Made change to Figure 2; terminal 83, changed from NC to VDD. ksr APPROVED