2N1595
Abstract: 2N1599 2N1596
Contextual Info: COMSET SEMICONDUCTORS 2N1595 thru 2N1599 SILICON THYRISTOR Industrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit applications. Current handling capability of 1.6 amperes at junction temperetures to 125°C
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2n15952n15992n15962n1597+12n1598
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VOLTAGE-60
Contextual Info: COMSET SEMICONDUCTORS 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP)
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2n23222n23262n2323voltage-60 |
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2N3055
Abstract: 2n3055 pin
Contextual Info: COMSET SEMICONDUCTORS 2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
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2n30552n3055 pin |
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MJ1000
Abstract: MJ900 MJ901 mj1001 ic 901 adc 515 Comset
Contextual Info: COMSET SEMICONDUCTORS MJ900/901/1000/1001 COMPLEMENTARY POWER DARLINGTONS TO-3 The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and
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mj900/901/1000/1001mj900mj901mj1000+4mj1001ic 901adc 515comset
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Triac
Abstract: BTB04-600SL
Contextual Info: SEMICONDUCTORS BTB04-600SL STANDARD TRIACS FEATURE The BTB04-600SL 4Q TRIAC is intended for general purpose applications where high surge current capability is required, such as lighting, corded power tools, industrial. This TRIAC features a gate current capability
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BDX33C
Abstract: BDX34C BDX33 bdx33c datasheet BDX34A BDX34 BDX33A BDX33B BDX34B SILICON COMPLEMENTARY transistors darlington
Contextual Info: NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO220 plastic package.
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bdx33bdx33abdx33bbdx33c+6bdx34bdx34abdx34bbdx34cbdx33c datasheetsilicon complementary transistors darlington
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MJ4035
Abstract: mj4032 MJ4032 equivalent MJ4033 MJ4032 TO3 COMSET SEMICONDUCTORS MJ4030 MJ4031 MJ4034
Contextual Info: MJ4030 – MJ4031 – MJ4032 PNP MJ4033 – MJ4034 – MJ4035 NPN DARLINGTON MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS For use as output devices in complementary general purpose amplifier applications. • High DC current Gain – hFE=3500 Typ @ IC=10 Adc
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mj4030mj4031mj4032mj4033+6mj4034mj4035mj4033/34/35mj4032 equivalentmj4032 to3comset semiconductors
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bd648
Abstract: bd650 bd649 BD652 BD644 BD65 BD643 BD645 BD646 BD647 BD649
Contextual Info: BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.
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bd644/646/648/650/652o-220bd643bd645+9bd647bd649bd651bd644bd646bd648bd650 bd649bd652bd65
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BDX34 equivalent
Abstract: bdx33c BDX33 BDX33B BDX34 BDX34B BDX34C BDX33A BDX34A
Contextual Info: NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO220 plastic package.
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bdx33bdx33abdx33bbdx33c+5bdx34bdx34abdx34bbdx34cbdx34 equivalent
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BDX62
Abstract: BDX62B BDX62A BDX62C 62AB
Contextual Info: BDX 62, A, B, C PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V
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bdx62bdx62abdx62bbdx62c+162ab
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BDX62A
Abstract: BDX62B BDX62C BDX62 Fh21e
Contextual Info: BDX 62, A, B, C PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V
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BDX64
Abstract: BDX64A BDX64B BDX64C DSA0082168
Contextual Info: BDX 64, A, B, C PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V
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bdx64bdx64abdx64bbdx64c+1dsa0082168
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transistor bd650
Abstract: BD648 BD646 BD652 BD644 BD650 IC 651
Contextual Info: BD643/645/647/649/651 SILICON NPN DAELINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.
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bd643/645/647/649/651o-220bd644bd646+5bd648bd650bd652transistor bd650ic 651
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BD675-BD677-BD679-BD681
Abstract: BD676-BD678-BD680-BD682 bd679 PNP transistor BD679 BD675 BD677 transistor transistor BD677 transistor BD681 BD677 BD681
Contextual Info: NPN BD675-BD677-BD679-BD681 PNP BD676-BD678-BD680-BD682 SILICON DARLINGTON POWER TRANSISTORS The BD675-BD677-BD679-BD681 are NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package.
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bd675-bd677-bd679-bd681bd676-bd678-bd680-bd682o-126bd675+7bd677bd679bd681bd679 pnp transistorbd677 transistortransistor bd677transistor bd681
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2N3792
Abstract: 2N3715 PNP 2N3791 2N3716 2N3713 2N3714 2N3789 2N3790 2N3791
Contextual Info: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP
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2n3713/2n3714/2n3715/2n37162n3789/2n3790/2n3791/2n37922n37132n3714+72n37152n37162n37892n37902n37912n3792pnp 2n3791
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2N3716
Abstract: 2N3714 2N3715 2N3713 2n3792 PNP 2N3791 2N3789 2N3790 2N3791 NPN transistor 2n3713
Contextual Info: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP
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2n3713/2n3714/2n3715/2n37162n3789/2n3790/2n3791/2n37922n37132n3714+82n37152n37162n37892n37902n37912n3792pnp 2n3791npn transistor 2n3713
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BDV65
Abstract: BDV65B transistors BDV65c BDV64A BDV65A BDV65C
Contextual Info: BDV65A, B, C NPN SILICON DARLINGTONS POWER TRANSISTORS The BDV65 is epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. The complementary is BDV64A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS
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bdv65abdv65bdv64abdv65b+2bdv65ctransistors bdv65c
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BU2508AF
Abstract: bu2508af equivalent TRANSISTOR BU2508AF
Contextual Info: NPN BU2508AF NPN SILICON POWER TRANSISTORS The BU2508AF is silicon power transistor mounted in Jedec TO-3PF plastic package. They are designed for use in horizontal deflection circuits of color TV receivers. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol
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bu2508afo-218bu2508af equivalenttransistor bu2508af |
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BDX63
Abstract: BDX63A BDX63B BDX63C
Contextual Info: BDX 63, A, B, C NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V
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181T2
Abstract: 182T2 180T2 BDY24 BDY23 BDY25 181T2 B
Contextual Info: BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage
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BDX66C
Abstract: BDX66B BDX66A BDX66 BDX66 BDX66B C22B BDX66A
Contextual Info: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage
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bdx66bdx66abdx66bbdx66c+2bdx66b bdx66a bdx66c22b
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BD142
Abstract: bd142 equivalent
Contextual Info: BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts.
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bd142bd142 equivalent |
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BD142
Abstract: Comset Semiconductors
Contextual Info: BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts.
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BDX66C
Abstract: BDX66B BDX66A BDX66 BDX66B BDX66 BDX66A BDX 66 A
Contextual Info: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCEO Collector-Emitter Voltage -VCBO Collector-Base Voltage -VEBO Emitter-Base Voltage
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bdx66bdx66abdx66bbdx66c+2bdx66b bdx66a bdx66bdx 66 a
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