COMPOUND SEMICONDUCTORS Search Results

m2 m2.5 m3 bolt tensile

Abstract: torque for SELF TAPPING SCREW Crystal washer heatsink TO126 TO126 transistor torque of screw for pcb SOT-82
Contextual Info: Philips Semiconductors Mounting instructions TO126; SOT82 GENERAL DATA AND INSTRUCTIONS Heatsink compound General rules The thermal resistance from mounting base to heatsink Rth mb-h can be reduced by applying a metallic oxide compound between the contact surfaces. Values given

transistor marking N1

Abstract: RT1N141 RT3N11M
Contextual Info: RT3N11M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING RT3N11M is compound transistor built with two Unit：mm RT1N141 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

MPX5050 application note

Abstract: MPX5000 series pressure sensors
Contextual Info: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Compound Coefficient Pressure Sensor PSPICE Models AN1660 Prepared by: Warren Schultz PSPICE models for Uncompensated, MPX2000 series, and MPX5000 series pressure sensors are presented here. These models use compound coefficients to improve modeling of

RT3N22M

Abstract: RT1N241 RT1N* MARKING
Contextual Info: RT3N22M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3N22M is compound transistor built with two RT1N241 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

2SC3052

Abstract: RT3CLLM
Contextual Info: PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3CLLM is a compound transistor built with two Unit：mm 2.1 2SC3052 chips in SC-88 package. 2.0 Each transistor elements are independent.

RT2N03M

Contextual Info: RT2N03M COMPOUND TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N03M is a compound transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ , R2=10KΩ

RT2N03M

Abstract: rt2n03
Contextual Info: RT2N03M COMPOUND TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N03M is a compound transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ , R2=10KΩ

RT1N241

Abstract: RT3N22M
Contextual Info: RT3N22M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3N22M is a compound transistor built with two 2.1 RT1N241 in SC-88 package. 2.0 Each transistor elements are independent. Mini package for easy mounting

5401 DM smd transistor

Abstract: 5401 DM 5401 DM transistor High Speed CAN Transceiver IC Philips Siliconix Handbook ISP1123 ISP1123BD ISP1123D ISP1123NB LQFP32
Contextual Info: ISP1123 Universal Serial Bus compound hub Rev. 01 — 5 October 1999 Preliminary specification 1. General description The ISP1123 is a compound Universal Serial Bus USB hub device which complies with USB Specification Rev. 1.1. It integrates a Serial Interface Engine (SIE), hub

Contextual Info: Silicone Heat Transfer Compound Page 1 of 1 Silicone Heat Transfer Compound 860 z High thermal conductivity High dielectric constant High dissipation factor Use with heat sinks or metal chassis Will not dry or harden z Contains zincs oxides and polydimenthyl siloxane

5401 DM smd transistor

Abstract: 5401 DM LQFP32 SDIP32 SO32 ISP1123 ISP1123BD ISP1123D ISP1123NB 07387
Contextual Info: ISP1123 Universal Serial Bus compound hub Rev. 02 — 8 August 2000 Product specification 1. General description The ISP1123 is a compound Universal Serial Bus USB hub device which complies with USB Specification Rev. 1.1. It integrates a Serial Interface Engine (SIE), hub

GBU1008

Abstract: DF005S Diodes KBJ6005G
Contextual Info: DCS/PCN-1152 REV02 PRODUCT CHANGE NOTICE Initial Final Contact Date: Implementation Date: Alert Category: Alert Type: October 22, 2009 January 20, 2010 Discrete Semiconductors Additional Manufacturing Location / Mold Compound Change PCN #: PCN #: 1152 REV02*

Filtronic

Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15

Physics and Technology

Abstract: physics pn junction diode structure
Contextual Info: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors

shinetsu G746 rohs

Abstract: shinetsu G746 G746 rohs G746 shinetsu G746 H11S H46S AN-GEN-042-B shinetsu Dented
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-042-B for RoHS compliance products Date : 14th Dec. 2007 Prepared : Y.Tanaka Confirmed : T.Okawa SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING METHOD for RA series RoHS COMPLIANCE PRODUCTS

shinetsu G746

Abstract: shinetsu G746 shinetsu G746
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-001-B Date : 23th Dec. 1998 Rev.date : Prepared :K.Kajiwara 22th.Jun. 2010 Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Characteristics for Thermal Silicon Compound

H11S

Abstract: G746 shinetsu H46S G746 shinetsu G746 g-746 shinetsu G746 rohs
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-042-C Date : 14th Dec. 2007 Rev.date : 7th Jan. 2010 Prepared : Y.Tanaka Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING

S288P

Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
Contextual Info: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of

Crack Formation in Interconnect Metallization

Contextual Info: EXTRA SESSION LATE NEWS April 23, 2012 Boston, Massachusetts Sponsored by JEDEC JC-14.7 Committee on GaAs Reliability and Quality Standards Page 149 This page left blank intentionally. Page 150 > Abstract for Submission to 2012 Reliability of Compound Semiconductors Workshop <

shinetsu G746

Abstract: G746 shinetsu shinetsu G746 rohs G746 shinetsu ANGEN001 G746 rohs thermal conductivity shin-etsu shin-etsu Chemical
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-001 Date : 23th Dec. 1998 Prepared :K.Kajiwara Confirmed :T.Ohkawa SUBJECT: Characteristics for Thermal Silicon Compound "ShinEtsu G746". INTRODUCTION: When the RF module is mounted onto a heat sink of a equipment, thermal

BAS581-02V

Contextual Info: BAS581-02V VISHAY Vishay Semiconductors Schottky Diode in SOD-523 Features • These diodes feature very low turn-on voltage and fast switching. • Space saving SOD-523 package 1 1 2 Mechanical Data Case:SOD-523 Plastic Package Molding Compound Flammability Rating:

"RCMM" protocol

Abstract: RCMM Philips ir receiver philips ir receiver transistor H11A 3.3v philips ir demodulator usb transmitter schematic diagram TSOP RECEIVER philips ir receiver IR receiver
Contextual Info: Philips Semiconductors 1 Oct 98 Implementing a USB-to-Infrared Philips RCMM Dongle - USB IR HID Device (OVU1000, Reference Design Ver 1.1) - USB Compound Hub with IR HID Device Author: Wim, Lemay Edited by: Wei Leong, Chui Interconnectivity 1 Oct 98 Page 3

shinetsu G746

Abstract: shinetsu G746 rohs G746 shinetsu G746 H11S G746 rohs
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-042-D Date : 14th Dec. 2007 Rev. date : 22th Jun. 2010 Rev.date : 7th Jan. 2010 Prepared : Y.Tanaka Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING

"RCMM" protocol

Abstract: philips RC-MM xtal 24mhz RCMM Philips TSIP5201 ir transmitter H11A 3.3v xtal 12MHz RC5 Infrared protocol philips PDIUSBD11
Contextual Info: Philips Semiconductors 1 Oct 98 AN10012-01 previous filename: USB-IR_DONGLE.pdf Implementing a USB-to-Infrared (Philips RCMM) Dongle - USB IR HID Device (OVU1000, Reference Design Ver 1.1) - USB Compound Hub with IR HID Device Author: Wim, Lemay Edited by: Wei Leong, Chui