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    COMPOUND SEMICONDUCTORS Search Results

    COMPOUND SEMICONDUCTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM9513ADIB
    		Rochester Electronics LLC AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    CA3140AT/B
    		Rochester Electronics LLC CA3140 - Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS PDF Buy
    CA3140T
    		Rochester Electronics LLC CA3140 - Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS, MBCY8 PDF Buy
    CA3140AT
    		Rochester Electronics LLC CA3140 - Operational Amplifier, 1 Func, 5000uV Offset-Max, BIMOS, MBCY8 PDF Buy

    COMPOUND SEMICONDUCTORS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC3052

    Abstract: RT3CLLM
    Contextual Info: PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3CLLM is a compound transistor built with two Unit：mm 2.1 2SC3052 chips in SC-88 package. 2.0 Each transistor elements are independent.


    Original     		2SC3052 SC-88 JEITASC-88 RT3CLLM PDF

    RT2N03M

    Contextual Info: RT2N03M COMPOUND TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N03M is a compound transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ , R2=10KΩ


    Original     		RT2N03M RT2N03M SC-88A PDF

    RT1N241

    Abstract: RT3N22M
    Contextual Info: RT3N22M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3N22M is a compound transistor built with two 2.1 RT1N241 in SC-88 package. 2.0 Each transistor elements are independent. Mini package for easy mounting


    Original     		RT3N22M RT3N22M RT1N241 SC-88 JEITASC-88 PDF

    5401 DM smd transistor

    Abstract: 5401 DM 5401 DM transistor High Speed CAN Transceiver IC Philips Siliconix Handbook ISP1123 ISP1123BD ISP1123D ISP1123NB LQFP32
    Contextual Info: ISP1123 Universal Serial Bus compound hub Rev. 01 — 5 October 1999 Preliminary specification 1. General description The ISP1123 is a compound Universal Serial Bus USB hub device which complies with USB Specification Rev. 1.1. It integrates a Serial Interface Engine (SIE), hub


    Original     		ISP1123 ISP1123 5401 DM smd transistor 5401 DM 5401 DM transistor High Speed CAN Transceiver IC Philips Siliconix Handbook ISP1123BD ISP1123D ISP1123NB LQFP32 PDF

    5401 DM smd transistor

    Abstract: 5401 DM LQFP32 SDIP32 SO32 ISP1123 ISP1123BD ISP1123D ISP1123NB 07387
    Contextual Info: ISP1123 Universal Serial Bus compound hub Rev. 02 — 8 August 2000 Product specification 1. General description The ISP1123 is a compound Universal Serial Bus USB hub device which complies with USB Specification Rev. 1.1. It integrates a Serial Interface Engine (SIE), hub


    Original     		ISP1123 ISP1123 5401 DM smd transistor 5401 DM LQFP32 SDIP32 SO32 ISP1123BD ISP1123D ISP1123NB 07387 PDF

    GBU1008

    Abstract: DF005S Diodes KBJ6005G
    Contextual Info: DCS/PCN-1152 REV02 PRODUCT CHANGE NOTICE Initial Final Contact Date: Implementation Date: Alert Category: Alert Type: October 22, 2009 January 20, 2010 Discrete Semiconductors Additional Manufacturing Location / Mold Compound Change PCN #: PCN #: 1152 REV02*


    Original     		DCS/PCN-1152 REV02 REV02* F1504M DF08S GBJ1504-F GBU404 KBJ604G KBP204G DF1506M GBU1008 DF005S Diodes KBJ6005G PDF

    Filtronic

    Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
    Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15


    Original     		FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B Filtronic EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500 PDF

    Physics and Technology

    Abstract: physics pn junction diode structure
    Contextual Info: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors


    Original     		06-Oct-14 Physics and Technology physics pn junction diode structure PDF

    shinetsu G746

    Abstract: G746 shinetsu G746 shinetsu G-746 shin-etsu shin-etsu Chemical G746 rohs
    Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-001-A Date : 23th Dec. 1998 Rev.date : Prepared :K.Kajiwara 7thJan. 2010 Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Characteristics for Thermal Silicon Compound


    Original     		AN-GEN-001-A 25deg 6x10E-3 2x10E14 150deg shinetsu G746 G746 shinetsu G746 shinetsu G-746 shin-etsu shin-etsu Chemical G746 rohs PDF

    shinetsu G746

    Abstract: shinetsu G746 shinetsu G746
    Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-001-B Date : 23th Dec. 1998 Rev.date : Prepared :K.Kajiwara 22th.Jun. 2010 Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Characteristics for Thermal Silicon Compound


    Original     		AN-GEN-001-B 25deg 6x10E-3 2x10E14 150deg shinetsu G746 shinetsu G746 shinetsu G746 PDF

    H11S

    Abstract: G746 shinetsu H46S G746 shinetsu G746 g-746 shinetsu G746 rohs
    Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-042-C Date : 14th Dec. 2007 Rev.date : 7th Jan. 2010 Prepared : Y.Tanaka Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING


    Original     		AN-GEN-042-C H11S G746 shinetsu H46S G746 shinetsu G746 g-746 shinetsu G746 rohs PDF

    S288P

    Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
    Contextual Info: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of


    OCR Scan     		PDF

    Crack Formation in Interconnect Metallization

    Contextual Info: EXTRA SESSION LATE NEWS April 23, 2012 Boston, Massachusetts Sponsored by JEDEC JC-14.7 Committee on GaAs Reliability and Quality Standards Page 149 This page left blank intentionally. Page 150 > Abstract for Submission to 2012 Reliability of Compound Semiconductors Workshop <


    Original     		JC-14 Crack Formation in Interconnect Metallization PDF

    shinetsu G746

    Abstract: G746 shinetsu shinetsu G746 rohs G746 shinetsu ANGEN001 G746 rohs thermal conductivity shin-etsu shin-etsu Chemical
    Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-001 Date : 23th Dec. 1998 Prepared :K.Kajiwara Confirmed :T.Ohkawa SUBJECT: Characteristics for Thermal Silicon Compound "ShinEtsu G746". INTRODUCTION: When the RF module is mounted onto a heat sink of a equipment, thermal


    Original     		AN-GEN-001 25deg 6x10E-3 2x10E14 150deg shinetsu G746 G746 shinetsu shinetsu G746 rohs G746 shinetsu ANGEN001 G746 rohs thermal conductivity shin-etsu shin-etsu Chemical PDF

    "RCMM" protocol

    Abstract: RCMM Philips ir receiver philips ir receiver transistor H11A 3.3v philips ir demodulator usb transmitter schematic diagram TSOP RECEIVER philips ir receiver IR receiver
    Contextual Info: Philips Semiconductors 1 Oct 98 Implementing a USB-to-Infrared Philips RCMM Dongle - USB IR HID Device (OVU1000, Reference Design Ver 1.1) - USB Compound Hub with IR HID Device Author: Wim, Lemay Edited by: Wei Leong, Chui Interconnectivity 1 Oct 98 Page 3


    Original     		OVU1000, OVU1000 PDIUSBH11) PDIUSBD11) "RCMM" protocol RCMM Philips ir receiver philips ir receiver transistor H11A 3.3v philips ir demodulator usb transmitter schematic diagram TSOP RECEIVER philips ir receiver IR receiver PDF

    shinetsu G746

    Abstract: shinetsu G746 rohs G746 shinetsu G746 H11S G746 rohs
    Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-042-D Date : 14th Dec. 2007 Rev. date : 22th Jun. 2010 Rev.date : 7th Jan. 2010 Prepared : Y.Tanaka Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING


    Original     		AN-GEN-042-D shinetsu G746 shinetsu G746 rohs G746 shinetsu G746 H11S G746 rohs PDF

    "RCMM" protocol

    Abstract: philips RC-MM xtal 24mhz RCMM Philips TSIP5201 ir transmitter H11A 3.3v xtal 12MHz RC5 Infrared protocol philips PDIUSBD11
    Contextual Info: Philips Semiconductors 1 Oct 98 AN10012-01 previous filename: USB-IR_DONGLE.pdf Implementing a USB-to-Infrared (Philips RCMM) Dongle - USB IR HID Device (OVU1000, Reference Design Ver 1.1) - USB Compound Hub with IR HID Device Author: Wim, Lemay Edited by: Wei Leong, Chui


    Original     		AN10012-01 OVU1000, OVU1000 "RCMM" protocol philips RC-MM xtal 24mhz RCMM Philips TSIP5201 ir transmitter H11A 3.3v xtal 12MHz RC5 Infrared protocol philips PDIUSBD11 PDF

    BAS581-02V-GS08

    Contextual Info: BAS581-02V VISHAY Vishay Semiconductors Schottky Diode in SOD-523 Features • These diodes feature very low turn-on voltage and fast switching. • Space saving SOD-523 package 1 1 2 Mechanical Data Case:SOD-523 Plastic Package Molding Compound Flammability Rating:


    Original     		BAS581-02V OD-523 OD-523 BAS581-02V BAS581-02V-GS08 D-74025 02-Dec-03 PDF

    photodiode ge

    Abstract: TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation
    Contextual Info: Physics and Technology Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors consist of two or more different elements of group three (e.g.,


    Original     		26-Aug-08 photodiode ge TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation PDF

    "RCMM" protocol

    Abstract: xtal 12MHz ir receiver transistor H11A 3.3v diagram receiver and transmitter for microcontroller RC5 Infrared transmitter philips usb gamepad controller ir receiver 36khz P80C652 Force Sensitive Resistor
    Contextual Info: Philips Semiconductors 1 Oct 98 AN10011-01 previous filename: USB-IR DONGLE.pdf Implementing a USB-to-Infrared (Philips RCMM) Dongle - USB IR HID Device (OVU1000, Reference Design Ver 1.1) - USB Compound Hub with IR HID Device Author: Wim, Lemay Edited by: Wei Leong, Chui


    Original     		AN10011-01 OVU1000, OVU1000 "RCMM" protocol xtal 12MHz ir receiver transistor H11A 3.3v diagram receiver and transmitter for microcontroller RC5 Infrared transmitter philips usb gamepad controller ir receiver 36khz P80C652 Force Sensitive Resistor PDF

    MPX2000 Series

    Abstract: mpx5000 sensor specific amplifier MPX2200 asb200 MPX5000 series pressure sensors AN1660 design the instrumentation amplifier with bridge type transducer MPX2000 MPX2010 mpx2050
    Contextual Info: MOTOROLA Order this document by AN1660/D SEMICONDUCTOR APPLICATION NOTE AN1660 Compound Coefficient Pressure Sensor PSPICE Models Prepared by: Warren Schultz PSPICE models for Uncompensated, MPX2000 series, and MPX5000 series pressure sensors are presented here. These


    Original     		AN1660/D AN1660 MPX2000 MPX5000 ASB200 MPX2000 Series sensor specific amplifier MPX2200 asb200 MPX5000 series pressure sensors AN1660 design the instrumentation amplifier with bridge type transducer MPX2010 mpx2050 PDF

    Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity

    Abstract: varactor
    Contextual Info: Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity Cong Huang1, Koen Buisman1, Peter J. Zampardi2, Lis K. Nanver1, Lawrence E. Larson3 and Leo C. N. de Vreede1 1 Delft Institute of Microsystems and Nanoelectronics DIMES , Delft University of Technology,


    Original     		889-A1, 17th-20th, Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity varactor PDF

    Part Marking Information

    Contextual Info: Part Marking Information www.vishay.com Vishay Semiconductors SMA, SMB, SMC Cathode band SA XY M Type code Date code Halogen-free compound mark Type Code Date Code S X A Voltage Schottky standard: C = 15 V E = 30 V F = 40 V H = 60 V J = 100 V Schottky MBR series


    Original     		04-Dec-14 Part Marking Information PDF

    IC-3330

    Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1523 P-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION


    OCR Scan     		uPA1523 //uPA1523 /iuPA1523H 10-Pinthers. IC-3330 PDF