RD100HHF1
Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
Contextual Info: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V
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30-900mhzh-cr624-eki-0612rd100hhf1+9rd70hvf1rd16hhf1rd15hvf1rd06hvf1rd16hhf1 application notesrd70hvfrd70hhf1rd01mus2rd06hhf1
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shinetsu G746
Abstract: G746 shinetsu G746 shinetsu G-746 shin-etsu shin-etsu Chemical G746 rohs
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-001-A Date : 23th Dec. 1998 Rev.date : Prepared :K.Kajiwara 7thJan. 2010 Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Characteristics for Thermal Silicon Compound
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an-gen-001-a25deg6x10e-32x10e14+9150degshinetsu g746g746shinetsug746 shinetsug-746shin-etsushin-etsu chemicalg746 rohs
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shinetsu G746
Abstract: shinetsu G746 shinetsu G746
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-001-B Date : 23th Dec. 1998 Rev.date : Prepared :K.Kajiwara 22th.Jun. 2010 Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Characteristics for Thermal Silicon Compound
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an-gen-001-b25deg6x10e-32x10e14+5150degshinetsu g746shinetsug746 shinetsug746
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shinetsu G746
Abstract: G746 shinetsu shinetsu G746 rohs G746 shinetsu ANGEN001 G746 rohs thermal conductivity shin-etsu shin-etsu Chemical
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-001 Date : 23th Dec. 1998 Prepared :K.Kajiwara Confirmed :T.Ohkawa SUBJECT: Characteristics for Thermal Silicon Compound "ShinEtsu G746". INTRODUCTION: When the RF module is mounted onto a heat sink of a equipment, thermal
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an-gen-00125deg6x10e-32x10e14+11150degshinetsu g746g746shinetsushinetsu g746 rohsg746 shinetsuangen001g746 rohsthermal conductivityshin-etsushin-etsu chemical
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